公开(公告)号：US09496864B2

公开(公告)日：2016-11-15

申请号：US14574548

申请日：2014-12-18

Applicant: General Electric Company

Inventor： Robert Gregory Wagoner ,  Todd David Greenleaf

IPC: H03K17/567 ,  H03K17/16

CPC classification number: H03K17/567 ,  H03K17/163 ,  H03K17/166 ,  H03K17/168 ,  H03K2217/0036

Abstract: A gate drive circuit for applying a voltage to a gate of a semiconductor switching device is disclosed. The gate drive circuit includes a gate drive controller that provides voltage commands for operating the semiconductor switching device, a plurality of primary gate resistors coupled between the gate drive controller and the semiconductor switching device, one or more secondary gate resistors connected in parallel with the primary gate resistors, a primary transistor connected in series with each of the primary gate resistors, and a secondary transistor connected in series with each of the secondary gate resistors. Further, one of the primary or secondary transistors receives the one or more voltage commands from the gate drive controller and provides one or more corresponding voltage levels to the semiconductor switching device via one of the primary or secondary gate resistors so as to control the on-off behavior of the semiconductor switching device.

Abstract translation: 公开了一种用于向半导体开关器件的栅极施加电压的栅极驱动电路。 栅极驱动电路包括栅极驱动控制器，其提供用于操作半导体开关器件的电压命令，耦合在栅极驱动控制器和半导体开关器件之间的多个初级栅极电阻器，与主要器件并联连接的一个或多个次级栅极电阻器 栅极电阻器，与每个主栅极电阻器串联连接的主晶体管，以及与每个次级栅极电阻器串联连接的次级晶体管。 此外，主晶体管或次晶体管中的一个晶体管从栅极驱动控制器接收一个或多个电压指令，并且经由主栅极电阻器或次级栅极电阻器之一向半导体开关器件提供一个或多个相应的电压电平， 关闭半导体开关器件的行为。