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公开(公告)号:US20210216169A1
公开(公告)日:2021-07-15
申请号:US16647826
申请日:2019-09-03
发明人: Jun CHEN , Qicheng CHEN , Ming ZHANG , Jian YANG
IPC分类号: G06F3/044
摘要: The present disclosure provides a touch substrate, a manufacturing method thereof and a touch display device. The touch substrate includes: a base substrate; a touch area on the base substrate; a touch electrode made of nano-silver, the touch electrode including first touch electrodes and second touch electrodes, a first insulating layer located on a side of the touch electrode away from a center of the base substrate, a touch electrode bridge on the first insulating layer, the touch electrode bridge connecting adjacent first touch electrodes and/or adjacent second electrodes by way of a first through-hole penetrating the first insulating layer. An etching liquid applied to the touch electrode bridge is different from the etching liquid applied to the nano-silver. The technical solution of the present disclosure can realize a flexible touch substrate by using nano-silver and a photolithography process.
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公开(公告)号:US20170277303A1
公开(公告)日:2017-09-28
申请号:US15504095
申请日:2016-01-05
发明人: Qingyou CHEN , Ji LI , Jun CHEN , Cheng ZHANG
IPC分类号: G06F3/044
CPC分类号: G06F3/044 , G06F2203/04103 , G06F2203/04104 , G06F2203/04112 , H03K17/962 , H03K2217/960775
摘要: The present invention discloses an electrical property detection device and method for a touch electrode. The electrical property detection device includes a capacitor formation unit configured to form a capacitor structure with the touch electrode to be detected; and a capacitance detection unit configured to obtain a capacitance value of the capacitor structure. In the technical solutions of the present invention, the capacitor structure is formed by the capacitor formation unit and the touch electrode to be detected, and then the capacitance value of the capacitor structure is obtained by the capacitance detection unit, so that a detector can effectively and accurately evaluate the electrical property of the touch electrode based on the obtained capacitance value of the capacitor structure.
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