Inspection method and apparatus using charged particle beam
    11.
    发明申请
    Inspection method and apparatus using charged particle beam 有权
    使用带电粒子束的检查方法和装置

    公开(公告)号:US20060163480A1

    公开(公告)日:2006-07-27

    申请号:US11375070

    申请日:2006-03-15

    IPC分类号: G21K7/00

    CPC分类号: G01R31/311

    摘要: A scanning electron microscope or inspection system includes a sample stage on which a sample such as a wafer is loaded, an electro optical unit to scan an electron beam to the sample, and a charge control electrode to which voltage for controlling a charged state of the sample is applied. Further, there is provided an ultraviolet irradiation device for irradiating ultraviolet light onto the sample, a retarding electric source to apply a retarding voltage to the sample stage or the sample, and a detection unit for detecting secondary electrons or backscattering electrons generated in response to the scan of the electron beam. A monitoring unit for displaying an image of the sample or an inspection unit for inspection of the sample is provided which effects display or inspection based on signals from the detection unit.

    摘要翻译: 扫描电子显微镜或检查系统包括其上装载诸如晶片的样品的样品台,向样品扫描电子束的电光单元以及用于控制电极的充电状态的电压 样品被应用。 此外,提供了一种用于向样品照射紫外光的紫外线照射装置,向样品台或样品施加延迟电压的延迟电源,以及用于检测响应于该样品的样品产生的二次电子或反向散射电子的检测单元 扫描电子束。 提供了用于显示样本的图像的监视单元或用于检查样本的检查单元,其基于来自检测单元的信号进行显示或检查。

    Inspection method and apparatus using charged particle beam
    12.
    发明授权
    Inspection method and apparatus using charged particle beam 失效
    使用带电粒子束的检查方法和装置

    公开(公告)号:US07019294B2

    公开(公告)日:2006-03-28

    申请号:US11002124

    申请日:2004-12-03

    CPC分类号: G01R31/311

    摘要: Inspection method and apparatus using a charged particle beam for the inspection of defects on an unfinished semiconductor wafer in the manufacturing process of a semiconductor device, a uniform charge across the wafer is attained by performing ultraviolet irradiation and voltage application to a charge control electrode in a coordinated manner.

    摘要翻译: 使用带电粒子束的检查方法和装置,用于在半导体器件的制造过程中检查未完成的半导体晶片上的缺陷,跨晶片的均匀电荷通过对电荷控制电极进行紫外线照射和电压施加来实现 协调一致

    Inspection method and apparatus using charged particle beam
    14.
    发明授权
    Inspection method and apparatus using charged particle beam 有权
    使用带电粒子束的检查方法和装置

    公开(公告)号:US07276693B2

    公开(公告)日:2007-10-02

    申请号:US11375070

    申请日:2006-03-15

    CPC分类号: G01R31/311

    摘要: A scanning electron microscope or inspection system includes a sample stage on which a sample such as a wafer is loaded, an electro optical unit to scan an electron beam to the sample, and a charge control electrode to which voltage for controlling a charged state of the sample is applied. Further, there is provided an ultraviolet irradiation device for irradiating ultraviolet light onto the sample, a retarding electric source to apply a retarding voltage to the sample stage or the sample, and a detection unit for detecting secondary electrons or backscattering electrons generated in response to the scan of the electron beam. A monitoring unit for displaying an image of the sample or an inspection unit for inspection of the sample is provided which effects display or inspection based on signals from the detection unit.

    摘要翻译: 扫描电子显微镜或检查系统包括其上装载诸如晶片的样品的样品台,向样品扫描电子束的电光单元以及用于控制电极的充电状态的电压 样品被应用。 此外,提供了一种用于向样品照射紫外光的紫外线照射装置,向样品台或样品施加延迟电压的延迟电源,以及用于检测响应于该样品的样品产生的二次电子或反向散射电子的检测单元 扫描电子束。 提供了用于显示样本的图像的监视单元或用于检查样本的检查单元,其基于来自检测单元的信号进行显示或检查。