公开(公告)号：US20140295583A1

公开(公告)日：2014-10-02

申请号：US14014557

申请日：2013-08-30

Applicant: Hitachi-High-Technologies Corporation

Inventor： Shigeru NAKAMOTO ,  Tatehito USUI ,  Satomi INOUE ,  Kousa HIROTA ,  Kousuke FUKUCHI

IPC: H01L21/66

CPC classification number: H01L22/12 ,  G01B11/0616 ,  G01B11/0683 ,  H01J37/32963 ,  H01J37/32972 ,  H01L22/26 ,  H01L2924/0002 ,  H01L2924/00

Abstract: In a plasma processing method and apparatus for processing a film to be processed contained in a film structure preliminarily formed on an upper surface of a wafer mounted in a processing chamber, by using plasma, a residual film thickness at an arbitrary time is calculated using a result of comparing detective differential waveform pattern data with actual differential waveform pattern data. The detective differential waveform pattern data is produced by using two basic differential waveform pattern data which respectively use, as parameters, residual thicknesses of the films to be processed in film structures having underlying films with different thicknesses and the wavelengths of the interference light. The detective waveform pattern data being preliminarily prepared prior to processing of the wafer. Determination is made as to whether or not an object of the processing has been reached by using the residual film thickness.

Abstract translation: 在通过使用等离子体预先形成在安装在处理室中的晶片的上表面上预先形成的膜结构中的处理被处理膜的等离子体处理方法和装置中，任意时间的残留膜厚度使用 比较检测差分波形模式数据与实际差分波形模式数据的结果。 通过使用分别使用具有不同厚度的底膜和干涉光的膜的膜结构中要处理的膜的残留厚度作为参数的两个基本差分波形图案数据来产生检测差分波形图案数据。 在处理晶片之前预先准备的检测波形图案数据。 通过使用剩余膜厚来确定是否达到了加工对象。