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公开(公告)号：US4999280A
公开(公告)日：1991-03-12
申请号：US324849
申请日：1989-03-17
申请人： Hiroyuki Hiraoka
发明人： Hiroyuki Hiraoka
IPC分类号： G03F7/11 , G03F7/38 , G03F7/40 , H01L21/027
CPC分类号： G03F7/405
摘要： Photoresist images are made resistant to reactive ion etching by treating them with a poly(dimethylsilazane).
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公开(公告)号：US4875124A
公开(公告)日：1989-10-17
申请号：US182535
申请日：1988-04-18
CPC分类号： G11B5/31
摘要： A thin film magnetic head is provided in which the electrical insulation surrounding the conductive coil comprises a photosensitive resin which has been crosslinked by a thermally activated crosslinking agent or promotor. The addition of the thermally activated crosslinking agent or promotor greatly reduces both the cure temperature and cure time and results in enhanced dimensional stability without any deleterious effects.
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13.发明授权Process for enhancing the resistance of a resist image to reactive ion etching and to thermal flow 失效用于增强抗蚀剂图像对反应离子蚀刻和热流的电阻的方法
公开(公告)号：US4690838A
公开(公告)日：1987-09-01
申请号：US899589
申请日：1986-08-25
IPC分类号： H01L21/302 , G03F7/40 , H01L21/027 , H01L21/3065 , G03C5/00 , B05D3/04
CPC分类号： G03F7/405
摘要： The reactive ion etching and thermal flow resistance of a resist image is enhanced by contacting the resist image with an alkyl metal compound of magnesium or aluminum.
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公开(公告)号：US4464460A
公开(公告)日：1984-08-07
申请号：US508644
申请日：1983-06-28
申请人： Hiroyuki Hiraoka , Donald C. Hofer , Robert D. Miller , Lester A. Pederson , Carlton G. Willson
发明人： Hiroyuki Hiraoka , Donald C. Hofer , Robert D. Miller , Lester A. Pederson , Carlton G. Willson
IPC分类号： G03C5/00 , G03F7/075 , G03F7/09 , G03F7/26 , H01L21/027
CPC分类号： G03F7/094 , G03F7/0754
摘要： A process for making an image oxygen-reactive ion etch barrier using a polysilane that is resistant to resistive ion etching and is also a positive acting resist.
摘要翻译： 使用耐电阻离子蚀刻的聚硅烷制造图像氧反应离子蚀刻阻挡层的方法，也是正性抗蚀剂。
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公开(公告)号：US5684065A
公开(公告)日：1997-11-04
申请号：US750865
申请日：1996-12-19
申请人： Hiroyuki Hiraoka , Shinji Tamaru , Osamu Tanaka
发明人： Hiroyuki Hiraoka , Shinji Tamaru , Osamu Tanaka
CPC分类号： C08J7/12 , B29C59/16 , B29C2035/0827 , B29C2035/0838 , B29K2027/12 , C08J2327/12
摘要： To provide a fluorine-containing resin molded article surface-modified by irradiating, onto a surface thereof, a laser beam having a wavelength of 150 to 370 nm through a basic solution, preferably an aqueous basic solution. The surface-modified fluorine-containing resin molded article is excellent in adhesion to not only organic materials but also metals.
摘要翻译： PCT No.PCT / JP95 / 01276 Sec。 371 1996年12月19日第 102（e）日期1996年12月19日PCT提交1995年6月26日PCT公布。 出版物WO96 / 01287 日本特开1996年1月18日为了提供通过碱性溶液，优选碱性水溶液将其波长为150〜370nm的激光束照射到表面上而进行表面改性的含氟树脂成型体。 表面改性含氟树脂成型体对于不仅有机材料而且金属的粘合性也优异。
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公开(公告)号：US4770974A
公开(公告)日：1988-09-13
申请号：US78321
申请日：1987-07-27
申请人： Hiroyuki Hiraoka
发明人： Hiroyuki Hiraoka
CPC分类号： G03F7/0757 , Y10S430/106
摘要： A resist composition is made resistant to reactive ion etching by admixing therewith a poly(dialkylsilazane).
摘要翻译： 抗蚀剂组合物通过与聚（二烷基硅氮烷）混合而制成抗反应离子蚀刻。
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公开(公告)号：US4460436A
公开(公告)日：1984-07-17
申请号：US529458
申请日：1983-09-06
申请人： Hiroyuki Hiraoka
发明人： Hiroyuki Hiraoka
IPC分类号： H01L21/027 , G03F7/075 , G03F7/16 , G03F7/20 , H01L21/312 , B44C1/22 , C03C15/00 , C03C25/06 , B29C17/08
CPC分类号： G03F7/167 , G03F7/0755 , H01L21/312 , H01L21/3121
摘要： A patterned polymer film is deposited on a substrate by pattern-wise exposing a monomer vapor to a beam of ions and dry developing by etching with oxygen plasma.
摘要翻译： 图案化的聚合物膜通过将单体蒸气图案化地暴露于离子束并通过用氧等离子体蚀刻而干燥显影而沉积在基板上。
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18.发明授权Process for forming photoresists with strong resistance to reactive ion etching and high sensitivity to mid- and deep UV-light 失效用于形成对反应离子蚀刻具有很强抗性并对中等深度和深紫外光具有高灵敏度的光致抗蚀剂的工艺
公开(公告)号：US4389482A
公开(公告)日：1983-06-21
申请号：US330103
申请日：1981-12-14
CPC分类号： G03F7/40
摘要： A photoresist that has strong resistance to reactive ion etching, high photosensitivity to mid- and deep UV-light, and high resolution capability is formed by using as the resist material a copolymer of methacrylonitrile and methacrylic acid, and by baking the resist before the exposure to light for improved photosensitivity, and after exposure to light, development, and prior to treatment with reactive ion etching.
摘要翻译： 通过使用甲基丙烯腈和甲基丙烯酸的共聚物作为抗蚀剂材料，通过在曝光前烘烤抗蚀剂，形成对反应离子蚀刻具有很强抗性，对中等深度和深度UV光的高光敏性和高分辨能力的光致抗蚀剂 以改善光敏性，并且在暴露于光，显影之后和在用反应离子蚀刻处理之前。
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公开(公告)号：US4119688A
公开(公告)日：1978-10-10
申请号：US807601
申请日：1977-06-17
申请人： Hiroyuki Hiraoka
发明人： Hiroyuki Hiraoka
IPC分类号： G03G13/26 , G03F7/20 , G03G5/00 , G03G13/28 , H01J37/317 , H01L21/027 , H01J37/31
CPC分类号： H01J37/3175 , B82Y10/00 , B82Y40/00 , G03F1/20 , G03F1/50 , G03F7/2059 , H01L21/0277 , H01J2237/31781 , Y10T29/49156
摘要： An electro-lithography method suitable for forming a high resolution pattern in an electron sensitive resist material is disclosed. This technology permits the inexpensive high resolution reproduction of masks for use in integrated circuits and magnetic bubbles. The method involves the application of a pulsed, electric field to two parallel electrodes having an electron beam resist layer positioned on one of the electrodes and a mask positioned between the second electrode and the resist layer. The mask forms a gap having a thickness of 10.sup.-4 m to 10.sup.-5 m with the resist layer.
摘要翻译： 公开了一种适用于在电子敏感抗蚀剂材料中形成高分辨率图案的电光刻方法。 该技术允许用于集成电路和磁气泡的掩模的廉价的高分辨率再现。 该方法涉及将脉冲电场施加到具有位于电极之一上的电子束抗蚀剂层和位于第二电极和抗蚀剂层之间的掩模的两个平行电极。 掩模与抗蚀剂层形成厚度为10-4μm至10-5μm的间隙。
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公开(公告)号：US3964908A
公开(公告)日：1976-06-22
申请号：US615652
申请日：1975-09-22
CPC分类号： G03F7/039 , C08F8/32 , Y10S430/143
摘要： A process for forming an image with a positive resist using a polymer containing dimethylglutarimide units. The polymer is sensitive to both electron beam and light radiation, has a high glass transition temperature, a high temperature resistance, and is capable of very fine spatial resolution, very suitable for micro circuitry processings.
摘要翻译： 使用含有二甲基戊二酰亚胺单元的聚合物形成具有正性抗蚀剂的图像的方法。 聚合物对电子束和光辐射敏感，具有高玻璃化转变温度，耐高温性，并且能够非常精细的空间分辨率，非常适合微电路处理。
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