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公开(公告)号：US20100099342A1
公开(公告)日：2010-04-22
申请号：US12255442
申请日：2008-10-21
IPC分类号： B24D9/08
CPC分类号： B24B53/017
摘要： A method and apparatus for replacing a polishing pad conditioning disk is a chemical mechanical polishing system is provided. The apparatus comprises a disk load/unload station for unloading used conditioning disks from a pad conditioning assembly and loading unused conditioning disks onto the pad conditioning assembly, on or more disk storage stations for storing both used and unused conditioning disks, and a central robot having a range of motion sufficient for transferring both used an unused conditioning disks between the disk load/unload station and the one or more disk storage stations. Embodiments described herein reduce the length of system interruption by eliminating the need to safety lock out the system for the replacement of polishing pad conditioning disks.
摘要翻译： 一种用于更换抛光垫调节盘的方法和装置是提供化学机械抛光系统。 该装置包括用于从衬垫调节组件卸载使用的调节盘并将未使用的调节盘装载到衬垫调节组件上的多个盘装载/卸载站，用于存储使用和未使用的调节盘的两个或多个盘存储站，以及一个中央机器人， 足够的运动范围，用于在盘装载/卸载站和一个或多个盘存储站之间使用未使用的调节盘。 本文所描述的实施例通过消除安全锁定系统来更换抛光垫调节盘来减少系统中断的长度。
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公开(公告)号：US20090036036A1
公开(公告)日：2009-02-05
申请号：US12245759
申请日：2008-10-05
IPC分类号： B24B53/02
CPC分类号： B24B53/017 , B24B53/005 , B24B53/12
摘要： Apparatus and methods for conditioning a polishing pad are provided. An apparatus includes a base, an arm adapted to support a conditioning disk; and a drive mechanism coupled between the arm and the conditioning disk, wherein the drive mechanism is adapted to directly rotate the conditioning disk relative to the arm. Numerous other aspects are disclosed.
摘要翻译： 提供了用于调节抛光垫的装置和方法。 一种装置包括底座，适于支撑调节盘的臂; 以及联接在所述臂和所述调节盘之间的驱动机构，其中所述驱动机构适于相对于所述臂直接旋转所述调节盘。 公开了许多其他方面。
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公开(公告)号：US20120234229A1
公开(公告)日：2012-09-20
申请号：US13419247
申请日：2012-03-13
CPC分类号： C30B25/12 , C23C16/4583
摘要： Substrate support assemblies and deposition chambers employing such support assemblies to improve temperature uniformity during film depositions, such as epitaxial growths of group-V material stacks for LEDs. In one embodiment, the support assembly includes a first component having a first thermal resistance and a top surface upon which the substrate is to be disposed at a first location. The support assembly further includes a second component to be disposed over the first component and cover a second location of the susceptor while the substrate is disposed over the first location and having a second thermal resistance to insulate regions of the susceptor adjacent to the substrate by an amount approximating that of the substrate during a deposition process. In embodiments, the second component is removable from the first component and supports the substrate in absence of the first component during transfer of the substrate between multiple deposition systems.
摘要翻译： 使用这种支撑组件的衬底支撑组件和沉积室改善膜沉积期间的温度均匀性，例如用于LED的V族材料堆叠的外延生长。 在一个实施例中，支撑组件包括具有第一热阻的第一部件和顶部表面，基板将被放置在第一位置。 所述支撑组件还包括第二部件，所述第二部件设置在所述第一部件上并且覆盖所述基座的第二位置，同时所述基板设置在所述第一位置上并且具有第二热阻，以使所述基座的邻近所述基板的区域绝缘 在沉积过程中的量与基底的量近似。 在实施例中，第二部件可从第一部件移除并且在多个沉积系统之间的衬底传送期间不存在第一部件时支撑衬底。
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公开(公告)号：US20120227665A1
公开(公告)日：2012-09-13
申请号：US13406058
申请日：2012-02-27
申请人： OMER OZGUN , Didier P. Florin , Donald J.K. Olgado
发明人： OMER OZGUN , Didier P. Florin , Donald J.K. Olgado
CPC分类号： C23C16/45565 , C23C16/4411 , C23C16/45572 , C23C16/4584 , C23C16/481 , C23C16/52
摘要： A system and methods for heating substrates during high temperature processing is provided. The system uses multiple temperature inputs of the backside of a substrate carrier and known parameters within the processing chamber to estimate the temperature of substrates being processed on the substrate carrier. Temperature readings of the substrate carrier taken from above the processing volume may be used to correct any drift that may occur with respect to temperature readings taken from below the substrate carrier. Temperature readings of heat exchanging fluid flowing through a showerhead assembly may be used to estimate the temperature of the surface of the showerhead, which may be used in the estimation of the temperature of the substrates being processed. The system then uses the estimated temperature to control the amount of power supplied to a plurality of heat sources configured to heat the substrates from below the substrate carrier.
摘要翻译： 提供了一种在高温处理过程中加热基板的系统和方法。 该系统使用衬底载体的背侧的多个温度输入和处理室内的已知参数来估计在衬底载体上正在处理的衬底的温度。 可以使用从处理体积以上获取的衬底载体的温度读数来校正可能发生的相对于从衬底载体下方读取的温度读数的漂移。 可以使用流过喷头组件的热交换流体的温度读数来估计喷头表面的温度，这可以用于估计待处理的基底的温度。 然后，系统使用估计的温度来控制供应给配置为从衬底载体下方加热衬底的多个热源的功率量。
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公开(公告)号：US20110129732A1
公开(公告)日：2011-06-02
申请号：US12839051
申请日：2010-07-19
IPC分类号： H01M4/70 , H01M4/485 , H01M4/52 , H01M4/58 , H01M4/505 , H01M4/38 , H01M4/583 , B05C13/00 , B05C11/00 , B05B5/025 , B05B7/16 , B05B7/20 , B05C1/08 , B05C5/00
CPC分类号： H01M4/70 , H01M4/134 , H01M4/139 , H01M4/485 , H01M4/505 , H01M4/525 , H01M4/5825 , H01M4/587 , H01M4/661
摘要： Embodiments of the invention contemplate forming an electrochemical device and device components, such as a battery cell or supercapacitor, using thin-film or layer deposition processes and other related methods for forming the same. In one embodiment, a battery bi-layer cell is provided. The battery bi-layer cell comprises an anode structure comprising a conductive collector substrate, a plurality of pockets formed on the conductive collector substrate by conductive microstructures comprising a plurality of columnar projections, and an anodically active powder deposited in and over the plurality of pockets, an insulative separator layer formed over the plurality of pockets, and a cathode structure joined over the insulative separator.
摘要翻译： 本发明的实施方案考虑使用薄膜或层沉积工艺和其它相关方法形成电化学装置和器件组件，例如电池单元或超级电容器。 在一个实施例中，提供电池双层电池。 电池双层电池包括阳极结构，其包括导电收集器基板，通过包括多个柱状突起的导电微结构形成在导电收集器基板上的多个凹穴以及沉积在多个凹穴中和之上的阳极活性粉末， 形成在所述多个凹穴上的绝缘分离层，以及连接在所述绝缘分离器上的阴极结构。
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16.发明申请公开(公告)号：US20110045170A1
公开(公告)日：2011-02-24
申请号：US12862265
申请日：2010-08-24
申请人： Quanyuan Shang , Lu Yang , Karl M. Brown , Donald J.K. Olgado , Victor Pebenito , Hooman Bolandi , Tetsuya Ishikawa , Robert Z. Bachrach , Liang-Yuh Chen
发明人： Quanyuan Shang , Lu Yang , Karl M. Brown , Donald J.K. Olgado , Victor Pebenito , Hooman Bolandi , Tetsuya Ishikawa , Robert Z. Bachrach , Liang-Yuh Chen
CPC分类号： H01M4/0419 , H01M4/1391
摘要： A method and apparatus for forming an electrochemical layer of a thin film battery is provided. A precursor mixture comprising electrochemically active precursor particles dispersed in a carrying medium is provided to a processing chamber and thermally treated using a combustible gas mixture also provided to the chamber. The precursor is converted to nanocrystals by the thermal energy, and the nanocrystals are deposited on a substrate. A second precursor may be blended with the nanocrystals as they deposit on the surface to enhance adhesion and conductivity.
摘要翻译： 提供一种用于形成薄膜电池的电化学层的方法和装置。 将包含分散在载运介质中的电化学活性前体颗粒的前体混合物提供到处理室，并使用也提供给室的可燃气体混合物进行热处理。 通过热能将前体转化成纳米晶体，并将纳米晶体沉积在基底上。 当第二前体沉积在表面上以增强粘附性和导电性时，可与纳米晶体共混。
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公开(公告)号：US20100314244A1
公开(公告)日：2010-12-16
申请号：US12560798
申请日：2009-09-16
申请人： Karl Brown , Alan Ritchie , John A. Pipitone , Daniel J. Hoffman , Ying Rui , Donald J.K. Olgado
发明人： Karl Brown , Alan Ritchie , John A. Pipitone , Daniel J. Hoffman , Ying Rui , Donald J.K. Olgado
IPC分类号： C23C14/46
CPC分类号： C23C14/354 , C23C14/3471 , H01J37/32091 , H01J37/32165 , H01J37/3244 , H01J37/32449
摘要： Methods of processing a substrate in a PVD chamber comprising a target, a substrate and a process gas at a pressure sufficient to cause ionization of a substantial portion of species sputtered from the target are described. A capacitively coupled high density plasma is maintained by applying very high frequency power to the target. Sputtered material is ionized in the plasma and accelerated toward the substrate by a high frequency bias power applied to the substrate. The microstructure of the resultant film is controlled by modifying one or more of the pressure and the high frequency bias power.
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公开(公告)号：US20070212983A1
公开(公告)日：2007-09-13
申请号：US11684969
申请日：2007-03-12
CPC分类号： B24B53/017 , B24B53/005 , B24B53/12
摘要： Apparatus and methods for conditioning a polishing pad include a base, an arm pivotally coupled to the base and adapted to support a conditioning disk, and an actuator coupled to the base and the arm. The actuator is adapted to cause the arm to press the conditioning disk against the polishing pad with a linearly variable amount of force. A first force is produced with the actuator. The first force is scaled by a linearly variable amount to a second force that is applied to the polishing pad by a conditioning disk. Numerous other aspects are disclosed.
摘要翻译： 用于调理抛光垫的装置和方法包括基座，枢转地联接到基座并适于支撑调节盘的臂以及联接到基座和臂的致动器。 致动器适于使臂以线性可变量的力将调节盘压靠抛光垫。 用致动器产生第一力。 第一力通过线性可变量被缩放到通过调节盘施加到抛光垫的第二力。 公开了许多其他方面。
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公开(公告)号：US20130087093A1
公开(公告)日：2013-04-11
申请号：US13456547
申请日：2012-04-26
申请人： Donald J.K. Olgado , Yuriy Melnik , Hiroji Hanawa , Karl M. Brown , Son T. Nguyen , Kevin S. Griffin
发明人： Donald J.K. Olgado , Yuriy Melnik , Hiroji Hanawa , Karl M. Brown , Son T. Nguyen , Kevin S. Griffin
CPC分类号： C30B25/02 , C23C16/303 , C23C16/4488 , C23C16/45565 , C23C16/4557 , C23C16/45574 , C30B25/10 , C30B25/14 , C30B29/406
摘要： Embodiments of the present invention generally relate to a hydride vapor phase epitaxy (HVPE) apparatus that utilizes a high temperature gas distribution device and plasma generation to form an activated precursor gas used to rapidly form a high quality compound nitride layer on a surface of a substrate. In one embodiment, plasma is formed from a nitrogen containing precursor within a gas distribution device prior to injection into a processing region of the HVPE apparatus. In another embodiment, plasma is formed from a nitrogen containing precursor within the processing region by using the gas distribution device as an electrode for forming the plasma in the processing region. In each embodiment, a second precursor gas may be separately introduced into the processing region of the HVPE apparatus through the gas distribution device without mixing with the nitrogen containing precursor prior to entering the processing region.
摘要翻译： 本发明的实施方案一般涉及使用高温气体分配装置和等离子体产生形成活化的前体气体的氢化物气相外延（HVPE）装置，其用于在衬底的表面上快速形成高质量的复合氮化物层 。 在一个实施例中，在注入HVPE装置的处理区域之前，在气体分配装置内由含氮前体形成等离子体。 在另一个实施方案中，通过使用气体分配装置作为在处理区域中形成等离子体的电极，在处理区域内由含氮前体形成等离子体。 在每个实施例中，第二前体气体可以在进入处理区域之前通过气体分配装置分别引入到HVPE设备的处理区域中，而不与含氮前体混合。
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公开(公告)号：US20130032085A1
公开(公告)日：2013-02-07
申请号：US13456693
申请日：2012-04-26
申请人： Hiroji HANAWA , Yuriy Melnik , Donald J.K. Olgado , Karl M. Brown , Son T. Nguyen , Kevin S. Griffin
发明人： Hiroji HANAWA , Yuriy Melnik , Donald J.K. Olgado , Karl M. Brown , Son T. Nguyen , Kevin S. Griffin
CPC分类号： C23C16/303 , C23C16/4488 , C23C16/452 , C30B25/105 , C30B25/14 , C30B29/403
摘要： Embodiments of the invention disclosed herein generally relate to a hydride vapor phase epitaxy (HVPE) deposition chamber that utilizes a plasma generation apparatus to form an activated precursor gas that is used to rapidly form a high quality compound nitride layer on a surface of a substrate. In one embodiment, the plasma generation apparatus is used to create a desirable group-III metal halide precursor gas that can enhance the deposition reaction kinetics, and thus reduce the processing time and improve the film quality of a formed group-III metal nitride layer. In addition, the chamber may be equipped with a separate nitrogen containing precursor activated species generator to enhance the activity of the delivered nitrogen precursor gases.
摘要翻译： 本文公开的本发明的实施例通常涉及氢化物气相外延（HVPE）沉积室，其利用等离子体产生装置形成活化的前体气体，其用于在衬底的表面上快速形成高质量的复合氮化物层。 在一个实施例中，等离子体产生装置用于产生可以增强沉积反应动力学，从而减少处理时间并改善形成的III族金属氮化物层的膜质量的期望的III族金属卤化物前体气体。 此外，腔室可以配备有单独的含氮前体活化物质发生器，以增强所输送的氮前体气体的活性。
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