OPTICAL CHARACTERIZATION OF PHOTONIC INTEGRATED CIRCUITS
    11.
    发明申请
    OPTICAL CHARACTERIZATION OF PHOTONIC INTEGRATED CIRCUITS 有权
    光电集成电路的光学特性

    公开(公告)号:US20090245322A1

    公开(公告)日:2009-10-01

    申请号:US12115201

    申请日:2008-05-05

    CPC classification number: G01K11/125

    Abstract: In one aspect, the present invention provides techniques and apparatus for optical characterization of photonic devices and/or circuits. By way of example, the techniques can be used to identify damaged devices in photonic integrated circuits. In some embodiments, thermal imaging is employed as a diagnostic tool for characterizing the devices/circuits under investigation. For example, in one embodiment, integrated cascaded semiconductor amplifiers can be characterized using amplified spontaneous emission from one amplifier as a thermal modulation input to another amplifier. A thermoreflectance image of the second amplifier can reveal flaws, if present. Further, in some embodiments, thermal imaging in conjunction with a total energy model can be employed to characterize the elements of photonic circuits optically and/or to map the optical power distribution throughout the circuits.

    Abstract translation: 一方面,本发明提供了用于光子器件和/或电路的光学表征的技术和装置。 作为示例,这些技术可用于识别光子集成电路中的损坏设备。 在一些实施例中,热成像被用作诊断工具,用于表征所研究的装置/电路。 例如,在一个实施例中,可以使用来自一个放大器的放大的自发发射作为热调制输入到另一个放大器来表征集成级联半导体放大器。 第二放大器的反射反射图像可以显示缺陷(如果存在)。 此外,在一些实施例中,可以采用结合总能量模型的热成像来光学地表征光子电路的元件和/或映射整个电路中的光功率分布。

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