公开(公告)号：US20170122892A1

公开(公告)日：2017-05-04

申请号：US14961906

申请日：2015-12-08

Applicant: Industrial Technology Research Institute

Inventor： Sih-Han Li ,  Chih-Sheng Lin ,  Kuan-Wei Chen ,  Erh-Hao Chen ,  Shyh-Shyuan Sheu

IPC: G01N27/12

CPC classification number: G01N27/121 ,  G01N27/127

Abstract: A sensor device and a method of manufacturing the same are provided. The sensor device includes a substrate, a plurality of sensing electrodes, a humidity nanowire sensor, a temperature nanowire sensor, and a gas nanowire sensor. The sensing electrodes are formed on the substrate, and the humidity, the temperature and the gas nanowire sensors are also on the substrate. The humidity nanowire sensor includes an exposed first nanowire sensing region, the temperature nanowire sensor includes a second nanowire sensing region, and the gas nanowire sensor includes a third nanowire sensing region.