公开(公告)号：US07651948B2

公开(公告)日：2010-01-26

申请号：US11480134

申请日：2006-06-30

申请人： Yihwan Kim ,  Jean R. Vatus ,  Lori D. Washington ,  Arkadii Samoilov ,  Ali Zojaji

发明人： Yihwan Kim ,  Jean R. Vatus ,  Lori D. Washington ,  Arkadii Samoilov ,  Ali Zojaji

IPC分类号： H01L21/302

CPC分类号： C23C16/0236 ,  C30B25/02 ,  C30B29/52

摘要： A method for processing a substrate including a pre-cleaning etch and reduced pressure process is disclosed. The pre-cleaning process involves introducing a substrate into a processing chamber; flowing an etching gas into the processing chamber; processing at least a portion of the substrate with the etching gas to remove a contaminated or damaged layer from a substrate surface; stopping flow of the etching gas; evacuating the processing chamber to achieve a reduced pressure in the chamber; and processing the substrate surface at the reduced pressure. Epitaxial deposition is then used to form an epitaxial layer on the substrate surface.

摘要翻译： 公开了一种用于处理包括预清洗蚀刻和减压工艺的衬底的方法。 预清洗过程包括将衬底引入处理室; 使蚀刻气体流入处理室; 用蚀刻气体处理至少一部分基板以从基板表面去除污染或损坏的层; 停止蚀刻气体的流动; 排空处理室以在室中实现减压; 并在减压下处理衬底表面。 然后使用外延沉积在衬底表面上形成外延层。

公开(公告)号：US20090276097A1

公开(公告)日：2009-11-05

申请号：US12238987

申请日：2008-09-26

申请人： Kailash Kiran Patalay ,  Richard O. Collins ,  Jean R. Vatus ,  Zhepeng Cong

发明人： Kailash Kiran Patalay ,  Richard O. Collins ,  Jean R. Vatus ,  Zhepeng Cong

IPC分类号： G01M1/38 ,  B05C11/00

CPC分类号： H01L21/68 ,  C30B25/12 ,  H01L21/67259 ,  H01L21/68785 ,  H01L21/68792

摘要： A substrate processing system includes an optical measurement assembly coupled to an exterior of a processing chamber that has a portion that is transparent. The processing chamber includes a reference object and a pedestal for supporting a work piece. The optical measurement assembly measures a lateral location, a height and a tilt of the pedestal by transmitting light into the processing chamber through the transparent portion of the processing chamber and detecting a reflected light from both the reference object and the portion of the pedestal after the reflected light leaves the chamber through the transparent portion of the processing chamber. A method of adjusting a pedestal includes analyzing the reflected light and leveling the pedestal, translating the pedestal, calibrating the pedestal height to a preheat ring level, and checking the level and location of the pedestal in response to the analyzed reflected light.

摘要翻译： 衬底处理系统包括耦合到具有透明部分的处理室的外部的光学测量组件。 处理室包括用于支撑工件的参考物体和基座。 光学测量组件通过将光通过处理室的透明部分传输到处理室中来测量基座的横向位置，高度和倾斜度，并且检测来自基准物体和底座部分之后的反射光 反射光通过处理室的透明部分离开室。 调整基座的方法包括：分析反射光并调平基座，平移基座，将基座高度校准到预热环电平，以及响应分析的反射光检查基座的电平和位置。

公开(公告)号：US20090272719A1

公开(公告)日：2009-11-05

申请号：US12238921

申请日：2008-09-26

申请人： Richard O. Collins ,  Kailash Kiran Patalay ,  Jean R. Vatus ,  Zhepeng Cong

发明人： Richard O. Collins ,  Kailash Kiran Patalay ,  Jean R. Vatus ,  Zhepeng Cong

IPC分类号： C23F1/00 ,  C23C16/00 ,  B05D5/12 ,  H01L21/68 ,  C23F1/08

CPC分类号： H01L21/68 ,  C30B25/12 ,  H01L21/67259 ,  H01L21/68785 ,  H01L21/68792

摘要： A pedestal positioning assembly system for use in a substrate processing system includes a pedestal rigidly attached to a pedestal shaft, a reference rigidly attached to the substrate processing system, a lateral adjustment assembly to adjust a lateral location of the pedestal relative to the reference, and a vertical adjustment assembly to adjust a tilt of the pedestal relative to the reference. The lateral adjustment assembly and the vertical adjustment assembly are external to a processing chamber and are coupled to the pedestal disposed within the processing chamber through the pedestal shaft. The reference can be a ring and the lateral adjustment assembly substantially centers the pedestal within the ring. A method of adjusting a pedestal includes leveling the pedestal, translating the pedestal, calibrating the pedestal height to a preheat ring level, and checking the level and location of the pedestal while rotating the pedestal.

摘要翻译： 用于基板处理系统的基座定位组件系统包括刚性地连接到基座轴的基座，刚性地附接到基板处理系统的基准，横向调整组件，用于调节基座相对于基准的横向位置，以及 垂直调节组件，用于调节基座相对于基准的倾斜。 横向调节组件和垂直调节组件位于处理室的外部，并且通过基座轴联接到设置在处理室内的基座。 参考可以是环，并且横向调节组件使基座在环内基本上居中。 一种调节基座的方法包括调平基座，平移基座，将基座高度校准到预热环水平面，以及在旋转基座时检查基座的水平和位置。