公开(公告)号：US07015469B2

公开(公告)日：2006-03-21

申请号：US10755081

申请日：2004-01-09

申请人： Yun-Yu Wang ,  Masahiro Kawasaki ,  John Bruley ,  Anthony G. Domenicucci ,  Michael A. Gribelyuk ,  John G. Gaudiello

发明人： Yun-Yu Wang ,  Masahiro Kawasaki ,  John Bruley ,  Anthony G. Domenicucci ,  Michael A. Gribelyuk ,  John G. Gaudiello

IPC分类号： G03H5/00

CPC分类号： H01J37/26 ,  H01J2237/1514 ,  H01J2237/2614

摘要： An inline electron holograph method for observing a specimen with a transmission electron microscope having an electron gun, a collimating lens system, two spaced objective lenses, a biprism, and an imaging means comprises the steps of: with the first objective lens forming a virtual image of a portion of the specimen; with the second objective lens focussing the virtual image at an intermediate image plane to form an intermediate image; and projecting the intermediate image onto the imaging means.

摘要翻译： 用具有电子枪，准直透镜系统，两个间隔物镜，双棱镜和成像装置的透射电子显微镜观察样本的在线电子全息术方法包括以下步骤：通过第一物镜形成虚像 的一部分试样; 其中所述第二物镜将所述虚拟图像聚焦在中间图像平面处以形成中间图像; 并将所述中间图像投影到所述成像装置上。

公开(公告)号：US20050054156A1

公开(公告)日：2005-03-10

申请号：US10605128

申请日：2003-09-10

申请人： John Bruley ,  Kevin Chan ,  Paul Kirsch ,  Dae-Gyu Park

发明人： John Bruley ,  Kevin Chan ,  Paul Kirsch ,  Dae-Gyu Park

IPC分类号： C23C16/34 ,  H01L21/02 ,  H01L21/8242

CPC分类号： H01L21/02271 ,  C23C16/345 ,  H01L21/0217 ,  H01L21/02178 ,  H01L21/022 ,  H01L21/02334 ,  H01L21/3185 ,  H01L28/40

摘要： A method of fabricating a capacitor including an ultra-high vacuum chemical vapor deposition (UHVCVD) step to generate a top-side barrier film layer including silicon nitride at monolayer quantities, and a capacitor so formed, are disclosed. The UHVCVD step allows silicon nitride to be deposited with monolayer level control, and is more successful at placing the nitrogen near the top surface independent of the base film thickness. The resulting capacitor exhibits thermal stability and meets leakage targets after, for example, an approximately 1050° C. thermal treatment. In addition, the UHVCVD nitride step allows for an in situ thermal clean and simpler process control because the reaction is thermally driven.

摘要翻译： 公开了一种制造包括超高真空化学气相沉积（UHVCVD）步骤的电容器的方法，以生成包括单层量的氮化硅的顶侧阻挡膜层和如此形成的电容器。 UHVCVD步骤允许氮化硅沉积单层水平控制，并且在顶部表面附近放置氮而与基膜厚度无关的情况下更为成功。 所得到的电容器在例如约1050℃热处理之后具有热稳定性并满足泄漏目标。 此外，UHVCVD氮化物步骤允许原位热清洁和更简单的过程控制，因为反应是热驱动的。