摘要:
A large ceramic substrate article for electronic applications including at least one layer of sintered ceramic material, the layer including a plurality of greensheet segments of ceramic material joined edge to edge. Also disclosed is a method of fabricating a large ceramic greensheet article as well as a large ceramic substrate article.
摘要:
A method of processing greensheets, wherein the following steps are performed: a) providing a greensheet having a width, length, thickness, a first side and a second side; b) bonding to the first side of the greensheet at least one strip, wherein the strip lies in a first plane; c) bonding to the second side of the green sheet at least one strip, wherein the strip lies in a second plane; d) processing the greensheet; and e) removing the strips from the processed greensheet.
摘要:
A large ceramic substrate article for electronic applications including at least one layer of sintered ceramic material, the layer including a plurality of greensheet segments of ceramic material joined edge to edge. Also disclosed is a method of fabricating a large ceramic greensheet article as well as a large ceramic substrate article.
摘要:
The present invention relates generally to a new apparatus and method for forming cavities in semiconductor substrates without the necessity of using an insert. More particularly, the invention encompasses an apparatus and a method for fabricating cavities in semiconductor substrates wherein a coated membrane sheet is placed over the cavity prior to lamination and caused to conform to the contour of the cavity, thus preventing collapse of, or damage to, the cavity shelves during the lamination process. After the lamination process, the coated membrane is conveniently removed without causing damage to the cavity shelves or paste pull-outs.
摘要:
An electronic device console includes a console body that houses a chip package, and a duct extending from the console body. An interior volume of the duct is in fluid communication with an interior volume of the console body. A first vent is at a distal end of the duct. A second vent is in a wall of the console body. The console may be oriented in a first orientation and a second orientation. The duct functions as a chimney for natural convection cooling of the chip package when the console is oriented in the first orientation. The console body functions as a chimney for natural convection cooling of the chip package when the console is oriented in the second orientation.
摘要:
An interface layer for separating first and second microelectronic ceramic substrates during firing includes a thermally degradable binder, preferably a polymer, that degrades at temperatures above room temperature and below a firing temperature for the microelectronic ceramic substrates, and a separating material, such as boron nitride or graphite. The method of making the interface layer includes mixing the binder, one or more solvents for the binder, a plasticizer and the separating material for a sufficient period of time to form a homogeneous mass, then casting the material in a thin sheet to form the interface layer.
摘要:
Thermoelectric devices having enhanced thermal characteristics are fabricated using multilayer ceramic (MLC) technology methods. Aluminum nitride faceplates with embedded electrical connections provide the electrical series configuration for alternating dissimilar semiconducting materials. Embedded electrical connections are formed by vias and lines in the faceplate. Methods are employed for forming tunnels through lamination and etching. A portion of the dissimilar materials are then melted within the tunnels to form a bond. Thermal conductivity of the faceplate is enhanced by adding electrically isolated vias to one surface, filled with high thermal conductivity metal paste. A low thermal conductivity material is also introduced between the two high thermal conductivity material faceplates. Alternating semiconducting materials are introduced within the varying thermal conductivity layers by punching vias within greensheets of predetermined thermal conductivity and filling with n-type and p-type paste. Alternating semiconducting materials may also be patterned in linear or radial fanout patterns through screening techniques and lamination of wire structures. A liquid channel within the faceplate is used to enhance thermal energy transfer. Thermoelectric devices are physically incorporated within the IC package using MLC technology.
摘要:
Disclosed is an aluminum nitride body having graded metallurgy and a method for making such a body. The aluminum nitride body has at least one via and includes a first layer in direct contact with the aluminum nitride body and a second layer in direct contact with, and that completely encapsulates, the first layer. The first layer includes 30 to 60 volume percent aluminum nitride and 40 to 70 volume percent tungsten and/or molybdenum while the second layer includes 90 to 100 volume percent of tungsten and/or molybdenum and 0 to 10 volume percent of aluminum nitride.
摘要:
A structure and method for producing the same is disclosed. The structure includes an organic passivation layer with solids suspended therein. Preferential etch to remove a portion of the organic material and expose portions of such solids creates enhanced surface roughness, which provides a significant advantage with respect to adhesion of that passivation layer to the packaging underfill material.
摘要:
A low-k dielectric for use as an interlayer for an interconnect structure is provided. The dielectric of the present invention is an alkaline boron silicate glass which when formulated in certain compositional ranges can undergo spinodal decomposition when processed using certain thermal profiles. Spinodal decomposition is a chemical and physical separation of the silicate glass into a distinct interpenetrating microstructure which contains a substantially pure silicon dioxide network and a boron-rich network. The dimension (i.e., scale), and the amount of separation can be controlled through compositional and thermal control during the processing of the silicate glass.