摘要:
A lithographic exposure process is performed on a substrate using a scanner. The scanner comprises several subsystems. There are errors in the overlay arising from the subsystems during the exposure. The overlay errors are measured using a scatterometer to obtain overlay measurements. Modeling is performed to separately determine from the overlay measurements different subsets of estimated model parameters, for example field distortion model parameters, scan/step direction model parameters and position/deformation model parameters. Each subset is related to overlay errors arising from a corresponding specific subsystem of the lithographic apparatus. Finally, the exposure is controlled in the scanner by controlling a specific subsystem of the scanner using its corresponding subset of estimated model parameters. This results in a product wafer being exposed with a well controlled overlay.
摘要:
A method produces at least one monitor wafer for a lithographic apparatus. The monitor wafer is for use in combination with a scanning control module to periodically retrieve measurements defining a baseline from the monitor wafer thereby determining parameter drift from the baseline. In doing this, allowance and/or correction can be to be made for the drift. The baseline is determined by initially exposing the monitor wafer(s) using the lithographic apparatus, such that the initial exposure is performed while using non-standard alignment model settings optimized for accuracy, such as those used for testing the apparatus. An associated lithographic apparatus is also disclosed.
摘要:
A lithographic apparatus operates by moving a substrate and a patterning device relative to each other in a sequence of movements such that a pattern is applied at a successive portions on the substrate. Each portion of the substrate is patterned by a scanning operation in which the patterning device is scanned through the radiation beam while synchronously scanning the substrate through the patterned radiation beam so as to apply the pattern to the desired portion on the substrate. An intrafield correction is applied during each scanning operation so as to compensate for distortion effects which vary during the scanning operation. The intrafield correction includes corrective variations of one or more properties of the projection system, and optionally out-of-plane movements of the patterning device and/or substrate table.
摘要:
A method controls a scanning function of a lithographic apparatus. A first alignment strategy is used. A monitor wafer is exposed to determine baseline control parameters pertaining to the scanning function. The baseline control parameters are periodically retrieved from the monitor wafer. Parameter drift is determined from the baseline control parameters. Corrective action is taken based on the determination. A production wafer is exposed using a second alignment strategy, different to the first alignment strategy. The corrective action is modified so as to be substantially closer to the correction that would have been made had the second alignment strategy been used in exposing the monitor wafer.
摘要:
A lithographic apparatus includes a substrate support that is constructed to support a substrate, and a projection system that is configured to project a patterned radiation beam onto a target portion of the substrate. The substrate support is arranged to move the substrate along a predetermined trajectory of subsequently targeted target portions of the substrate. The substrate support includes a duct configuration for providing thermal stabilization to the substrate. The duct configuration is arranged to duct thermally stabilizing media in the support, and to substantially duct the media away from a part of the substrate support that supports the target portion via parts of the substrate support that support previously targeted portions of the substrate, so as to keep subsequently targeted target portions thermally stable.
摘要:
A lithographic apparatus operates by moving a substrate and a patterning device relative to each other in a sequence of movements such that a pattern is applied at a successive portions on the substrate. Each portion of the substrate is patterned by a scanning operation in which the patterning device is scanned through the radiation beam while synchronously scanning the substrate through the patterned radiation beam so as to apply the pattern to the desired portion on the substrate. An intrafield correction is applied during each scanning operation so as to compensate for distortion effects which vary during the scanning operation. The intrafield correction includes corrective variations of one or more properties of the projection system, and optionally out-of-plane movements of the patterning device and/or substrate table.
摘要:
A method produces at least one monitor wafer for a lithographic apparatus. The monitor wafer is for use in combination with a scanning control module to periodically retrieve measurements defining a baseline from the monitor wafer, thereby determining parameter drift from the baseline. In doing this, allowance and/or correction can be to be made for the drift. The baseline is determined by initially exposing the monitor wafer(s) using the lithographic apparatus to perform multiple exposure passes on each of the monitor wafer(s). An associated lithographic apparatus is also disclosed.
摘要:
A method and apparatus of correcting thermally-induced field deformations of a lithographically exposed substrate, is presented herein. In one embodiment, the method includes exposing a pattern onto a plurality of fields of a substrate in accordance with pre-specified exposure information and measuring attributes of the fields to assess deformation of the fields induced by thermal effects of the exposing process. The method further includes determining corrective information based on the measured attributes, and adjusting the pre-specified exposure information, based on the corrective information, to compensate for the thermally-induced field deformations. Other embodiments include the use of predictive models to predict thermally-induced effects on the fields and thermographic imaging to determine temperature variations across a substrate.
摘要:
A calibration substrate for use during calibration of a lithographic apparatus is disclosed. The calibration substrate includes a first substantially flat surface, a second substantially flat surface that is substantially parallel to the first surface, and an edge that connects the first surface to the second surface. The calibration substrate has a thermal expansion coefficient of less than about 1.0×10−6 K−1 to reduce deformation thereof due to thermal changes in the substrate while in the lithographic apparatus.
摘要:
A system and method for calibrating system parameters of a lithography apparatus is disclosed. The system includes a measurement device configured to measure an overlay error between patterns formed on a substrate during different exposures and a processing device configured to determine a model representative of a relationship between the overlay error and a system parameter error based on the measured overlay error. The method includes measuring an overlay error between patterns formed at different exposures with the substrate positioned at different orientations during each of the different exposures. The method further includes determining a model representative of a relationship between the overlay error and a system parameter error based on the measured overlay error and deriving a calibration correction factor from the model.