System for ion energy control during plasma processing
    11.
    发明授权
    System for ion energy control during plasma processing 失效
    等离子体处理过程中的离子能量控制系统

    公开(公告)号:US6097157A

    公开(公告)日:2000-08-01

    申请号:US57892

    申请日:1998-04-09

    IPC分类号: H01J37/32 H05H1/46 H05H1/00

    CPC分类号: H01J37/32935 H05H1/46

    摘要: An apparatus and method for controlling the plasma potential of a plasma within a plasma chamber (50) is disclosed. The apparatus and method utilize a Faraday shielded inductive source antenna (60) to generate the plasma within the plasma chamber (50) and an electrically conductive probe (100) that is inserted into the plasma chamber (50) to regulate the plasma potential. By independent biasing of the conductive probe (100), which regulates the plasma potential, the ion energy distribution at a conductive substrate (150) within the plasma chamber (50) may be controlled.

    摘要翻译: 公开了一种用于控制等离子体室(50)内的等离子体的等离子体电位的装置和方法。 该装置和方法利用法拉第屏蔽感应源天线(60)在等离子体室(50)内产生等离子体,以及插入等离子体室(50)中以调节等离子体电位的导电探针(100)。 通过调节等离子体电位的导电探针(100)的独立偏置,可以控制等离子体室(50)内的导电衬底(150)处的离子能量分布。