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31 条记录 (耗时 0.034 秒)

    Boom extension for gantry cranes
    11.
    发明授权
    Boom extension for gantry cranes 失效
    龙门起重机的扩展

    公开(公告)号：US5265741A

    公开(公告)日：1993-11-30

    申请号：US928946

    申请日：1992-08-11

    申请人： Yuzo Shimizu ,  Hans G. Vosskamp ,  Yuksel Yildirim

    发明人： Yuzo Shimizu ,  Hans G. Vosskamp ,  Yuksel Yildirim

    IPC分类号： B66C19/00 ,  B66C23/66 ,  B66C23/70

    CPC分类号： B66C19/002 ,  B66C23/66

    摘要： An apparatus and method for providing a boom extension for retractable booms of gantry cranes which does not require lowering the boom during attachment of the extension, or increasing the lift capacity of the boom hoist machinery, nor does the boom extension add bending moment to the retractable boom.

    摘要翻译： 一种用于为龙门起重机的可伸缩起重臂提供吊杆延伸的装置和方法，其不需要在附接延伸部期间降低吊臂，或者增加吊臂起重机械的提升能力，而且吊臂延伸部也将弯矩加到可伸缩的 繁荣。

    Optical pickup device
    12.
    发明授权
    Optical pickup device 失效
    光学拾取装置

    公开(公告)号：US08009527B2

    公开(公告)日：2011-08-30

    申请号：US11941488

    申请日：2007-11-16

    申请人： Shinichi Hamaguchi ,  Yuzo Shimizu ,  Daisuke Furukawa ,  Naoto Shimada ,  Toshihiro Kuroda ,  Toyonori Kusuhara ,  Hiroaki Yamamoto

    发明人： Shinichi Hamaguchi ,  Yuzo Shimizu ,  Daisuke Furukawa ,  Naoto Shimada ,  Toshihiro Kuroda ,  Toyonori Kusuhara ,  Hiroaki Yamamoto

    IPC分类号： G11B7/00

    CPC分类号： G11B7/1353 ,  G11B7/1275 ,  G11B7/1381 ,  G11B2007/0006

    摘要： The optical pickup device according to the present invention includes: a light source which emits a first light at a first wavelength, a second light at a second wavelength and a third light at a third wavelength; an optical path combining unit which combines vectors of the first, second and third light emitted by the light source, and matches optical axes of the first light and the third light; a light collection unit which condenses the light from the optical path combining unit into the optical information storage medium; a diffraction element which diffracts reflected light from the optical information storage medium; a first photo detector, a second photo detector and a third photo detector which receives the diffracted light from the first diffraction element; and a prevention unit formed between the first diffraction element and the first photo detector, the second photo detector and the third photo detector, and which prevents irradiation of + first-order diffracted light diffracted by the first diffraction element into the first photo detector, the second photo detector, and the third photo detector.

    摘要翻译： 根据本发明的光拾取装置包括：发射第一波长的第一光，第二波长的第二光和第三​​波长的第三光的光源; 光路组合单元，其组合由所述光源发射的所述第一，第二和第三光的矢量，并且匹配所述第一光和所述第三光的光轴; 光收集单元，其将来自光路组合单元的光聚合到光信息存储介质中; 衍射元件，其衍射来自光学信息存储介质的反射光; 第一光检测器，第二光检测器和第三光检测器，其接收来自第一衍射元件的衍射光; 以及防止单元，形成在第一衍射元件和第一光电检测器，第二光电检测器和第三光电检测器之间，并且防止第一衍射元件衍射的+一级衍射光照射到第一光检测器中， 第二光检测器和第三光检测器。

    Semiconductor device and method for manufacturing the same
    14.
    发明授权
    Semiconductor device and method for manufacturing the same 失效
    半导体装置及其制造方法

    公开(公告)号：US06700144B2

    公开(公告)日：2004-03-02

    申请号：US10155470

    申请日：2002-05-24

    申请人： Toyoyuki Shimazaki ,  Katuichi Ohsawa ,  Tetsuo Chato ,  Yuzo Shimizu

    发明人： Toyoyuki Shimazaki ,  Katuichi Ohsawa ,  Tetsuo Chato ,  Yuzo Shimizu

    IPC分类号： H01L31062

    CPC分类号： H01L21/8249 ,  H01L27/0623

    摘要： A semiconductor device includes the following: a semiconductor substrate of a first conduction type; an intrinsic semiconductor layer of the first conduction type formed on the semiconductor substrate; a first semiconductor layer of a second conduction type formed on the intrinsic semiconductor layer; a first impurity layer of the first conduction type formed in the first semiconductor layer of the second conduction type; and a bipolar transistor and a MIS transistor formed in the first semiconductor layer of the second conduction type. The laminated structure of the semiconductor substrate, the intrinsic semiconductor layer, and the first semiconductor layer provides a diode for photoelectric conversion. A first insulator layer and a second insulator layer are formed respectively in at least a portion below the bipolar transistor and the MIS transistor. The transistors are isolated from the semiconductor substrate by the insulator layers, so that the characteristics of the transistors can be adjusted independently of the diode.

    摘要翻译： 半导体器件包括：第一导电类型的半导体衬底; 形成在半导体衬底上的第一导电类型的本征半导体层; 形成在本征半导体层上的第二导电类型的第一半导体层; 形成在第二导电类型的第一半导体层中的第一导电类型的第一杂质层; 以及形成在第二导电类型的第一半导体层中的双极晶体管和MIS晶体管。 半导体衬底，本征半导体层和第一半导体层的层叠结构提供用于光电转换的二极管。 分别在双极晶体管和MIS晶体管的至少一部分内形成第一绝缘体层和第二绝缘体层。 晶体管通过绝缘体层与半导体衬底隔离，从而可以独立于二极管来调整晶体管的特性。

    Optical semiconductor device
    19.
    发明授权
    Optical semiconductor device 有权
    光半导体器件

    公开(公告)号：US06459711B1

    公开(公告)日：2002-10-01

    申请号：US09477426

    申请日：2000-01-04

    申请人： Shin-ichi Hamaguchi ,  Yuzo Shimizu ,  Toru Tsuruta ,  Masanori Hirose

    发明人： Shin-ichi Hamaguchi ,  Yuzo Shimizu ,  Toru Tsuruta ,  Masanori Hirose

    IPC分类号： H01S5022

    CPC分类号： H01S5/02292 ,  H01S5/02248 ,  H01S5/0683

    摘要： To more precisely output signals of optical recording media, a semiconductor laser element is mounted in a concave portion on the surface of a semiconductor substrate so that the optical axis of signal detecting light emitted from the semiconductor laser element is substantially parallel to the surface of the semiconductor substrate, and the light emitted from the semiconductor laser element is reflected at the side surface of the concave portion that is opposed to the signal detecting light emitting side of the semiconductor laser element in a direction substantially perpendicular to the surface of the semiconductor substrate. A light receiving portion for signal detection is provided in an area outside the concave portion on the surface of the semiconductor substrate where the semiconductor laser element is mounted. When the signal detecting light emitting side of the semiconductor laser element is the front side of the semiconductor laser element, a first light intercepting region is provided in areas posterior to, obliquely posterior to and at the left and right sides of the semiconductor laser element on the bottom surface of the concave portion, and a second light intercepting region is provided on, of the side surfaces of the concave portion, at least the side surface between the semiconductor laser element and the light receiving portion.

    摘要翻译： 为了更准确地输出光记录介质的信号，将半导体激光元件安装在半导体衬底的表面上的凹部中，使得从半导体激光元件发射的信号检测光的光轴基本上平行于 并且从半导体激光元件发射的光在与半导体激光元件的信号检测光发射侧相对的侧面处在与半导体衬底的表面基本垂直的方向上被反射。 在安装有半导体激光元件的半导体基板的表面上的凹部外侧的区域设置有用于信号检测的光接收部。 当半导体激光元件的信号检测光发射侧是半导体激光元件的正面时，在半导体激光器元件的后面，斜后方和左侧和右侧的区域中设置第一遮光区域 凹部的底面和第二遮光区域至少设置在半导体激光元件和受光部之间的侧面的凹部的侧面。