公开(公告)号：US20110012221A1

公开(公告)日：2011-01-20

申请号：US12919638

申请日：2009-03-09

申请人： Junichi Fujikata ,  Toru Tatsumi ,  Akihito Tanabe ,  Jun Ushida ,  Daisuke Okamoto ,  Kenichi Nishi

发明人： Junichi Fujikata ,  Toru Tatsumi ,  Akihito Tanabe ,  Jun Ushida ,  Daisuke Okamoto ,  Kenichi Nishi

IPC分类号： H01L31/105

CPC分类号： H01L31/105 ,  G02B6/12004 ,  G02B6/4204 ,  G02B6/4214 ,  H01L31/022408 ,  H01L31/028 ,  H01L31/03529 ,  Y02E10/547

摘要： The lattice mismatching between a Ge layer and a Si layer is as large as about 4%. Thus, when the Ge layer is grown on the Si layer, penetration dislocation is introduced to cause leakage current at the p-i-n junction. Thereby, the photo-detection sensitivity is reduced, and the reliability of the element is also lowered. Further, in the connection with a Si waveguide, there are also problems of the reflection loss due to the difference in refractive index between Si and Ge, and of the absorption loss caused by a metal electrode. In order to solve said problems, according to the present invention, there is provided a vertical type pin-SiGe photodiode having a structure which is embedded in a groove formed in a part of a Si layer, in which a p-type or n-type doped layer is formed in a lower section of the groove, and in which a i-SiGe layer having a rectangular shape or a reverse tapered shape is formed on a layered structure formed by laminating a i-Si layer and a SiGe buffer layer on the lower section and the side wall of the groove. Further, in an optical connection section with a Si waveguide, impedance matching is effected by the layered structure composed of the i-Si layer and the SiGe buffer layer, and an upper metal layer is separated therefrom so that a poly-Si bridge structure is employed to electrically connect the upper metal layer therewith.

摘要翻译： Ge层与Si层之间的晶格失配大至4％左右。 因此，当Ge层在Si层上生长时，引入穿透位错以在p-i-n结处引起漏电流。 因此，光检测灵敏度降低，并且元件的可靠性也降低。 此外，在与Si波导的连接中，还存在由于Si和Ge之间的折射率的差异以及由金属电极引起的吸收损耗的反射损耗的问题。 为了解决所述问题，根据本发明，提供了一种垂直型pin-SiGe光电二极管，其具有嵌入到形成在Si层的一部分中的凹槽中的结构，其中p型或n- 在沟槽的下部形成有型掺杂层，其中在通过层叠i-Si层和SiGe缓冲层而形成的层叠结构上形成具有矩形或倒锥形的i-SiGe层 凹槽的下部和侧壁。 此外，在具有Si波导的光学连接部中，通过由i-Si层和SiGe缓冲层构成的层叠结构实现阻抗匹配，并且将上部金属层与其分离，使得多Si桥结构 用于将上部金属层电连接到其上。

公开(公告)号：US20110002582A1

公开(公告)日：2011-01-06

申请号：US12919461

申请日：2009-02-10

申请人： Daisuke Okamoto ,  Kenichi Nishi ,  Junichi Fujikata ,  Jun Ushida

发明人： Daisuke Okamoto ,  Kenichi Nishi ,  Junichi Fujikata ,  Jun Ushida

IPC分类号： G02B6/12 ,  H01L21/02

CPC分类号： H01L25/0657 ,  H01L23/48 ,  H01L23/645 ,  H01L24/13 ,  H01L24/16 ,  H01L24/48 ,  H01L25/167 ,  H01L2224/13099 ,  H01L2224/16145 ,  H01L2224/48095 ,  H01L2224/48227 ,  H01L2224/73207 ,  H01L2225/0651 ,  H01L2225/06513 ,  H01L2225/06531 ,  H01L2225/06534 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01023 ,  H01L2924/01033 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/30105 ,  H01L2924/30107 ,  Y10T29/41 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： Provided is a semiconductor optical interconnection device capable of transmitting signals between laminated semiconductor chips in a structure where semiconductor chips highly functionalized by being bonded to an optical interconnection chip are laminated. The semiconductor optical interconnection device includes a semiconductor chip 1 and an optical interconnection chip 2. The optical interconnection chip 2 includes an optical element formed thereon (for instance, a photo-sensitive element, a luminous element, or an optical modulator) which has a function relating to signal conversion between light and electricity. The semiconductor chip 1 includes a transmission section 3 (for instance, a coil or an inductor) to transmit signals in a non-contact manner, and a connection section 4 (for instance, a bump) to electrically connect with the optical element.

摘要翻译： 提供一种半导体光互连装置，其能够在层叠半导体芯片之间的层叠半导体芯片之间传输信号，其结构是通过层叠了通过结合到光互连芯片而被高度功能化的半导体芯片。 半导体光互连装置包括半导体芯片1和光互连芯片2.光互连芯片2包括形成在其上的光学元件（例如，光敏元件，发光元件或光调制器），其具有 功能与光和电之间的信号转换有关。 半导体芯片1包括以非接触方式传输信号的传输部分3（例如，线圈或电感器）以及与光学元件电连接的连接部分4（例如，凸块）。

公开(公告)号：US20100308428A1

公开(公告)日：2010-12-09

申请号：US12811863

申请日：2009-01-09

申请人： Daisuke Okamoto ,  Junichi Fujikata ,  Kenichi Nishi

发明人： Daisuke Okamoto ,  Junichi Fujikata ,  Kenichi Nishi

IPC分类号： H01L31/0232 ,  H01L31/0352 ,  H01L31/0216

CPC分类号： H01L31/03529 ,  H01L31/02165 ,  Y02E10/50

摘要： A semiconductor light receiving element comprises: a substrate, a semiconductor layer of a first conductivity type formed on the substrate, a non-doped semiconductor light absorbing layer formed on the semiconductor layer of the first conductivity type, a semiconductor layer of a second conductivity type formed on the non-doped semiconductor light absorbing layer, and an electro-conductive layer formed on the semiconductor layer of the second conductivity type. A plurality of openings, periodically arrayed, are formed in a laminated body composed of the electro-conductive layer, the semiconductor layer of the second conductivity type, and the non-doped semiconductor light absorbing layer. The widths of the openings are less than or equal to the wavelength of incident light, and the openings pass through the electro-conductive layer and the semiconductor layer of the second conductivity type to reach the non-doped semiconductor light absorbing layer.

摘要翻译： 半导体光接收元件包括：基板，形成在基板上的第一导电类型的半导体层，形成在第一导电类型的半导体层上的非掺杂半导体光吸收层，第二导电类型的半导体层 形成在非掺杂半导体光吸收层上的导电层和形成在第二导电类型的半导体层上的导电层。 周期排列的多个开口形成在由导电层，第二导电类型的半导体层和非掺杂半导体光吸收层组成的层叠体中。 开口的宽度小于或等于入射光的波长，并且开口穿过导电层和第二导电类型的半导体层以到达非掺杂半导体光吸收层。

公开(公告)号：US20090269084A1

公开(公告)日：2009-10-29

申请号：US12067625

申请日：2006-09-26

申请人： Masayuki Mizuno ,  Keishi Ohashi ,  Koichi Nose ,  Kenichi Nishi

发明人： Masayuki Mizuno ,  Keishi Ohashi ,  Koichi Nose ,  Kenichi Nishi

IPC分类号： H04B10/06

CPC分类号： H04B10/69 ,  H03K17/785

摘要： A light receiving circuit (114) includes a light inputting circuit (113) which converts one-system optical signal to be outputted from an optical transmission path (101) to an electrical signal and inverts a potential of the electrical signal each time the optical signal is detected, and a buffer circuit (110) which amplifies the electrical signal converted by the light inputting circuit and outputs the same. According to such configuration, since one-system optical signal may be inputted to the light receiving circuit, a system circuit configuration can be avoided to be complicated.

摘要翻译： 光接收电路（114）包括光输入电路（113），其将从光传输路径（101）输出的单系统光信号转换为电信号，并且每当光信号 以及缓冲电路（110），放大由光输入电路转换的电信号并输出​​。 根据这样的结构，由于可以将单一系统光信号输入到光接收电路，所以可以避免系统电路结构复杂化。

公开(公告)号：US08023832B2

公开(公告)日：2011-09-20

申请号：US12067625

申请日：2006-09-26

申请人： Masayuki Mizuno ,  Keishi Ohashi ,  Koichi Nose ,  Kenichi Nishi

发明人： Masayuki Mizuno ,  Keishi Ohashi ,  Koichi Nose ,  Kenichi Nishi

IPC分类号： H04B10/06

CPC分类号： H04B10/69 ,  H03K17/785

摘要： A light receiving circuit (114) includes a light inputting circuit (113) which converts one-system optical signal to be outputted from an optical transmission path (101) to an electrical signal and inverts a potential of the electrical signal each time the optical signal is detected, and a buffer circuit (110) which amplifies the electrical signal converted by the light inputting circuit and outputs the same. According to such configuration, since one-system optical signal may be inputted to the light receiving circuit, a system circuit configuration can be avoided to be complicated.

摘要翻译： 光接收电路（114）包括光输入电路（113），其将从光传输路径（101）输出的单系统光信号转换为电信号，并且每当光信号 以及缓冲电路（110），放大由光输入电路转换的电信号并输出​​。 根据这样的结构，由于可以将单一系统光信号输入到光接收电路，所以可以避免系统电路结构复杂化。

公开(公告)号：US08625193B2

公开(公告)日：2014-01-07

申请号：US13121528

申请日：2009-07-30

申请人： Kenichi Nishi

发明人： Kenichi Nishi

IPC分类号： H01S5/30

CPC分类号： H01S5/341 ,  B82Y20/00 ,  H01S5/10 ,  H01S5/1053 ,  H01S5/22 ,  H01S5/3412

摘要： The present invention is an optical semiconductor device including a lower clad layer 12 having a first conduction type, an active layer 14 that is provided on the lower clad layer 12 and has multiple quantum dot layers 51-55 having multiple quantum dots 41, and an upper clad layer 18 that is provided on the active layer 14 and has a second conduction type opposite to the first conduction type, the multiple quantum dot layers 51-55 having different quantum dot densities.

摘要翻译： 本发明是一种光半导体器件，其包括具有第一导电类型的下包层12，在下包层12上设置的具有多个量子点41的多个量子点层51-55的有源层14和 上覆盖层18设置在有源层14上并且具有与第一导电类型相反的第二导电类型，多个量子点层51-55具有不同的量子点密度。

公开(公告)号：US6078062A

公开(公告)日：2000-06-20

申请号：US936921

申请日：1997-09-25

申请人： Masaru Kuramoto ,  Kenichi Nishi ,  Hiroshi Iwata

发明人： Masaru Kuramoto ,  Kenichi Nishi ,  Hiroshi Iwata

IPC分类号： H01L33/16 ,  H01L33/28 ,  H01L33/30 ,  H01L33/40 ,  H01S5/00 ,  H01S5/327 ,  H01L33/00

CPC分类号： H01L33/24 ,  H01L33/28

摘要： Provided by the present invention is a II-VI compound semiconductor based light emitting device which is suppressed in the propagation velocity of crystal defects at the time of current application, has a prolonged lifetime and can be readily mass produced. The device has a recombination region and non-recombination region of carriers which have been separated spatially each other in the plane of the active layer.

摘要翻译： 本发明提供一种在施加电流时抑制晶体缺陷的传播速度的II-VI族化合物半导体发光器件，其寿命延长并且可以容易地批量生产。 该器件具有在有源层的平面中彼此空间分离的载流子的复合区域和非复合区域。

公开(公告)号：US07709235B2

公开(公告)日：2010-05-04

申请号：US11883306

申请日：2006-01-26

申请人： Kenichi Nishi ,  Satohiro Yanagisawa ,  Hirokazu Nanba ,  Makoto Ueda ,  Naoto Noro

发明人： Kenichi Nishi ,  Satohiro Yanagisawa ,  Hirokazu Nanba ,  Makoto Ueda ,  Naoto Noro

IPC分类号： C12P21/06 ,  C12P13/04 ,  C12P17/10 ,  C12N9/00 ,  C12N1/20 ,  C07H21/04

CPC分类号： C12P13/04 ,  C12N9/90 ,  C12P41/009

摘要： Disclosed are a novel hydantoin racemase and a process for producing an optically active N-carbamylamino acid or an optically active amino acid using the hydantoin racemase. A novel hydantoin racemase isolated and purified from Bacillus sp. Strain KNK519HR; a gene encoding the hydantoin racemase; a recombinant plasmid having the gene introduced therein; a transformant having the hydantoin racemase gene introduced therein; and a process for producing an optically active N-carbamylamino acid or an optically active amino acid characterized in that a 5-substituted hydantoin compound is treated in the presence of hydantoinase and N-carbamylamino acid amidohydrolase as well as the hydantoin racemase.

摘要翻译： 公开了一种新型乙内酰脲消旋酶和使用乙内酰脲消旋酶制备光学活性N-氨基甲酰基氨基酸或光学活性氨基酸的方法。 从芽孢杆菌分离和纯化的新型乙内酰脲消化酶 菌株KNK519HR; 编码乙内酰脲消化酶的基因; 具有引入其中的基因的重组质粒; 其中引入了乙内酰脲消化酶基因的转化体; 以及用于制备光学活性N-氨基甲酰基氨基酸或光学活性氨基酸的方法，其特征在于在乙内酰脲酶和N-氨基甲酰基氨基酸酰胺水解酶以及乙内酰脲消旋酶的存在下处理5-取代的乙内酰脲化合物。

公开(公告)号：US20080261268A1

公开(公告)日：2008-10-23

申请号：US11883306

申请日：2006-01-26

申请人： Kenichi Nishi ,  Satohiro Yanagisawa ,  Hirokazu Nanba ,  Makoto Ueda ,  Naoto Noro

发明人： Kenichi Nishi ,  Satohiro Yanagisawa ,  Hirokazu Nanba ,  Makoto Ueda ,  Naoto Noro

IPC分类号： C12P21/04 ,  C12N9/90 ,  C12N15/11 ,  C12P17/10 ,  C12P13/04 ,  C12N15/00 ,  C12N1/20

CPC分类号： C12P13/04 ,  C12N9/90 ,  C12P41/009

摘要： Disclosed are a novel hydantoin racemase and a process for producing an optically active N-carbamylamino acid or an optically active amino acid using the hydantoin racemase. A novel hydantoin racemase isolated and purified from Bacillus sp. Strain KNK519HR; a gene encoding the hydantoin racemase; a recombinant plasmid having the gene introduced therein; a transformant having the hydantoin racemase gene introduced therein; and a process for producing an optically active N-carbamylamino acid or an optically active amino acid characterized in that a 5-substituted hydantoin compound is treated in the presence of hydantoinase and N-carbamylamino acid amidohydrolase as well as the hydantoin racemase.

摘要翻译： 公开了一种新型乙内酰脲消旋酶和使用乙内酰脲消旋酶制备光学活性N-氨基甲酰基氨基酸或光学活性氨基酸的方法。 从芽孢杆菌分离和纯化的新型乙内酰脲消化酶 菌株KNK519HR; 编码乙内酰脲消化酶的基因; 具有引入其中的基因的重组质粒; 其中引入了乙内酰脲消化酶基因的转化体; 以及用于制备光学活性N-氨基甲酰基氨基酸或光学活性氨基酸的方法，其特征在于在乙内酰脲酶和N-氨基甲酰基氨基酸酰胺水解酶以及乙内酰脲消旋酶的存在下处理5-取代的乙内酰脲化合物。

公开(公告)号：US08133117B2

公开(公告)日：2012-03-13

申请号：US10771309

申请日：2004-02-05

申请人： Kenshiro Ueda ,  Kenichi Nishi

发明人： Kenshiro Ueda ,  Kenichi Nishi

IPC分类号： G06F19/00

CPC分类号： A63F13/52 ,  A63F13/10 ,  A63F13/54 ,  A63F13/57 ,  A63F2300/30 ,  A63F2300/6063 ,  A63F2300/64 ,  A63F2300/66 ,  A63F2300/6653

摘要： A game apparatus includes a CPU, and in the game apparatus, letters are displayed as visual support for a sound generated by a message generating object. When a game message is displayed, a distance between the message generating object and a player object is calculated. Then, a form of the letters to be displayed on a billboard is changed depending upon the calculated distance. The form to be changed is, for example, transparency and a size of the letters. Thus, a game image in which the form of the letters is changed depending upon the distance between the player object and the message generating object is displayed.

摘要翻译： 游戏装置包括CPU，并且在游戏装置中，字母被显示为由消息产生对象产生的声音的视觉支持。 当显示游戏消息时，计算消息产生对象和玩家对象之间的距离。 然后，根据计算出的距离改变要在广告牌上显示的字母的形式。 要更改的形式是，例如，透明度和字母的大小。 因此，显示其中字母的形式根据玩家对象和消息生成对象之间的距离而改变的游戏图像。