公开(公告)号：US08927114B2

公开(公告)日：2015-01-06

申请号：US10575120

申请日：2005-11-24

申请人： Ryoji Nomura ,  Satoshi Seo ,  Hiroko Abe ,  Takako Takasu ,  Hideko Inoue ,  Hisao Ikeda ,  Daisuke Kumaki ,  Junichiro Sakata

发明人： Ryoji Nomura ,  Satoshi Seo ,  Hiroko Abe ,  Takako Takasu ,  Hideko Inoue ,  Hisao Ikeda ,  Daisuke Kumaki ,  Junichiro Sakata

IPC分类号： H01L51/54 ,  H01L51/50 ,  H01L51/00

CPC分类号： H01L51/5052 ,  H01L51/0062 ,  H01L51/0094 ,  H01L51/5016 ,  Y10S428/917

摘要： A layer included in an electroluminescent element is required to be thickened to optimize light extraction efficiency of the electroluminescent element and to prevent short-circuit between electrodes. However, in a conventional element material, desired light extraction efficiency cannot be accomplished since drive voltage rises or power consumption is increased as the element material is thickened. A composite is formed by mixing a conjugated molecule having low ionization potential and a substance having an electron-accepting property to the conjugated molecule. A composite layer included in an element is formed using the composite as an element material. The composite layer is arranged between a first electrode and a light emitting layer or between a second electrode and a light emitting layer. The composite layer has high conductivity; therefore, drive voltage does not rise even if a film thickness is increased. Thus, an electroluminescent element which can prevent short-circuit of an electrode can be provided.

公开(公告)号：US08841163B2

公开(公告)日：2014-09-23

申请号：US13399369

申请日：2012-02-17

申请人： Shunpei Yamazaki ,  Junichiro Sakata ,  Hiroki Ohara

发明人： Shunpei Yamazaki ,  Junichiro Sakata ,  Hiroki Ohara

IPC分类号： H01L21/00 ,  H01L29/10 ,  H01L21/324 ,  H01L21/28 ,  H01L29/04 ,  H01L29/66 ,  H01L29/786

CPC分类号： H01L21/465 ,  H01L21/02565 ,  H01L21/28176 ,  H01L21/324 ,  H01L21/477 ,  H01L29/04 ,  H01L29/045 ,  H01L29/66742 ,  H01L29/66969 ,  H01L29/78603 ,  H01L29/78606 ,  H01L29/78618 ,  H01L29/78642 ,  H01L29/78648 ,  H01L29/7869 ,  H01L29/78696

摘要： A semiconductor device for high power application in which a novel semiconductor material having high mass productivity is provided. An oxide semiconductor film is formed, and then, first heat treatment is performed on the exposed oxide semiconductor film in order to reduce impurities such as moisture or hydrogen in the oxide semiconductor film. Next, in order to further reduce impurities such as moisture or hydrogen in the oxide semiconductor film, oxygen is added to the oxide semiconductor film by an ion implantation method, an ion doping method, or the like, and after that, second heat treatment is performed on the exposed oxide semiconductor film.

摘要翻译： 一种用于大功率应用的半导体器件，其中提供了具有高质量生产率的新型半导体材料。 形成氧化物半导体膜，然后对暴露的氧化物半导体膜进行第一热处理，以便减少氧化物半导体膜中的杂质如水分或氢。 接下来，为了进一步减少氧化物半导体膜中的杂质，例如水分或氢气，通过离子注入法，离子掺杂法等将氧添加到氧化物半导体膜中，之后，第二热处理为 在暴露的氧化物半导体膜上进行。

公开(公告)号：US08818538B2

公开(公告)日：2014-08-26

申请号：US11585139

申请日：2006-10-24

申请人： Junichiro Sakata

发明人： Junichiro Sakata

IPC分类号： G06F17/00

CPC分类号： G06F3/16 ,  G06F3/0481 ,  G06F17/30772 ,  G10H1/0041 ,  G11B27/034 ,  G11B27/105 ,  G11B27/34 ,  G11B2020/10546 ,  G11B2220/213 ,  G11B2220/2545 ,  H04N21/4312 ,  H04N21/4825

摘要： Audio data are played back by a personal computer a relationship with a playback process recognized easily. Displays showing the contents of play lists are arranged and displayed so that the contents become continuous in sequence in a playback sequence from content that is currently being played back from a display of an operation element that causes an image of a playback process to appear or from a display showing the content which is currently being played back. When the playback of one piece of content of one play list from among a plurality of play lists is terminated and one piece of content of an other play list is played back, at least the content that is currently being played back and content to be subsequently played back are displayed so that the contents can be distinguished.

摘要翻译： 音频数据由个人计算机与容易识别的回放过程的关系回放。 显示播放列表的内容的显示被布置和显示，使得内容从播放过程的图像的显示器上显示的当前正在播放的内容的播放顺序依次连续显示，或者从 显示当前正在播放的内容的显示器。 当多个播放列表中的一个播放列表的一条内容的回放被终止，并且播放另一个播放列表的一条内容时，至少播放当前正在播放的内容和随后的内容 显示回放，以便区分内容。

公开(公告)号：US08796078B2

公开(公告)日：2014-08-05

申请号：US12787757

申请日：2010-05-26

申请人： Toshinari Sasaki ,  Hiroki Ohara ,  Junichiro Sakata

发明人： Toshinari Sasaki ,  Hiroki Ohara ,  Junichiro Sakata

IPC分类号： H01L21/336 ,  H01L21/786

CPC分类号： H01L29/66969 ,  H01L21/02164 ,  H01L21/02565 ,  H01L21/30604 ,  H01L29/45 ,  H01L29/78618 ,  H01L29/7869 ,  H01L29/78696

摘要： An object is to provide a highly reliable semiconductor device including a thin film transistor having stable electric characteristics. In addition, another object is to manufacture a highly reliable semiconductor device at low cost with high productivity. In a method for manufacturing a semiconductor device including a thin film transistor including an oxide semiconductor layer as a channel formation region, the oxide semiconductor layer is heated under a nitrogen atmosphere to lower its resistance, thereby forming a low-resistance oxide semiconductor layer. Further, resistance of a region of the low-resistance oxide semiconductor layer, which is overlapped with a gate electrode layer, is selectively increased, thereby forming a high-resistance oxide semiconductor layer. Resistance of the oxide semiconductor layer is increased by forming a silicon oxide film in contact with the oxide semiconductor layer by a sputtering method.

摘要翻译： 目的在于提供一种具有稳定电特性的薄膜晶体管的高度可靠的半导体装置。 此外，另一个目的是以高生产率以低成本制造高度可靠的半导体器件。 在包括具有作为沟道形成区域的氧化物半导体层的薄膜晶体管的半导体器件的制造方法中，在氮气气氛下加热氧化物半导体层以降低其电阻，从而形成低电阻氧化物半导体层。 此外，选择性地增加与栅电极层重叠的低电阻氧化物半导体层的区域的电阻，从而形成高电阻氧化物半导体层。 通过溅射法形成与氧化物半导体层接触的氧化硅膜，可提高氧化物半导体层的电阻。

公开(公告)号：US08729550B2

公开(公告)日：2014-05-20

申请号：US12835906

申请日：2010-07-14

申请人： Shunpei Yamazaki ,  Junichiro Sakata ,  Hiroyuki Miyake ,  Hideaki Kuwabara

发明人： Shunpei Yamazaki ,  Junichiro Sakata ,  Hiroyuki Miyake ,  Hideaki Kuwabara

IPC分类号： H01L29/10

CPC分类号： H01L27/124 ,  H01L27/1214 ,  H01L27/1225 ,  H01L27/1262 ,  H01L29/45 ,  H01L29/78606 ,  H01L29/7869

摘要： An object is to reduce the manufacturing cost of a semiconductor device. An object is to improve the aperture ratio of a semiconductor device. An object is to make a display portion of a semiconductor device display a higher-definition image. An object is to provide a semiconductor device which can be operated at high speed. The semiconductor device includes a driver circuit portion and a display portion over one substrate. The driver circuit portion includes: a driver circuit TFT in which source and drain electrodes are formed using a metal and a channel layer is formed using an oxide semiconductor; and a driver circuit wiring formed using a metal. The display portion includes: a pixel TFT in which source and drain electrodes are formed using an oxide conductor and a semiconductor layer is formed using an oxide semiconductor; and a display wiring formed using an oxide conductor.

摘要翻译： 目的是降低半导体器件的制造成本。 目的是提高半导体器件的开口率。 目的是使半导体器件的显示部分显示更高清晰度的图像。 目的在于提供一种可以高速运转的半导体装置。 该半导体器件包括一个基板上的驱动电路部分和显示部分。 驱动器电路部分包括：使用金属形成源电极和漏极的驱动电路TFT，并且使用氧化物半导体形成沟道层; 以及使用金属形成的驱动电路布线。 显示部分包括：使用氧化物导体形成源极和漏极的像素TFT，并且使用氧化物半导体形成半导体层; 以及使用氧化物导体形成的显示布线。

公开(公告)号：US08643030B2

公开(公告)日：2014-02-04

申请号：US13239716

申请日：2011-09-22

申请人： Shunpei Yamazaki ,  Junichiro Sakata ,  Kaoru Tsuchiya

发明人： Shunpei Yamazaki ,  Junichiro Sakata ,  Kaoru Tsuchiya

IPC分类号： H01L29/18

CPC分类号： H01L27/3246 ,  H01L27/3244 ,  H01L27/3248 ,  H01L27/3258 ,  H01L27/3281 ,  H01L27/3283 ,  H01L27/3288 ,  H01L51/52 ,  H01L51/5206 ,  H01L51/5234 ,  H01L51/5253 ,  H01L51/5262 ,  H01L2251/5323

摘要： It is an object of the present invention is to provide a light-emitting device in which high luminance can be obtained with low power consumption by improving the extraction efficiency. A light-emitting device of the invention comprises an insulating film, a plurality of first electrodes being in contact with the insulating film and formed on the insulating film to be in parallel, an electroluminescent layer formed over the plurality of first electrodes, and a plurality of second electrodes intersecting with the plurality of first electrodes and formed over the electroluminescent layer in parallel, wherein the insulating film contains nitrogen and silicon and the first electrodes contain a conductive transparent oxide material and silicon oxide.

公开(公告)号：US08629441B2

公开(公告)日：2014-01-14

申请号：US12848389

申请日：2010-08-02

申请人： Shunpei Yamazaki ,  Junichiro Sakata ,  Miyuki Hosoba ,  Tatsuya Takahashi

发明人： Shunpei Yamazaki ,  Junichiro Sakata ,  Miyuki Hosoba ,  Tatsuya Takahashi

IPC分类号： H01L29/10

CPC分类号： H01L27/3262 ,  H01L27/1222 ,  H01L27/1225 ,  H01L27/124 ,  H01L27/1255 ,  H01L27/32 ,  H01L27/3248 ,  H01L29/45

摘要： The semiconductor device includes a driver circuit including a first thin film transistor and a pixel including a second thin film transistor over one substrate. The first thin film transistor includes a first gate electrode layer, a gate insulating layer, a first oxide semiconductor layer, a first oxide conductive layer, a second oxide conductive layer, an oxide insulating layer which is in contact with part of the first oxide semiconductor layer and which is in contact with peripheries and side surfaces of the first and second oxide conductive layers, a first source electrode layer, and a first drain electrode layer. The second thin film transistor includes a second gate electrode layer, a second oxide semiconductor layer, and a second source electrode layer and a second drain electrode layer each formed using a light-transmitting material.

摘要翻译： 半导体器件包括驱动电路，该驱动电路包括第一薄膜晶体管和在一个衬底上包括第二薄膜晶体管的像素。 第一薄膜晶体管包括第一栅极电极层，栅极绝缘层，第一氧化物半导体层，第一氧化物导电层，第二氧化物导电层，与第一氧化物半导体的一部分接触的氧化物绝缘层 并且与第一和第二氧化物导电层的周边和侧表面接触，第一源极电极层和第一漏极电极层。 第二薄膜晶体管包括使用透光材料形成的第二栅极电极层，第二氧化物半导体层以及第二源电极层和第二漏极电极层。

公开(公告)号：US08609478B2

公开(公告)日：2013-12-17

申请号：US12826007

申请日：2010-06-29

申请人： Toshinari Sasaki ,  Junichiro Sakata ,  Hiroki Ohara ,  Shunpei Yamazaki

发明人： Toshinari Sasaki ,  Junichiro Sakata ,  Hiroki Ohara ,  Shunpei Yamazaki

IPC分类号： H01L21/84

CPC分类号： H01L21/02664 ,  H01L21/02565 ,  H01L27/1225 ,  H01L29/66969 ,  H01L29/78606 ,  H01L29/78618 ,  H01L29/7869

摘要： It is an object to provide a highly reliable semiconductor device which includes a thin film transistor having stable electric characteristics. It is another object to manufacture a highly reliable semiconductor device at lower cost with high productivity. In a method for manufacturing a semiconductor device which includes a thin film transistor where a semiconductor layer including a channel formation region using an oxide semiconductor layer, a source region, and a drain region are formed using an oxide semiconductor layer, heat treatment for reducing impurities such as moisture (heat treatment for dehydration or dehydrogenation) is performed so as to improve the purity of the oxide semiconductor layer.

摘要翻译： 本发明的目的是提供一种高度可靠的半导体器件，其包括具有稳定电特性的薄膜晶体管。 另一个目的是以更高的生产率以更低的成本制造高可靠性的半导体器件。 在制造半导体器件的方法中，该半导体器件包括薄膜晶体管，其中使用氧化物半导体层形成包括使用氧化物半导体层的沟道形成区域，源极区域和漏极区域的半导体层，用于减少杂质的热处理 例如水分（用于脱水或脱氢的热处理）以提高氧化物半导体层的纯度。

公开(公告)号：US08526795B2

公开(公告)日：2013-09-03

申请号：US11495573

申请日：2006-07-31

申请人： Makoto Kawasaki ,  Hideo Tsukazaki ,  Takashi Kinouchi ,  Susumu Takatsuka ,  Junichiro Sakata

发明人： Makoto Kawasaki ,  Hideo Tsukazaki ,  Takashi Kinouchi ,  Susumu Takatsuka ,  Junichiro Sakata

IPC分类号： H04N9/80

CPC分类号： G06F17/30775 ,  G06F17/30017 ,  G06F17/30749 ,  G06F17/30772

摘要： Disclosed herein is an information-processing apparatus including an event-log acquisition section acquiring an event log provided by a content reproduction apparatus capable of reproducing a content as an event log including at least information identifying the content and information indicating a reproduction start date/time and reproduction end date/time of the content, an event-log analysis section deriving a reproduction start date/time and reproduction end date/time of a content reproduced by the content reproduction apparatus from the event log, a playlist generation section generating a playlist, which is to serve as a set of pieces of information each used for identifying a content reproduced during a specific period of time, on the basis of the reproduction start date/time and reproduction end date/time of the content, and a playlist transfer section transmitting the playlist to the content reproduction apparatus.

摘要翻译： 这里公开了一种信息处理装置，包括事件日志获取部分，其获取由能够再现内容的内容再现装置提供的事件日志，该事件日志至少包括识别内容的信息和指示再现开始日期/时间的信息 内容的再现结束日期/时间，从事件日志导出由内容再现装置再现的内容的再现开始日期/时间和再现结束日期/时间的事件日志分析部分，生成播放列表的播放列表生成部分 ，其用作基于内容的再现开始日期/时间和再现结束日期/时间的用于识别在特定时间段内再现的内容的一组信息，以及播放列表传送 将播放列表发送到内容再现装置。

公开(公告)号：US08518761B2

公开(公告)日：2013-08-27

申请号：US13085518

申请日：2011-04-13

申请人： Shunpei Yamazaki ,  Junichiro Sakata ,  Makoto Furuno

发明人： Shunpei Yamazaki ,  Junichiro Sakata ,  Makoto Furuno

IPC分类号： H01L21/00

CPC分类号： H01L21/02266 ,  C23C14/0036 ,  C23C14/08 ,  C23C14/3407 ,  C23C14/3414 ,  H01L21/02112 ,  H01L21/8232 ,  H01L27/0688 ,  H01L27/11521 ,  H01L27/11551 ,  H01L27/1156 ,  H01L27/1207 ,  H01L27/1225 ,  H01L27/1251 ,  H01L28/60 ,  H01L29/4908 ,  H01L29/66477 ,  H01L29/66742 ,  H01L29/66969 ,  H01L29/78645 ,  H01L29/7869

摘要： An object is to provide a deposition method in which a gallium oxide film is formed by a DC sputtering method. Another object is to provide a method for manufacturing a semiconductor device using a gallium oxide film as an insulating layer such as a gate insulating layer of a transistor. An insulating film is formed by a DC sputtering method or a pulsed DC sputtering method, using an oxide target including gallium oxide (also referred to as GaOX). The oxide target includes GaOX, and X is less than 1.5, preferably more than or equal to 0.01 and less than or equal to 0.5, further preferably more than or equal to 0.1 and less than or equal to 0.2. The oxide target has conductivity, and sputtering is performed in an oxygen gas atmosphere or a mixed atmosphere of an oxygen gas and a rare gas such as argon.