公开(公告)号：US07879731B2

公开(公告)日：2011-02-01

申请号：US11733764

申请日：2007-04-11

申请人： Kenneth S. Collins ,  Hiroji Hanawa ,  Kartik Ramaswamy ,  Douglas A. Buchberger, Jr. ,  Shahid Rauf ,  Kallol Bera ,  Lawrence Wong ,  Walter R. Merry ,  Matthew L. Miller ,  Steven C. Shannon ,  Andrew Nguyen ,  James P. Cruse ,  James Carducci ,  Troy S. Detrick ,  Subhash Deshmukh ,  Jennifer Y. Sun

发明人： Kenneth S. Collins ,  Hiroji Hanawa ,  Kartik Ramaswamy ,  Douglas A. Buchberger, Jr. ,  Shahid Rauf ,  Kallol Bera ,  Lawrence Wong ,  Walter R. Merry ,  Matthew L. Miller ,  Steven C. Shannon ,  Andrew Nguyen ,  James P. Cruse ,  James Carducci ,  Troy S. Detrick ,  Subhash Deshmukh ,  Jennifer Y. Sun

IPC分类号： H01L21/302

CPC分类号： H01J37/32174 ,  H01J37/32091 ,  H01J37/32165

摘要： A method is provided for processing a workpiece in a plasma reactor chamber having electrodes including at least a ceiling electrode and a workpiece support electrode. The method includes coupling respective RF power sources of respective VHF frequencies f1 and f2 to either (a) respective ones of the electrodes or (b) a common one of the electrodes, where f1 is sufficiently high to produce a center-high non-uniform plasma ion distribution and f2 is sufficiently low to produce a center-low non-uniform plasma ion distribution. The method further includes adjusting a ratio of an RF parameter at the f1 frequency to the RF parameter at the f2 frequency so as to control plasma ion density distribution, the RF parameter being any one of RF power, RF voltage or RF current.

摘要翻译： 提供了一种用于处理具有至少包括天花板电极和工件支撑电极的电极的等离子体反应器室中的工件的方法。 该方法包括将相应的VHF频率f1和f2的相应RF功率源耦合到（a）电极中的相应电极或（b）共同的一个电极，其中f1足够高以产生中心高的不均匀 等离子体离子分布和f2足够低以产生中心 - 低不均匀的等离子体离子分布。 该方法还包括调整f1频率处的RF参数与f2频率处的RF参数的比率，以便控制等离子体离子密度分布，RF参数是RF功率，RF电压或RF电流中的任何一个。

公开(公告)号：US20080180028A1

公开(公告)日：2008-07-31

申请号：US11733770

申请日：2007-04-11

申请人： Kenneth S. Collins ,  Hiroji Hanawa ,  Kartik Ramaswamy ,  Douglas A. Buchberger ,  Shahid Rauf ,  Kallol Bera ,  Lawrence Wong ,  Walter R. Merry ,  Matthew L. Miller ,  Steven C. Shannon ,  Andrew Nguyen ,  James P. Cruse ,  James Carducci ,  Troy S. Detrick ,  Subhash Deshmukh ,  Jennifer Y. Sun

发明人： Kenneth S. Collins ,  Hiroji Hanawa ,  Kartik Ramaswamy ,  Douglas A. Buchberger ,  Shahid Rauf ,  Kallol Bera ,  Lawrence Wong ,  Walter R. Merry ,  Matthew L. Miller ,  Steven C. Shannon ,  Andrew Nguyen ,  James P. Cruse ,  James Carducci ,  Troy S. Detrick ,  Subhash Deshmukh ,  Jennifer Y. Sun

IPC分类号： H01J7/00

CPC分类号： C23C16/45574 ,  C23C16/5096 ,  H01J37/32091 ,  H01J37/32165 ,  H01J37/32174 ,  H01L21/67069 ,  H01L21/6831

摘要： A method is provided for processing a workpiece in a plasma reactor chamber. The method includes coupling, to a plasma in the chamber, power of an RF frequency via a ceiling electrode and coupling, to the plasma, power of at least approximately the same RF frequency via a workpiece support electrode. The method also includes providing an edge ground return path. The method further includes adjusting the proportion between (a) current flow between said electrodes and (b) current flow to the edge ground return path from said electrodes, to control plasma ion density distribution uniformity over the workpiece.

摘要翻译： 提供了一种用于在等离子体反应器室中处理工件的方法。 该方法包括通过天线电极将等离子体耦合到腔室中的等离子体，并通过工件支撑电极将等离子体的功率耦合到至少近似相同的RF频率。 该方法还包括提供边缘接地返回路径。 该方法还包括调节（a）所述电极之间的电流之间的比例和（b）从所述电极到达边缘接地返回路径的电流，以控制工件上的等离子体离子密度分布均匀性。

公开(公告)号：US20080110567A1

公开(公告)日：2008-05-15

申请号：US11751575

申请日：2007-05-21

申请人： Matthew L. Miller ,  Daniel J. Hoffman ,  Steven C. Shannon ,  Michael Kutney ,  James Carducci ,  Andrew Nguyen

发明人： Matthew L. Miller ,  Daniel J. Hoffman ,  Steven C. Shannon ,  Michael Kutney ,  James Carducci ,  Andrew Nguyen

IPC分类号： H01L21/306

CPC分类号： H01J37/32633 ,  H01J37/3244 ,  H01J37/32449

摘要： A plasma reactor with plasma confinement and plasma radial distribution capability. The reactor comprises a reactor chamber including a side wall and a workpiece support pedestal in the chamber and defining a pumping annulus between the pedestal and side wall and a pumping port at a bottom of the pumping annulus. The reactor further comprises a means for confining gas flow in an axial direction through the pumping annulus to prevent plasma from flowing to the pumping port. The reactor further comprises a means for compensating for asymmetry of gas flow pattern across the pedestal arising from placement of the pumping port. The reactor further comprises a means for controlling plasma distribution having an inherent tendency to promote edge-high plasma density distribution. The means for confining gas flow is depressed below the workpiece support sufficiently to compensate for the edge-high plasma distribution tendency of the means for controlling plasma distribution.

摘要翻译： 一种具有等离子体约束和等离子体径向分布能力的等离子体反应器。 该反应器包括反应室，该反应室包括室中的侧壁和工件支撑基座，并且在基座和侧壁之间限定了泵送环形空间以及在泵送环空的底部的泵送端口。 反应器还包括用于将气流沿轴向限制通过泵送环的装置，以防止等离子体流到泵送端口。 所述反应器还包括用于补偿穿过所述基座的由所述泵送端口的放置产生的气流图案的不对称性的装置。 反应器还包括用于控制具有促进边缘 - 高等离子体密度分布的固有倾向的等离子体分布的装置。 用于限制气流的装置在工件支撑下方被压下，足以补偿用于控制等离子体分布的装置的边缘 - 高等离子体分布趋势。

公开(公告)号：US20080110860A1

公开(公告)日：2008-05-15

申请号：US11751592

申请日：2007-05-21

申请人： Matthew L. Miller ,  Daniel J. Hoffman ,  Steven C. Shannon ,  Michael Kutney ,  James Carducci ,  Andrew Nguyen

发明人： Matthew L. Miller ,  Daniel J. Hoffman ,  Steven C. Shannon ,  Michael Kutney ,  James Carducci ,  Andrew Nguyen

IPC分类号： H01L21/302

CPC分类号： H01J37/3266 ,  H01J37/32623 ,  H01J37/32633 ,  H01J37/32697

摘要： A method for processing a workpiece in a plasma reactor. The method comprises constraining plasma in the chamber away from the floor of the pumping annulus, providing an annular baffle while compensating for asymmetry of gas flow attributable to the pumping port, and providing a gas flow equalizer below the baffle having an eccentrically shaped opening. The method further includes modifying the radial distribution of plasma ion density and providing a magnetic plasma steering field having an edge high plasma ion density distribution tendency. The method further comprises locating the baffle at a sufficient distance below the workpiece to provide an edge low plasma ion density distribution tendency that compensates the edge high plasma ion density distribution tendency of the magnetic plasma steering field.

摘要翻译： 一种在等离子体反应器中处理工件的方法。 该方法包括将腔室中的等离子体约束在泵送环空的地板之外，提供环形挡板，同时补偿归因于泵送端口的气流的不对称性，以及在挡板下方提供具有偏心形状的开口的气流均衡器。 该方法还包括修改等离子体离子密度的径向分布并提供具有边缘高等离子体离子密度分布倾向的磁等离子体转向场。 该方法还包括将挡板定位在工件下方足够的距离处，以提供补偿磁等离子体转向场的边缘高等离子体离子密度分布趋势的边缘低等离子体离子密度分布趋势。

公开(公告)号：US07780866B2

公开(公告)日：2010-08-24

申请号：US11751592

申请日：2007-05-21

申请人： Matthew L. Miller ,  Daniel J. Hoffman ,  Steven C. Shannon ,  Michael Kutney ,  James Carducci ,  Andrew Nguyen

发明人： Matthew L. Miller ,  Daniel J. Hoffman ,  Steven C. Shannon ,  Michael Kutney ,  James Carducci ,  Andrew Nguyen

IPC分类号： B44C1/22 ,  C03C15/00 ,  C03C25/68 ,  C23F1/00

CPC分类号： H01J37/3266 ,  H01J37/32623 ,  H01J37/32633 ,  H01J37/32697

摘要： A method for processing a workpiece in a plasma reactor. The method comprises constraining plasma in the chamber away from the floor of the pumping annulus, providing an annular baffle while compensating for asymmetry of gas flow attributable to the pumping port, and providing a gas flow equalizer below the baffle having an eccentrically shaped opening. The method further includes modifying the radial distribution of plasma ion density and providing a magnetic plasma steering field having an edge high plasma ion density distribution tendency. The method further comprises locating the baffle at a sufficient distance below the workpiece to provide an edge low plasma ion density distribution tendency that compensates the edge high plasma ion density distribution tendency of the magnetic plasma steering field.

摘要翻译： 一种在等离子体反应器中处理工件的方法。 该方法包括将腔室中的等离子体约束在泵送环空的地板之外，提供环形挡板，同时补偿归因于泵送端口的气流的不对称性，以及在挡板下方提供具有偏心形状的开口的气流均衡器。 该方法还包括修改等离子体离子密度的径向分布并提供具有边缘高等离子体离子密度分布倾向的磁等离子体转向场。 该方法还包括将挡板定位在工件下方足够的距离处，以提供补偿磁等离子体转向场的边缘高等离子体离子密度分布趋势的边缘低等离子体离子密度分布趋势。

公开(公告)号：US07196283B2

公开(公告)日：2007-03-27

申请号：US11046538

申请日：2005-01-28

申请人： Douglas A. Buchberger, Jr. ,  Daniel J. Hoffman ,  Olga Regelman ,  James Carducci ,  Keiji Horioka ,  Jang Gyoo Yang

发明人： Douglas A. Buchberger, Jr. ,  Daniel J. Hoffman ,  Olga Regelman ,  James Carducci ,  Keiji Horioka ,  Jang Gyoo Yang

IPC分类号： B23K9/00

CPC分类号： H01J37/32091 ,  H01J37/32082 ,  H01J37/32174 ,  H01J37/32183 ,  H01J37/3244

摘要： An overhead gas distribution electrode forming at least a portion of the ceiling of a plasma reactor has a bottom surface facing a processing zone of the reactor. The electrode includes a gas supply manifold for receiving process gas at a supply pressure at a top portion of the electrode and plural pressure-dropping cylindrical orifices extending axially relative to the electrode from the gas supply manifold at one end of each the orifice. A radial gas distribution manifold within the electrode extends radially across the electrode. Plural axially extending high conductance gas flow passages couple the opposite ends of respective ones of the plural pressure-dropping orifices to the radial gas distribution manifold. Plural high conductance cylindrical gas outlet holes are formed in the plasma-facing bottom surface of the electrode and extend axially to the radial gas distribution manifold.

摘要翻译： 形成等离子体反应器的天花板的至少一部分的顶部气体分配电极具有面向反应器的处理区域的底面。 电极包括用于在电极顶部处的供给压力下接收处理气体的气体供应歧管和在每个孔口的一端处相对于来自气体供应歧管的电极轴向延伸的多个降压圆柱形孔。 电极内的径向气体分布歧管径向延伸穿过电极。 多个轴向延伸的高电导气流通道将多个降压孔中的相应端部的相对端连接到径向气体分配歧管。 在电极的等离子体面向底面中形成多个高电导圆柱形气体出口孔，并且轴向延伸到径向气体分配歧管。

公开(公告)号：US20050178748A1

公开(公告)日：2005-08-18

申请号：US11046538

申请日：2005-01-28

申请人： Douglas Buchberger ,  Daniel Hoffman ,  Olga Regelman ,  James Carducci ,  Keiji Horioka ,  Jang Yang

发明人： Douglas Buchberger ,  Daniel Hoffman ,  Olga Regelman ,  James Carducci ,  Keiji Horioka ,  Jang Yang

IPC分类号： H01J37/32 ,  B23K9/00

CPC分类号： H01J37/32091 ,  H01J37/32082 ,  H01J37/32174 ,  H01J37/32183 ,  H01J37/3244

摘要： An overhead gas distribution electrode forming at least a portion of the ceiling of a plasma reactor has a bottom surface facing a processing zone of the reactor. The electrode includes a gas supply manifold for receiving process gas at a supply pressure at a top portion of the electrode and plural pressure-dropping cylindrical orifices extending axially relative to the electrode from the gas supply manifold at one end of each the orifice. A radial gas distribution manifold within the electrode extends radially across the electrode. Plural axially extending high conductance gas flow passages couple the opposite ends of respective ones of the plural pressure-dropping orifices to the radial gas distribution manifold. Plural high conductance cylindrical gas outlet holes are formed in the plasma-facing bottom surface of the electrode and extend axially to the radial gas distribution manifold.

摘要翻译： 形成等离子体反应器的天花板的至少一部分的顶部气体分配电极具有面向反应器的处理区域的底面。 电极包括用于在电极顶部处的供给压力下接收处理气体的气体供应歧管和在每个孔口的一端处相对于来自气体供应歧管的电极轴向延伸的多个降压圆柱形孔。 电极内的径向气体分布歧管径向延伸穿过电极。 多个轴向延伸的高电导气流通道将多个降压孔中的相应端部的相对端连接到径向气体分配歧管。 在电极的等离子体面向底面中形成多个高电导圆柱形气体出口孔，并且轴向延伸到径向气体分配歧管。

公开(公告)号：US20070091535A1

公开(公告)日：2007-04-26

申请号：US11561112

申请日：2006-11-17

申请人： Hamid Noorbakhsh ,  Siamak Salimian ,  Paul Luscher ,  James Carducci ,  Evans Lee ,  Kaushik Vaidya ,  Hongqing Shan ,  Michael Welch

发明人： Hamid Noorbakhsh ,  Siamak Salimian ,  Paul Luscher ,  James Carducci ,  Evans Lee ,  Kaushik Vaidya ,  Hongqing Shan ,  Michael Welch

IPC分类号： H01H47/26 ,  H01H47/32 ,  H01H50/12

CPC分类号： C23C16/45563 ,  C23C16/4401 ,  C23C16/4411 ,  H01J37/32522 ,  H01J37/32623 ,  H01J37/32633 ,  H01J2237/2001

摘要： A thermally controlled chamber liner comprising a passage having an inlet and outlet adapted to flow a fluid through the one or more fluid passages formed at least partially therein. The chamber liner may comprise a first liner, a second liner or both a first liner and a second liner. The thermally controlled chamber liner maintains a predetermined temperature by running fluid from a temperature controlled, fluid source through the fluid passages. By maintaining a predetermined temperature, deposition of films on the chamber liner is discouraged and particulate generation due to stress cracking of deposited films is minimized.

摘要翻译： 一种热控腔室衬套，其包括具有入口和出口的通道，其适于使流体流过至少部分地形成在其中的一个或多个流体通道。 腔室衬套可以包括第一衬垫，第二衬垫或第一衬垫和第二衬垫两者。 热控腔室衬里通过将流体从温度受控的流体源流过流体通道来维持预定的温度。 通过保持预定的温度，阻止膜在室衬里上的沉积，并且由于沉积膜的应力开裂引起的颗粒的产生被最小化。

公开(公告)号：US20050003675A1

公开(公告)日：2005-01-06

申请号：US10863590

申请日：2004-06-07

申请人： James Carducci ,  Hamid Noorbakhsh ,  Evans Lee ,  Bryan Pu ,  Hongqing Shan ,  Claes Bjorkman ,  Siamak Salimian ,  Paul Luscher ,  Michael Welch

发明人： James Carducci ,  Hamid Noorbakhsh ,  Evans Lee ,  Bryan Pu ,  Hongqing Shan ,  Claes Bjorkman ,  Siamak Salimian ,  Paul Luscher ,  Michael Welch

IPC分类号： H01J37/32 ,  H01L21/00 ,  H01L21/311 ,  H01L21/60 ,  H01L21/683 ,  H01L21/687 ,  H01L21/768 ,  C23F1/00

CPC分类号： H01L21/6875 ,  H01J37/32522 ,  H01L21/31116 ,  H01L21/67069 ,  H01L21/6833 ,  H01L21/68757 ,  H01L21/68785 ,  H01L21/68792 ,  H01L21/76802 ,  H01L21/76807 ,  H01L21/76897 ,  H01L2924/3011

摘要： A capacitively coupled reactor for plasma etch processing of substrates at subatmospheric pressures includes a chamber body defining a processing volume, a lid provided upon the chamber body, the lid being a first electrode, a substrate support provided in the processing volume and comprising a second electrode, a radio frequency source coupled at least to one of the first and second electrodes, a process gas inlet configured to deliver process gas into the processing volume, and an evacuation pump system having pumping capacity of at least 1600 liters/minute. The greater pumping capacity controls residency time of the process gases so as to regulate the degree of dissociation into more reactive species.

摘要翻译： 一种用于在低于大气压的衬底的等离子体蚀刻处理的电容耦合反应器包括限定处理容积的室主体，设置在室主体上的盖，盖是第一电极，设置在处理容积中的衬底支撑件，并且包括第二电极 耦合到所述第一和第二电极中的至少一个电极的射频源，配置成将处理气体输送到所述处理容积中的处理气体入口，以及具有至少1600升/分钟的抽运能力的抽空泵系统。 较大的泵送能力控制工艺气体的停留时间，以便调节分解成更具反应活性的物质的程度。

公开(公告)号：US20050173569A1

公开(公告)日：2005-08-11

申请号：US10772787

申请日：2004-02-05

申请人： Hamid Noorbakhsh ,  James Carducci ,  Jennifer Sun ,  Larry Elizaga

发明人： Hamid Noorbakhsh ,  James Carducci ,  Jennifer Sun ,  Larry Elizaga

IPC分类号： A01G27/00 ,  B05B5/00 ,  C23C16/455 ,  F23D11/32

CPC分类号： C23C16/45565

摘要： We have developed a gas distribution showerhead assembly, for use in a semiconductor processing chamber, which can be easily cleaned, with minimal chamber downtime. The gas distribution showerhead assembly includes an electrode having openings therethrough, and a gas distribution plate which includes a plurality of through-holes for delivering processing gases into the semiconductor processing chamber. The gas distribution plate is bonded to a first, lower major surface of the electrode. A removable insert which fits into an opening in the electrode through which gas flows. Spacing between surfaces of the removable insert and surfaces of the electrode is adequate to permit gas flow, but inadequate for plasma ignition within the opening. The removable insert can be easily removed during cleaning of the gas distribution showerhead, permitting the holes in the gas distribution plate to be easily accessed from both sides of the gas distribution plate.

摘要翻译： 我们开发了一种用于半导体处理室的气体分配喷头组件，可以轻松清洁，并具有最小的室停机时间。 气体分配喷头组件包括具有开口的电极，以及气体分配板，其包括用于将处理气体输送到半导体处理室中的多个通孔。 气体分配板结合到电极的第一下表面。 可拆卸的插入件，其装配在气体流过的电极的开口中。 可拆卸插入件的表面与电极表面之间的间距足以允许气体流动，但不足以在开口内等离子体点火。 在清洁气体分配喷头时可以容易地移除可移除的插入物，从而容易从气体分配板的两侧接近气体分配板中的孔。