公开(公告)号：US20210089233A1

公开(公告)日：2021-03-25

申请号：US16816439

申请日：2020-03-12

Applicant: Kioxia Corporation

Inventor： Yoshihiro UEDA ,  Naomi TAKEDA ,  Masanobu SHIRAKAWA ,  Marie TAKADA

IPC: G06F3/06 ,  G06F11/10 ,  G06F12/10

Abstract: According to one embodiment, a storage device includes a nonvolatile memory and a control circuit. The nonvolatile memory includes a plurality of storage blocks, each including a shift register. The control circuit controls writing and reading of data to and from the nonvolatile memory. The control circuit is configured to: read target data from a first storage block of the plurality of storage blocks; and write the target data read from the first storage block to a second storage block of the plurality of storage blocks, the second storage block being different from the first storage block.