Abstract:
Methods and systems for identifying outliers in multiple instances of a pattern of interest (POI) are provided. One system includes one or more computer subsystems configured for acquiring images generated by an imaging subsystem at multiple instances of a POI within a die formed on the specimen. The multiple instances include two or more instances that are located at aperiodic locations within the die. The computer subsystem(s) are also configured for determining a feature of each of the images generated at the multiple instances of the POI. In addition, the computer subsystem(s) are configured for identifying one or more outliers in the multiple instances of the POI based on the determined features.
Abstract:
Methods and systems for adaptive sampling for semiconductor inspection recipe creation, defect review, and metrology are provided. The embodiments provide image processing and pattern recognition algorithms and an adaptive sampling method for extracting critical areas from SEM image patches for use in a wafer inspection system when design data for a semiconductor chip is not available. The embodiments also provide image processing and pattern recognition algorithms for efficiently discovering critical defects and significant deviations in the normal manufacturing process, using the output from a wafer inspection system and an adaptive sampling method to select wafer locations to be examined on a high resolution review or metrology tool.