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公开(公告)号：US20190391099A1
公开(公告)日：2019-12-26
申请号：US15759214
申请日：2018-01-16
Inventor： Hee-Tae JUNG , Seon Joon KIM , Hyeong-Jun KOH , Yury GOGOTSI
IPC: G01N27/12 , G01N27/407
Abstract: This invention relates to a chemiresistor gas sensor using MXene and a method of manufacturing the same, wherein the chemiresistor gas sensor, manufactured in a manner in which a Ti3C2Tx MXene thin film is formed and transferred onto a sensor substrate, can exhibit good response and sensitivity.
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