摘要:
A halftone phase shift mask blank has a phase shifter film on a transparent substrate. The phase shifter film is composed of a metal silicide compound containing Mo, at least one metal selected from Ta, Zr, Cr and W, and at least one element selected from O, N and C. The halftone phase shift mask blank has improved processability and high resistance to chemicals, especially to alkaline chemicals.
摘要:
For the manufacture of a halftone phase shift mask blank comprising a transparent substrate and a translucent film of one or more layers having a controlled phase and transmittance, at least one layer of the translucent film comprising Si, Mo and Zr at the same time, a target comprising at least Zr and Mo in a molar ratio Zr/Mo between 0.05 and 5 is useful.
摘要:
Silicon-containing polymers comprising recurring units of formula (1) are novel wherein R1 is a single bond or alkylene, R2 is hydrogen or alkyl, R3, R4 and R5 are alkyl, haloalkyl, aryl or silicon-containing group, R6 is hydrogen, methyl, cyano or —C(═O)OR8 wherein R8 is hydrogen, alkyl or acid labile group, R7 is alkyl, —NR9R10 or —OR11 wherein R9, R10 and R11 are hydrogen or alkyl, a and b are positive numbers satisfying 0
摘要:
A resist composition is provided comprising a fluorochemical surfactant which functions to reduce the contact angle of a coating of the resist composition with water or an aqueous base developer as the amount of the fluorochemical surfactant increases. The resist composition forms a coating having a thickness uniformity, free of defects, and wettable with an aqueous base developer when applied onto a substrate, and has a good storage stability in that particles do not increase during storage in solution form.
摘要:
Polymers comprising recurring units of formula (1) are provided wherein R1 is a straight, branched or cyclic divalent C1-20 hydrocarbon group or a bridged cyclic hydrocarbon group, R is hydrogen atom or an acid labile group, 0≦m≦3, 0≦n≦3 and 0≦m+n≦6. Using the polymers, chemical amplification positive resist compositions featuring low absorption of F2 excimer laser light are obtained.
摘要翻译:提供了包含式(1)的重复单元的聚合物,其中R 1是直链,支链或环状二价C 1-20烃基或桥连环烃基,R是氢原子或酸不稳定基团,0≤m <= 3,0 <= n <= 3,0 <= m + n <= 6。使用聚合物,获得具有F2受激准分子激光的低吸收性的化学放大阳性抗蚀剂组合物。
摘要:
A resist composition comprising a dendritic or hyperbranched polymer of a phenol derivative having a weight average molecular weight of 500-10,000,000 has an excellent resolution, reduced line edge roughness, and dry etching resistance and is useful as a chemical amplification type resist composition which may be either positive or negative working.
摘要:
A dendritic or hyperbranched polymer having a weight average molecular weight of 500-10,000,000 is prepared by polymerizing a hydroxystyrene derivative, adding a branching monomer midway in the polymerization step to introduce branch chains, and repeating the polymerizing and branching steps. The polymer is advantageously used as the base resin of resist material because the size of the polymer can be reduced while maintaining strength.
摘要:
A polymer comprising recurring units of formula (1) is provided wherein some of the hydrogen atoms of phenolic hydroxyl groups and/or alcoholic hydroxyl groups are replaced by acid labile groups. The polymer is crosslinked within a molecule and/or between molecules with a crosslinking group having a C--O--C linkage resulting from reaction of some of the remaining phenolic hydroxyl groups and/or alcoholic hydroxyl groups with an alkenyl ether compound or halogenated alkyl ether compound. The amount of the acid labile group and the crosslinking group combined is on the average from more than 0 mol % to 80 mol % of the entirety of the phenolic hydroxyl group and alcoholic hydroxyl group. The polymer has Mw of 1,000-500,000. ##STR1## R.sup.1 is H or methyl, R.sup.2 is C.sub.1 -C.sub.8 alkyl, letter x is 0 or a positive integer, y is a positive integer, x+y.ltoreq.5, letters p and q are positive numbers satisfying p+q=1 and 0
摘要:
An organometallic compound represented by the general formula (I) ##STR1## or the general formula (II)R-M.sup.2 -R (II)is evaporated, and then passed through the inner tube of a heat exchanger to be precipitated. The heat exchanger is then heated to re-evaporate the organometallic compound, and the re-evaporated organometallic compound is then precipitated in a filling container which is connected to said heat exchanger and cooled down to a prescribed temperature to fill the container.