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公开(公告)号：US06402821B1
公开(公告)日：2002-06-11
申请号：US09694981
申请日：2000-10-24
申请人： Yuji Matsuyama
发明人： Yuji Matsuyama
IPC分类号： B01D1900
CPC分类号： B01D19/0031 , B01D19/0005
摘要： Nitrogen gas is blown into a developing solution tank, and a developing solution is supplied through a supply nozzle to the surface of a wafer, through a filter unit or the like, with the pressure. The filter unit has a ring-shaped flow path flowing from down upward, an impurity filter provided on the inside thereof, an exhaust passage connected to an uppermost portion of the flow path, and a bubble filter composed of, for example, a hollow fiber membrane, which is provided to block a part of the exhaust passage and has the property of transmitting gas without transmitting liquid. The dissolved nitrogen contained in the developing solution is changed to bubbles by vaporizing in the flow path, and only the bubbles can be removed from the developing solution since the aforesaid bubble filter selectively transmits these bubbles whereby the amount of the developing solution can be saved. Accordingly, it is possible to remove the bubbles contained in a treatment solution while reducing consumption of the treatment solution.
摘要翻译： 将氮气吹入显影液槽中，通过供给喷嘴将显影液通过过滤器单元等与压力一起供给到晶片的表面。 过滤器单元具有从下向上流动的环状流路，设置在其内部的杂质过滤器，连接到流路的最上部的排气通路，以及由例如中空纤维 膜，其被设置成阻挡排气通道的一部分，并且具有在不传输液体的情况下传输气体的性质。 由于上述气泡过滤器选择性地透过这些气泡，所以显影液中含有的溶解的氮气通过在流路中蒸发而变为气泡，并且只能从显影液中除去气泡，由此可以节省显影液的量。 因此，可以减少处理溶液中含有的气泡，同时降低处理溶液的消耗。
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公开(公告)号：US06261365B1
公开(公告)日：2001-07-17
申请号：US09272782
申请日：1999-03-19
IPC分类号： B05C502
CPC分类号： H01L21/67748 , H01L21/67103 , H01L21/67109 , H01L21/67178
摘要： When a substrate coated with a coating solution which oxidizes at high temperatures is heat-treated, an oxygen concentration of a treatment atmosphere is lowered when the temperature is low. Next, the substrate is heat-treated in the treatment atmosphere of which the oxygen concentration is lowered. Sequentially, the treatment atmosphere is returned to that with the original oxygen concentration after the passage of a predetermined time after completing the heat treatment. Thereby, the substrate can be heat-treated, with the oxidization of the coating solution being controlled.
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公开(公告)号：US5958145A
公开(公告)日：1999-09-28
申请号：US26912
申请日：1998-02-20
申请人： Akira Yonemizu , Yuji Matsuyama
发明人： Akira Yonemizu , Yuji Matsuyama
IPC分类号： H01L21/304 , B08B1/04 , B08B7/00 , H01L21/00 , B08B3/00
CPC分类号： H01L21/67028 , B08B1/007 , B08B1/04 , B08B7/0057 , Y10S134/902
摘要： A method for washing both surfaces of a substrate, comprising (a) a first washing step for washing a front surface of a substrate, which is kept rotated, by bringing a scrubbing member into contact with said front surface of the substrate while supplying a washing liquid onto the front surface, (b) a second washing step for washing a back surface of the substrate, which is kept rotated, by bringing a scrubbing member into contact with said back surface of the substrate while supplying a washing liquid onto the back surface, (c) a heating step for drying under heat the wet surfaces of the substrate, (d) a recipe determining step for determining whether said heating step (c) is performed at a period between said first washing step (a) and second washing step (b) and at a period after the second washing step (b), whether the heating step (c) is performed only once after the second washing step (b), or whether the heating step (c) is not performed, and (e) a conducting step for performing or not performing the heating step (C) in accordance with the recipe determined in said recipe determining step (d).
摘要翻译： 一种用于洗涤基材的两个表面的方法，包括：（a）第一洗涤步骤，用于洗涤保持旋转的基材的前表面，通过使洗涤部件与所述基材的所述前表面接触，同时提供洗涤 液体到前表面上，（b）第二洗涤步骤，用于洗涤保持旋转的衬底的背面，通过使洗涤构件与衬底的所述背面接触，同时将洗涤液体供应到背面 （c）用于在加热下在基底的湿表面上干燥的加热步骤，（d）配方确定步骤，用于确定所述加热步骤（c）是否在所述第一洗涤步骤（a）和第二洗涤 步骤（b）和在第二洗涤步骤（b）之后的时间段，加热步骤（c）是否在第二洗涤步骤（b）之后仅进行一次，或者是否没有进行加热步骤（c），以及 （e）执行的导电步骤 或者根据在所述配方确定步骤（d）中确定的配方不执行加热步骤（C）。
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公开(公告)号：US07517217B2
公开(公告)日：2009-04-14
申请号：US11229555
申请日：2005-09-20
IPC分类号： F27D5/00
CPC分类号： H01L21/67109 , B05D3/0209 , B05D3/0254 , H01L21/67103
摘要： The present invention relates to a method for heat processing of a substrate having the step of baking a substrate, on which a coating film is formed, at a predetermined high temperature, comprising a first step of increasing the substrate from a predetermined low temperature to a predetermined intermediate temperature lower than a predetermined reaction temperature at which the coating film reacts, a second step of maintaining the substrate at the predetermined intermediate temperature for a predetermined period of time, and a third step of increasing the temperature of the substrate to the predetermined high temperature higher than the predetermined reaction temperature. By temporarily increasing the temperature of the substrate to the intermediate temperature lower than the reaction temperature, maintaining the substrate at this intermediate temperature for the predetermined period of time, and thereafter increasing the temperature of the substrate to the high temperature higher than the reaction temperature when the temperature of the substrate is increased, the temperature within the surface of the substrate can be made uniform when the temperature of the substrate reaches the reaction temperature. Consequently, a chemical reaction due to heat processing of the coating film within the surface of the substrate is performed uniformly.
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公开(公告)号：US07408199B2
公开(公告)日：2008-08-05
申请号：US10907398
申请日：2005-03-31
申请人： Yuji Matsuyama , Shinji Suzuki , Kousuke Ise , Atsuo Michiue , Akinori Yoneda
发明人： Yuji Matsuyama , Shinji Suzuki , Kousuke Ise , Atsuo Michiue , Akinori Yoneda
IPC分类号： H01L27/15
CPC分类号： B82Y20/00 , H01S5/0202 , H01S5/026 , H01S5/028 , H01S5/0425 , H01S5/1082 , H01S5/2009 , H01S5/2201 , H01S5/2214 , H01S5/2231 , H01S5/305 , H01S5/3054 , H01S5/3202 , H01S5/34333 , H01S2304/04 , H01S2304/12
摘要： A nitride semiconductor laser device comprises, on a principle face of a nitride semiconductor substrate: a nitride semiconductor layer having a first conductivity type; an active layer comprising indium, and a nitride semiconductor layer having a second conductivity type that is different from said first conductivity type, and on the surface of which is formed a stripe ridge; said principal face of said nitride semiconductor substrate having an off angle a (θa) with respect to a reference crystal plane, in at least a direction substantially parallel to said stripe ridge.
摘要翻译： 氮化物半导体激光装置在氮化物半导体基板的原理面上包括：具有第一导电类型的氮化物半导体层; 包含铟的有源层和具有与所述第一导电类型不同的第二导电类型的氮化物半导体层，并且其表面形成条纹脊; 所述氮化物半导体衬底的所述主面在至少基本上平行于所述条纹脊的方向上具有相对于参考晶面的偏角α（θ a ）。
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公开(公告)号：US20070128356A1
公开(公告)日：2007-06-07
申请号：US11673299
申请日：2007-02-09
CPC分类号： H01L21/67178 , G03F7/70991 , H01L21/67017 , H01L21/6715 , H01L21/67161 , H01L21/67184 , H01L21/67742 , H01L21/67778
摘要： On top of respective areas divided by partition plates, that is, a cassette station, a processing station, and an interface section in a coating and developing processing system, gas supply sections for supplying an inert gas into the respective areas are provided. Exhaust pipes for exhausting atmospheres in the respective areas are provided at the bottom of the respective areas. The atmospheres in the respective areas are maintained in a clean condition by supplying the inert gas not containing impurities such as oxygen and fine particles from the respective gas supply sections into the respective areas and exhausting the atmospheres in the respective areas from the exhaust pipes.
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公开(公告)号：US20060088072A1
公开(公告)日：2006-04-27
申请号：US11255932
申请日：2005-10-24
IPC分类号： H01S5/00
CPC分类号： B82Y20/00 , H01S5/22 , H01S5/34333
摘要： A GaN system stripe type semiconductor laser having an index guiding structure, and producing higher mode or multimode oscillation in the transverse mode, which is constructed such that the horizontal beam radiation angle of each of a plurality of the emitting regions is minimized to provide a high luminance focused beam. In a GaN system stripe type semiconductor laser, which has an index guiding structure constituted, for example, by a ridge structure formed on a p-GaN cap layer 28 and p-Al0.1Ga0.9N clad layer 27 with the width W2, and produces higher mode or multimode oscillation in the transverse mode, the effective index difference Δn between the central region of the stripe and outside of the stripe is set not greater than 1.5×10−2.
摘要翻译： 一种具有折射率引导结构的GaN系带条型半导体激光器，在横模中产生较高模式或多模振荡，其结构使得多个发射区域中的每一个的水平射束辐射角最小化以提供高 亮度聚焦光束。 在GaN系带状半导体激光器中，其具有例如由p-GaN覆盖层28和p-Al 0.1 Ga 0.9形成的脊结构构成的折射引导结构 具有宽度W 2的N包覆层27，并且在横向模式中产生较高模式或多模式振荡，条纹的中心区域和条纹外部之间的有效折射率差Deltan被设置为不大于1.5×10 -2 。
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公开(公告)号：US06884298B2
公开(公告)日：2005-04-26
申请号：US10309273
申请日：2002-12-04
CPC分类号： G03F7/168
摘要： A coating and developing treatment system for performing coating and developing treatment. A coating treatment unit is configured to form a resist film on a substrate. A developing treatment unit is configured to develop the substrate. A heating/cooling unit includes a heat plate configured to continuously heat and a cooling plate configured to continuously cool in one casing the substrate on which the resist film has been formed by the coating treatment unit. A gas nozzle is configured to supply a treatment gas to the resist film formed on the substrate to form a protective film on a surface of the resist film. The gas nozzle is disposed on a cooling plate side in the heating/cooling unit. The gas nozzle is configured to move to a position above the substrate on the cooling plate during cooling at the cooling plate, to supply the treatment gas.
摘要翻译： 一种用于进行涂层和显影处理的涂层和显影处理系统。 涂布处理单元构造成在基板上形成抗蚀剂膜。 显影处理单元构造成显影基板。 加热/冷却单元包括被配置为连续加热的加热板和构造成在一个壳体中连续地冷却由涂覆处理单元形成有抗蚀剂膜的基板的冷却板。 气体喷嘴被构造成将处理气体供给到形成在基板上的抗蚀剂膜，以在抗蚀剂膜的表面上形成保护膜。 气体喷嘴设置在加热/冷却单元中的冷却板侧。 气体喷嘴构造成在冷却板冷却期间移动到冷却板上的基板上方的位置，以供应处理气体。
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公开(公告)号：US06632281B2
公开(公告)日：2003-10-14
申请号：US09772923
申请日：2001-01-31
申请人： Junichi Kitano , Yuji Matsuyama
发明人： Junichi Kitano , Yuji Matsuyama
IPC分类号： B05C1108
CPC分类号： H01L21/67178 , G03F7/70991 , H01L21/67017 , H01L21/6715 , H01L21/67161 , H01L21/67184 , H01L21/67742 , H01L21/67778 , Y10T29/41
摘要： On top of respective areas divided by partition plates, that is, a cassette station, a processing station, and an interface section in a coating and developing processing system, gas supply sections for supplying an inert gas into the respective areas are provided. Exhaust pipes for exhausting atmospheres in the respective areas are provided at the bottom of the respective areas. The atmospheres in the respective areas are maintained in a clean condition by supplying the inert gas not containing impurities such as oxygen and fine particles from the respective gas supply sections into the respective areas and exhausting the atmospheres in the respective areas from the exhaust pipes.
摘要翻译： 在涂覆和显影处理系统中由分隔板，即盒式磁带站，加工站和界面部分划分的各个区域之上，提供用于向各个区域供应惰性气体的气体供应部分。 在各个区域的底部设置用于各区域的排气的排气管。 通过将不含杂质的惰性气体（例如氧气和细颗粒）从各个气体供给区域供给到各个区域并排出排气管的各个区域中的气氛，将各个区域中的气氛保持在清洁状态。 / PTEXT>
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公开(公告)号：US06620248B2
公开(公告)日：2003-09-16
申请号：US09820938
申请日：2001-03-30
申请人： Takahiro Kitano , Yuji Matsuyama , Junichi Kitano , Hiroyuki Hara
发明人： Takahiro Kitano , Yuji Matsuyama , Junichi Kitano , Hiroyuki Hara
IPC分类号： B05C1110
CPC分类号： H01L21/6715
摘要： In a coating apparatus for supplying a mixed solution of a resist solution and a thinner onto a wafer from a nozzle, the nozzle is connected to a mixed solution supply pipe, and the resist solution and the thinner are supplied to the mixed solution supply pipe from a resist solution supply pipe and a thinner supply pipe respectively through a junction pipe. The diameter of the junction pipe is set smaller than those of other supply pipes, whereby the resist solution and the thinner can be mixed efficiently in the junction pipe, and as a result the wafer is coated with the mixed solution so that a uniform film thickness can be obtained within the surface of the wafer.
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