摘要:
An optical intensity-to-phase converter according to the present invention includes first and second waveguides to which a first input light is input, a third waveguide to which a second input light is input, and an interaction region that is provided in common on the second and third waveguides in which the first and second input lights are multiplexed and interact. The optical intensity-to-phase converter provides delay to output lights output from the first and second waveguides based on intensity of the first or second input light. Then, it is possible to provide an optical intensity-to-phase converter that enables simple configuration of an optical A/D converter.
摘要:
The present invention provides an external resonator-type wavelength tunable laser device that can properly fulfill a wavelength tuning function even with the use of a planar wavelength tunable reflector involving a considerable level of residual reflection. The external resonator-type wavelength tunable laser device includes a planar reflection structure enabling a reflection spectral peak wavelength to be varied and a semiconductor element as a semiconductor gain medium. The semiconductor gain medium is composed of a multiple quantum well in which product Γ·L of optical confinement constant Γ and semiconductor gain medium length L (μm) of a gain layer is at least 25 μm and at most 40 μm and in which gain peak wavelength λ0 (nm) observed during carrier injected with a maximum modal gain equal to an internal loss of the semiconductor gain medium is larger than −3·ΔR/2+(λc+35) and smaller than (−(Γ·L)/7+8)·ΔR+(−(Γ·L)+λc+45). Here, ΔR (dB) denotes a reflectance difference, and λc (nm) denotes a wavelength at a center of an operating wavelength range of the wavelength tunable laser device.
摘要:
The present invention has an object to provide an optical modulation device and an optical modulation method that achieve an excellent spectral efficiency with a simple and compact configuration and low power consumption. An optical modulation device according to an exemplary aspect of the present invention includes a CW light source (11), a coupler (12), optical modulators (14a) and (14b), an optical frequency shifter (15b), a serial-to-parallel converter (21), and a delay circuit (24a). The serial-to-parallel converter (21) divides a data signal having a bit rate B into two data strings having a bit rate B/2, and extracts a clock signal (CLK). The delay circuit (24a) temporally synchronizes the two data strings. CW light emitted from the CW light source is split into two beams by the coupler (12). The optical modulators (14a) and (14b) generate optical signals by modulating the two split light beams according to the data strings. The optical frequency shifter (15b) shifts center frequencies of the optical signals by Δf=B/(2×2) according to the clock signal (CLK).
摘要翻译:本发明的目的是提供一种光调制装置和光调制方法,其以简单紧凑的结构和低功耗实现了优异的光谱效率。 根据本发明的示例性方面的光调制装置包括CW光源(11),耦合器(12),光调制器(14a)和(14b),光移频器(15b),串 - 并联转换器(21)和延迟电路(24a)。 串行到并行转换器(21)将具有比特率B的数据信号分成具有比特率B / 2的两个数据串,并提取时钟信号(CLK)。 延迟电路(24a)在时间上同步两个数据串。 从CW光源发射的CW光被耦合器(12)分成两束。 光调制器(14a)和(14b)通过根据数据串调制两个分束光束来产生光信号。 光移位器(15b)根据时钟信号(CLK)将光信号的中心频率移位&Dgr; f = B /(2×2)。
摘要:
The invention provides a semiconductor optical modulator including a two-step mesa optical waveguide having a first clad layer (101); a mesa-like core layer (102) formed over the first clad layer (101); and a second clad layer (103) formed into a mesa shape over the core layer (102), and having a mesa width smaller than that of the core layer (102). The two-step mesa optical waveguide includes a multi-mode optical waveguide region to which an electric field is applied or into which an electric current is injected, and a single-mode optical waveguide region to which the electric field is not applied and into which the electric current is not injected. When the mesa width of the core layer in the multi-mode optical waveguide region is defined as Wmesa1, and the mesa width of the core layer in the single-mode optical waveguide region is defined as Wmesa2, Wmesa1>Wmesa2 is satisfied.
摘要:
An optical A/D converter according to the present invention includes an optical splitter that splits an analog input signal light into plurals, a plurality of Mach-Zehnder interferometers to which each of the signal lights split by the optical splitter is input, and plurality of optical/electrical conversion unit that convert each signal lights output from each Mach-Zehnder interferometer into a digital electrical signal, in which each Mach-Zehnder interferometer includes optical intensity-to-phase conversion unit that optically convert intensity of the input signal light into an amount of phase shift and the amount of phase shift differs for each Mach-Zehnder interferometer. Then, it is possible to provide a high speed and low power consuming optical demodulation circuit.
摘要:
In an external cavity wavelength tunable laser device including an external cavity (20) which includes a semiconductor optical amplifier (2) and performs laser oscillation operation by feeding back external light, a wavelength tunable mirror (7) having at least a single peak reflection spectrum characteristic within a laser wavelength tuning range is placed on one end of the external cavity (20), and a Fabry Perot mode interval determined by the effective length of the external cavity (20) is not less than 1/10 times and not more than 10 times the reflection band full width half maximum of the wavelength tunable mirror (7).
摘要:
The invention provides a semiconductor optical modulator including a two-step mesa optical waveguide having a first clad layer (101); a mesa-like core layer (102) formed over the first clad layer (101); and a second clad layer (103) formed into a mesa shape over the core layer (102), and having a mesa width smaller than that of the core layer (102). The two-step mesa optical waveguide includes a multi-mode optical waveguide region to which an electric field is applied or into which an electric current is injected, and a single-mode optical waveguide region to which the electric field is not applied and into which the electric current is not injected. When the mesa width of the core layer in the multi-mode optical waveguide region is defined as Wmesa1, and the mesa width of the core layer in the single-mode optical waveguide region is defined as Wmesa2, Wmesa1>Wmesa2 is satisfied.
摘要:
The present invention provides an external resonator-type wavelength tunable laser device that can properly fulfill a wavelength tuning function even with the use of a planar wavelength tunable reflector involving a considerable level of residual reflection. The external resonator-type wavelength tunable laser device includes a planar reflection structure enabling a reflection spectral peak wavelength to be varied and a semiconductor element as a semiconductor gain medium. The semiconductor gain medium is composed of a multiple quantum well in which product Γ·L of optical confinement constant Γ and semiconductor gain medium length L (μm) of a gain layer is at least 25 μm and at most 40 μm and in which gain peak wavelength λ0 (nm) observed during carrier injected with a maximum modal gain equal to an internal loss of the semiconductor gain medium is larger than −3·ΔR/2+(λc+35) and smaller than (−(Γ·L)/7+8)·ΔR+(−(Γ·L)+λc+45). Here, ΔR (dB) denotes a reflectance difference, and he (nm) denotes a wavelength at a center of an operating wavelength range of the wavelength tunable laser device.
摘要:
A semiconductor optical waveguide-A having an optical amplification function and a semiconductor optical waveguide-B having a light control function are integrated together on the same substrate. A facet of the semiconductor optical waveguide-A facing an isolation trench and a facet of the semiconductor optical waveguide-B facing the isolation trench are configured as a composite optical reflector/optical connector using an optical interference. The facet of the semiconductor optical waveguide-A achieves an optical reflectivity not higher than the reflectivity corresponding to a cleaved facet and not smaller than several percent, and an optical coupling coefficient of not lower than 50% between the semiconductor optical waveguide-A and the semiconductor optical waveguide-B.
摘要:
A fuel cell includes: a membrane electrode assembly having an electrolyte membrane, an anode disposed on one side of the electrolyte membrane, and a cathode disposed on the other side thereof; a porous passage that is disposed on at least one side of the membrane electrode assembly, and through which a fuel gas is supplied to the anode or an oxidant gas is supplied to the cathode; and a manifold portion-, through which the fuel gas or the oxidant gas is supplied to the porous passage, and that is provided so as to pass through the fuel cell in a stacking direction, in which the electrolyte membrane, the anode, the cathode, and the porous passage are stacked, wherein a manifold portion-side end portion of the porous passage has a gas inlet at least one of stacking surfaces of the porous passage that face in the stacking direction.