External resonator-type wavelength tunable laser device
    12.
    发明授权
    External resonator-type wavelength tunable laser device 有权
    外部谐振器型波长可调激光器件

    公开(公告)号:US08189631B2

    公开(公告)日:2012-05-29

    申请号:US12664294

    申请日:2008-05-22

    IPC分类号: H01S3/13

    摘要: The present invention provides an external resonator-type wavelength tunable laser device that can properly fulfill a wavelength tuning function even with the use of a planar wavelength tunable reflector involving a considerable level of residual reflection. The external resonator-type wavelength tunable laser device includes a planar reflection structure enabling a reflection spectral peak wavelength to be varied and a semiconductor element as a semiconductor gain medium. The semiconductor gain medium is composed of a multiple quantum well in which product Γ·L of optical confinement constant Γ and semiconductor gain medium length L (μm) of a gain layer is at least 25 μm and at most 40 μm and in which gain peak wavelength λ0 (nm) observed during carrier injected with a maximum modal gain equal to an internal loss of the semiconductor gain medium is larger than −3·ΔR/2+(λc+35) and smaller than (−(Γ·L)/7+8)·ΔR+(−(Γ·L)+λc+45). Here, ΔR (dB) denotes a reflectance difference, and λc (nm) denotes a wavelength at a center of an operating wavelength range of the wavelength tunable laser device.

    摘要翻译: 本发明提供一种外部谐振器型波长可调激光器件,其即使使用涉及相当程度的残余反射的平面波长可调谐反射器也能适当地实现波长调谐功能。 外部谐振器型波长可调激光器件包括能够使反射光谱峰值波长变化的平面反射结构和半导体元件作为半导体增益介质。 半导体增益介质由多重量子阱组成,其中光学限制常数Ggr; 并且增益层的半导体增益介质长度L(μm)为至少25μm且至多40μm,并且其中以最大模态增益注入的载流子注入的增益峰值波长λ0(nm)等于半导体的内部损耗 增益介质大于-3·&Dgr; R / 2 +(λc+ 35)且小于( - (&Ggr;·L)/ 7 + 8)·&Dgr; R +( - (&Ggr;·L)+λc+ 45)。 这里,&Dgr; R(dB)表示反射率差,λc(nm)表示波长可调激光器件的工作波长范围的中心处的波长。

    Optical modulation device and optical modulation method
    13.
    发明授权
    Optical modulation device and optical modulation method 失效
    光调制装置及光调制方式

    公开(公告)号:US08705980B2

    公开(公告)日:2014-04-22

    申请号:US13508721

    申请日:2010-09-28

    IPC分类号: H04B10/12

    摘要: The present invention has an object to provide an optical modulation device and an optical modulation method that achieve an excellent spectral efficiency with a simple and compact configuration and low power consumption. An optical modulation device according to an exemplary aspect of the present invention includes a CW light source (11), a coupler (12), optical modulators (14a) and (14b), an optical frequency shifter (15b), a serial-to-parallel converter (21), and a delay circuit (24a). The serial-to-parallel converter (21) divides a data signal having a bit rate B into two data strings having a bit rate B/2, and extracts a clock signal (CLK). The delay circuit (24a) temporally synchronizes the two data strings. CW light emitted from the CW light source is split into two beams by the coupler (12). The optical modulators (14a) and (14b) generate optical signals by modulating the two split light beams according to the data strings. The optical frequency shifter (15b) shifts center frequencies of the optical signals by Δf=B/(2×2) according to the clock signal (CLK).

    摘要翻译: 本发明的目的是提供一种光调制装置和光调制方法,其以简单紧凑的结构和低功耗实现了优异的光谱效率。 根据本发明的示例性方面的光调制装置包括CW光源(11),耦合器(12),光调制器(14a)和(14b),光移频器(15b),串 - 并联转换器(21)和延迟电路(24a)。 串行到并行转换器(21)将具有比特率B的数据信号分成具有比特率B / 2的两个数据串,并提取时钟信号(CLK)。 延迟电路(24a)在时间上同步两个数据串。 从CW光源发射的CW光被耦合器(12)分成两束。 光调制器(14a)和(14b)通过根据数据串调制两个分束光束来产生光信号。 光移位器(15b)根据时钟信号(CLK)将光信号的中心频率移位&Dgr; f = B /(2×2)。

    Semiconductor optical modulator, semiconductor optical integrated device, and method of manufacturing the same
    14.
    发明授权
    Semiconductor optical modulator, semiconductor optical integrated device, and method of manufacturing the same 失效
    半导体光调制器,半导体光集成器件及其制造方法

    公开(公告)号:US08600198B2

    公开(公告)日:2013-12-03

    申请号:US13254336

    申请日:2010-03-05

    摘要: The invention provides a semiconductor optical modulator including a two-step mesa optical waveguide having a first clad layer (101); a mesa-like core layer (102) formed over the first clad layer (101); and a second clad layer (103) formed into a mesa shape over the core layer (102), and having a mesa width smaller than that of the core layer (102). The two-step mesa optical waveguide includes a multi-mode optical waveguide region to which an electric field is applied or into which an electric current is injected, and a single-mode optical waveguide region to which the electric field is not applied and into which the electric current is not injected. When the mesa width of the core layer in the multi-mode optical waveguide region is defined as Wmesa1, and the mesa width of the core layer in the single-mode optical waveguide region is defined as Wmesa2, Wmesa1>Wmesa2 is satisfied.

    摘要翻译: 本发明提供一种半导体光调制器,包括具有第一覆层(101)的两步台面光波导; 在所述第一包层(101)上形成的台面状芯层(102); 以及在所述芯层(102)上形成为台面形状的第二包层(103),并且具有比所述芯层(102)的台面宽度小的台面宽度。 两级台面光波导包括施加电场或注入电流的多模光波导区域和不施加电场的单模光波导区域,其中 电流不会被注入。 当多模光波导区域中的核心层的台面宽度被定义为Wmesa1时,单模光波导区域中的核心层的台面宽度被定义为Wmesa2,所以满足Wmesa1> Wmesa2。

    OPTICAL ANALOG-TO-DIGITAL CONVERTER, METHOD OF CONSTRUCTING THE SAME, OPTICAL SIGNAL DEMODULATOR, AND OPTICAL MODULATOR-DEMODULATOR
    15.
    发明申请
    OPTICAL ANALOG-TO-DIGITAL CONVERTER, METHOD OF CONSTRUCTING THE SAME, OPTICAL SIGNAL DEMODULATOR, AND OPTICAL MODULATOR-DEMODULATOR 有权
    光学模拟数字转换器,其构造方法,光信号解调器和光调制器 - 解调器

    公开(公告)号:US20130063806A1

    公开(公告)日:2013-03-14

    申请号:US13698018

    申请日:2011-04-28

    IPC分类号: H03M1/12 B23P11/00 G02F2/00

    摘要: An optical A/D converter according to the present invention includes an optical splitter that splits an analog input signal light into plurals, a plurality of Mach-Zehnder interferometers to which each of the signal lights split by the optical splitter is input, and plurality of optical/electrical conversion unit that convert each signal lights output from each Mach-Zehnder interferometer into a digital electrical signal, in which each Mach-Zehnder interferometer includes optical intensity-to-phase conversion unit that optically convert intensity of the input signal light into an amount of phase shift and the amount of phase shift differs for each Mach-Zehnder interferometer. Then, it is possible to provide a high speed and low power consuming optical demodulation circuit.

    摘要翻译: 根据本发明的光学A / D转换器包括将模拟输入信号光分解为多个的光分路器,输入由光分路器分离的每个信号光的多个马赫 - 曾德干涉仪,并且多个 将每个马赫 - 策德尔干涉仪输出的每个信号光转换为数字电信号的光/电转换单元,其中每个马赫 - 策德尔干涉仪包括光学强度 - 相位转换单元,其将输入信号光的强度光学地转换成 每个Mach-Zehnder干涉仪的相移量和相移量都不同。 然后,可以提供高速,低功耗的光解调电路。

    External cavity wavelength tunable laser device and optical output module
    16.
    发明授权
    External cavity wavelength tunable laser device and optical output module 失效
    外腔波长可调激光器件和光输出模块

    公开(公告)号:US08144738B2

    公开(公告)日:2012-03-27

    申请号:US13165288

    申请日:2011-06-21

    IPC分类号: H01S3/10 H01S3/08

    CPC分类号: H01S5/141

    摘要: In an external cavity wavelength tunable laser device including an external cavity (20) which includes a semiconductor optical amplifier (2) and performs laser oscillation operation by feeding back external light, a wavelength tunable mirror (7) having at least a single peak reflection spectrum characteristic within a laser wavelength tuning range is placed on one end of the external cavity (20), and a Fabry Perot mode interval determined by the effective length of the external cavity (20) is not less than 1/10 times and not more than 10 times the reflection band full width half maximum of the wavelength tunable mirror (7).

    摘要翻译: 在包括具有半导体光放大器(2)的外部空腔(20)并通过反馈外部光进行激光振荡操作的外腔波长可调激光器件中,具有至少一个单峰反射光谱的波长可调谐镜(7) 在激光波长调谐范围内的特征放置在外腔(20)的一端,由外腔(20)的有效长度确定的法布里珀罗模式间隔不小于1/10倍,不大于 10倍波长可调镜(7)的反射带全宽半最大值。

    SEMICONDUCTOR OPTICAL MODULATOR, SEMICONDUCTOR OPTICAL INTEGRATED DEVICE, AND METHOD OF MANUFACTURING THE SAME
    17.
    发明申请
    SEMICONDUCTOR OPTICAL MODULATOR, SEMICONDUCTOR OPTICAL INTEGRATED DEVICE, AND METHOD OF MANUFACTURING THE SAME 失效
    半导体光学调制器,半导体光学集成器件及其制造方法

    公开(公告)号:US20110317956A1

    公开(公告)日:2011-12-29

    申请号:US13254336

    申请日:2010-03-05

    IPC分类号: G02F1/025 H01L33/58

    摘要: The invention provides a semiconductor optical modulator including a two-step mesa optical waveguide having a first clad layer (101); a mesa-like core layer (102) formed over the first clad layer (101); and a second clad layer (103) formed into a mesa shape over the core layer (102), and having a mesa width smaller than that of the core layer (102). The two-step mesa optical waveguide includes a multi-mode optical waveguide region to which an electric field is applied or into which an electric current is injected, and a single-mode optical waveguide region to which the electric field is not applied and into which the electric current is not injected. When the mesa width of the core layer in the multi-mode optical waveguide region is defined as Wmesa1, and the mesa width of the core layer in the single-mode optical waveguide region is defined as Wmesa2, Wmesa1>Wmesa2 is satisfied.

    摘要翻译: 本发明提供一种半导体光调制器,包括具有第一覆层(101)的两步台面光波导; 在所述第一包层(101)上形成的台面状芯层(102); 以及在所述芯层(102)上形成为台面形状的第二包层(103),并且具有比所述芯层(102)的台面宽度小的台面宽度。 两级台面光波导包括施加电场或注入电流的多模光波导区域和不施加电场的单模光波导区域,其中 电流不会被注入。 当多模光波导区域中的核心层的台面宽度被定义为Wmesa1时,单模光波导区域中的核心层的台面宽度被定义为Wmesa2,所以满足Wmesa1> Wmesa2。

    EXTERNAL RESONATOR-TYPE WAVELENGTH TUNABLE LASER DEVICE
    18.
    发明申请
    EXTERNAL RESONATOR-TYPE WAVELENGTH TUNABLE LASER DEVICE 有权
    外部谐振器型波长激光器激光器件

    公开(公告)号:US20100246618A1

    公开(公告)日:2010-09-30

    申请号:US12664294

    申请日:2008-05-22

    IPC分类号: H01S3/13

    摘要: The present invention provides an external resonator-type wavelength tunable laser device that can properly fulfill a wavelength tuning function even with the use of a planar wavelength tunable reflector involving a considerable level of residual reflection. The external resonator-type wavelength tunable laser device includes a planar reflection structure enabling a reflection spectral peak wavelength to be varied and a semiconductor element as a semiconductor gain medium. The semiconductor gain medium is composed of a multiple quantum well in which product Γ·L of optical confinement constant Γ and semiconductor gain medium length L (μm) of a gain layer is at least 25 μm and at most 40 μm and in which gain peak wavelength λ0 (nm) observed during carrier injected with a maximum modal gain equal to an internal loss of the semiconductor gain medium is larger than −3·ΔR/2+(λc+35) and smaller than (−(Γ·L)/7+8)·ΔR+(−(Γ·L)+λc+45). Here, ΔR (dB) denotes a reflectance difference, and he (nm) denotes a wavelength at a center of an operating wavelength range of the wavelength tunable laser device.

    摘要翻译: 本发明提供一种外部谐振器型波长可调激光器件,其即使使用涉及相当程度的残余反射的平面波长可调谐反射器也能适当地实现波长调谐功能。 外部谐振器型波长可调激光器件包括能够使反射光谱峰值波长变化的平面反射结构和半导体元件作为半导体增益介质。 半导体增益介质由多重量子阱组成,其中光学限制常数Ggr; 并且增益层的半导体增益介质长度L(μm)为至少25μm且至多40μm,并且其中以最大模态增益注入的载流子注入的增益峰值波长λ0(nm)等于半导体的内部损耗 增益介质大于-3·&Dgr; R / 2 +(λc+ 35)且小于( - (&Ggr;·L)/ 7 + 8)·&Dgr; R +( - (&Ggr;·L)+λc+ 45)。 这里,&Dgr; R(dB)表示反射率差,he(nm)表示波长可调激光器件的工作波长范围的中心处的波长。

    Semiconductor Laser, Module and Optical Transmitter
    19.
    发明申请
    Semiconductor Laser, Module and Optical Transmitter 失效
    半导体激光器,模块和光发射机

    公开(公告)号:US20090274187A1

    公开(公告)日:2009-11-05

    申请号:US12086287

    申请日:2007-01-10

    IPC分类号: H01S5/028 H01S5/026 H01S5/24

    CPC分类号: H01S5/026

    摘要: A semiconductor optical waveguide-A having an optical amplification function and a semiconductor optical waveguide-B having a light control function are integrated together on the same substrate. A facet of the semiconductor optical waveguide-A facing an isolation trench and a facet of the semiconductor optical waveguide-B facing the isolation trench are configured as a composite optical reflector/optical connector using an optical interference. The facet of the semiconductor optical waveguide-A achieves an optical reflectivity not higher than the reflectivity corresponding to a cleaved facet and not smaller than several percent, and an optical coupling coefficient of not lower than 50% between the semiconductor optical waveguide-A and the semiconductor optical waveguide-B.

    摘要翻译: 具有光放大功能的半导体光波导A和具有光控功能的半导体光波导-B一起集成在同一基板上。 面向隔离沟槽的半导体光波导A的面和面向隔离沟槽的半导体光波导-B的面被配置为使用光学干涉的复合光反射器/光连接器。 半导体光波导A的小面实现不高于对应于切割面的反射率并且不小于几个百分比的光学反射率,并且半导体光波导A与第二半导体光波导A之间的光耦合系数不低于50% 半导体光波导-B。

    Fuel cell and fuel cell stack
    20.
    发明授权
    Fuel cell and fuel cell stack 有权
    燃料电池和燃料电池堆

    公开(公告)号:US09343761B2

    公开(公告)日:2016-05-17

    申请号:US13991598

    申请日:2011-12-05

    申请人: Kenji Sato

    发明人: Kenji Sato

    摘要: A fuel cell includes: a membrane electrode assembly having an electrolyte membrane, an anode disposed on one side of the electrolyte membrane, and a cathode disposed on the other side thereof; a porous passage that is disposed on at least one side of the membrane electrode assembly, and through which a fuel gas is supplied to the anode or an oxidant gas is supplied to the cathode; and a manifold portion-, through which the fuel gas or the oxidant gas is supplied to the porous passage, and that is provided so as to pass through the fuel cell in a stacking direction, in which the electrolyte membrane, the anode, the cathode, and the porous passage are stacked, wherein a manifold portion-side end portion of the porous passage has a gas inlet at least one of stacking surfaces of the porous passage that face in the stacking direction.

    摘要翻译: 燃料电池包括:具有电解质膜的膜电极组件,设置在电解质膜一侧的阳极和设置在其另一侧的阴极; 设置在所述膜电极组件的至少一侧的多孔通路,向所述阴极供给向阳极供给燃料气体或氧化剂气体的多孔通路, 以及歧管部分,燃料气体或氧化剂气体通过该歧管部分被供应到多孔通道,并且被设置成沿堆叠方向穿过燃料电池,其中电解质膜,阳极,阴极 并且多孔通道被堆叠,其中多孔通道的歧管部分侧端部具有气体入口,所述多孔通道的堆叠表面在层叠方向上面对的至少一个。