公开(公告)号：US07482634B2

公开(公告)日：2009-01-27

申请号：US10950029

申请日：2004-09-24

申请人： Robert John Wojnarowski ,  Stanton Earl Weaver, Jr. ,  Abasifreke Udo Ebong ,  Xian An (Andrew) Cao ,  Steven Francis LeBoeuf ,  Larry Burton Rowland ,  Stephen D. Arthur

发明人： Robert John Wojnarowski ,  Stanton Earl Weaver, Jr. ,  Abasifreke Udo Ebong ,  Xian An (Andrew) Cao ,  Steven Francis LeBoeuf ,  Larry Burton Rowland ,  Stephen D. Arthur

IPC分类号： H01L33/00

CPC分类号： H01L33/20 ,  H01L27/153 ,  H01L33/32

摘要： The present invention is directed towards a source of ultraviolet energy, wherein the source is a UV-emitting LED's. In an embodiment of the invention, the UV-LED's are characterized by a base layer material including a substrate, a p-doped semiconductor material, a multiple quantum well, a n-doped semiconductor material, upon which base material a p-type metal resides and wherein the base structure has a mesa configuration, which mesa configuration may be rounded on a boundary surface, or which may be non-rounded, such as a mesa having an upper boundary surface that is flat. In other words, the p-type metal resides upon a mesa formed out of the base structure materials. In a more specific embodiment, the UV-LED structure includes n-type metallization layer, passivation layers, and bond pads positioned at appropriate locations of the device. In a more specific embodiment, the p-type metal layer is encapsulated in the encapsulating layer.

摘要翻译： 本发明涉及一种紫外线能量源，其中源是紫外线发射的LED。 在本发明的实施例中，UV-LED的特征在于基底层材料，其包括基底，p掺杂半导体材料，多量子阱，n掺杂半导体材料，基底材料为p型金属 并且其中基部结构具有台面构造，该台面构造可以在边界表面上圆化，或者可以是非圆形的，例如具有平坦的上边界表面的台面。 换句话说，p型金属位于由基底结构材料形成的台面上。 在更具体的实施例中，UV-LED结构包括位于设备适当位置的n型金属化层，钝化层和接合焊盘。 在更具体的实施例中，p型金属层被封装在封装层中。

公开(公告)号：US07391058B2

公开(公告)日：2008-06-24

申请号：US11168174

申请日：2005-06-27

申请人： Larry Burton Rowland ,  Ahmed Elasser

发明人： Larry Burton Rowland ,  Ahmed Elasser

IPC分类号： H01L29/15 ,  H01L31/0312

CPC分类号： H01L21/02505 ,  H01L21/02447 ,  H01L21/02529

摘要： A composite structure having a silicon carbide epitaxial layer is provided. The epitaxial layer includes at least four regions arranged vertically and defining respective interfaces, where each of the regions is characterized by a respective impurity concentration, where the impurity concentrations vary across each of the interfaces, and where each of the impurity concentrations exceeds 1×1017 cm−3 for at least one single impurity in all of the regions.

摘要翻译： 提供了具有碳化硅外延层的复合结构。 外延层包括至少四个垂直排列的区域并限定相应的界面，其中每个区域由相应的杂质浓度表征，其中杂质浓度在每个界面上变化，并且其中每个杂质浓度超过1×10 9 对于所有区域中的至少一种单一杂质，对于> 17 ±3 。

公开(公告)号：US20070215887A1

公开(公告)日：2007-09-20

申请号：US11588181

申请日：2006-10-26

申请人： Mark Philip D'Evelyn ,  Dong-Sil Park ,  Steven Francis LeBoeuf ,  Larry Burton Rowland ,  Kristi Jean Narang ,  Huicong Hong ,  Peter Micah Sandvik

发明人： Mark Philip D'Evelyn ,  Dong-Sil Park ,  Steven Francis LeBoeuf ,  Larry Burton Rowland ,  Kristi Jean Narang ,  Huicong Hong ,  Peter Micah Sandvik

IPC分类号： H01L33/00

CPC分类号： C30B29/406 ,  C30B7/10

摘要： There is provided a GaN single crystal at least about 2.75 millimeters in diameter, with a dislocation density less than about 104 cm−1, and having substantially no tilt boundaries. A method of forming a GaN single crystal is also disclosed. The method includes providing a nucleation center, a GaN source material, and a GaN solvent in a chamber. The chamber is pressurized. First and second temperature distributions are generated in the chamber such that the solvent is supersaturated in the nucleation region of the chamber. The first and second temperature distributions have different temperature gradients within the chamber.

摘要翻译： 提供了直径至少约2.75毫米的GaN单晶，位错密度小于约10 -4厘米-1，并且基本上没有倾斜边界。 还公开了形成GaN单晶的方法。 该方法包括在室中提供成核中心，GaN源材料和GaN溶剂。 该室被加压。 在室中产生第一和第二温度分布，使得溶剂在室的成核区域中过饱和。 第一和第二温度分布在室内具有不同的温度梯度。

公开(公告)号：US07078731B2

公开(公告)日：2006-07-18

申请号：US11010507

申请日：2004-12-13

申请人： Mark Philip D'Evelyn ,  Dong-Sil Park ,  Steven Francis LeBoeuf ,  Larry Burton Rowland ,  Kristi Jean Narang ,  Huicong Hong ,  Stephen Daley Arthur ,  Peter Micah Sandvik

发明人： Mark Philip D'Evelyn ,  Dong-Sil Park ,  Steven Francis LeBoeuf ,  Larry Burton Rowland ,  Kristi Jean Narang ,  Huicong Hong ,  Stephen Daley Arthur ,  Peter Micah Sandvik

IPC分类号： H01L33/00

CPC分类号： H01L33/32 ,  B82Y10/00 ,  B82Y30/00 ,  C30B7/00 ,  C30B7/005 ,  C30B29/403 ,  C30B29/406

摘要： A GaN crystal having up to about 5 mole percent of at least one of aluminum, indium, and combinations thereof. The GaN crystal has at least one grain having a diameter greater than 2 mm, a dislocation density less than about 104 cm−2, and is substantially free of tilt boundaries.

摘要翻译： 具有至多约5摩尔％的铝，铟及其组合中的至少一种的GaN晶体。 GaN晶体具有至少一个直径大于2mm的晶粒，位错密度小于约10 -4 cm -2，并且基本上没有倾斜边界。