公开(公告)号：US06723215B2

公开(公告)日：2004-04-20

申请号：US10106220

申请日：2002-03-27

申请人： Young-Kyou Park ,  Hyeon-Ill Um ,  Jai-Kwang Shin ,  Seong-Gu Kim

发明人： Young-Kyou Park ,  Hyeon-Ill Um ,  Jai-Kwang Shin ,  Seong-Gu Kim

IPC分类号： C23C1435

CPC分类号： C23C14/35 ,  H01J37/3402

摘要： A sputtering apparatus includes a sputtering chamber, a target disposed in the sputtering chamber, and a magnetic field generator for generating a rotating magnetic field at the front of the target. The magnetic field generator includes a main magnetic field-generating part that faces the back of the target and is horizontally (laterally) offset from a vertical line passing through the center of the target. A magnetic annulus of the main magnetic field-generating part forms a magnetic enclosure having openings therethrough at locations faced in the directions of the central and peripheral portions of the target. The magnetic field-generating part thus produces a magnetic field having a non-uniform distribution at the front of the target. A substrate is positioned within the sputtering chamber facing the front of the target. A metal layer is formed by sputtering atoms from the front of the target onto the substrate. The behavior of the sputtered atoms can be effectively controlled by the magnetic field.

摘要翻译： 溅射装置包括溅射室，设置在溅射室中的靶和用于在靶的前部产生旋转磁场的磁场发生器。 磁场发生器包括面向目标背面的水平（横向）偏离通过目标中心的垂直线的主磁场产生部分。 主磁场产生部分的磁环形成一个磁性外壳，在与目标的中心部分和周边部分的方向相对的位置处具有穿过其的开口。 因此，磁场产生部分产生在靶的前部具有不均匀分布的磁场。 衬底位于溅射室内面向靶的前部。 通过将原子从靶的前部溅射到基底上而形成金属层。 溅射原子的行为可以被磁场有效地控制。