摘要:
The semiconductor apparatus includes a semiconductor chip, and a source electrode and a gate electrode which are formed on the semiconductor chip and electrically connected with a lead frame. The source electrode is electrically connected with the lead frame by being laser-welded with a thin-film shaped connecting portion formed at an end of the lead frame. This enables the provision of a semiconductor apparatus with enhanced productivity and yields which exhibits high electrical operability and reliability.
摘要:
A process for producing an esterase by cultivating an esterase-producing microorganism is disclosed. The cultivation is carried out in a medium to which has been added an ester of sorbitan or polyoxyethylene sorbitan and a substituted or unsubstituted fatty acid having 12 to 18 carbon atoms along with an amino acid which has the formula: ##STR1## wherein R.sup.1 is hydrogen or a lower alkyl group which may be substituted with a substituent selected from the group consisting of hydroxy, carboxy, amino, guanidino, carbamoyl, mercapto, methylthio, phenyl, hydroxyphenyl, imidazolyl and indolyl, and R.sup.2 is hydrogen, or R.sup.1 and R.sup.2 are combined to form trimethylene.
摘要:
A semiconductor device includes an electrode pad provided on a semiconductor chip, in which the electrode pad includes aluminum (Al) as a major constituent and further including copper (Cu), a coupling ball primarily including Cu, the coupling ball is coupled to the electrode pad such that a plurality of layers of Cu and Al alloys are formed at a junction between the electrode pad and the coupling ball, and an encapsulating resin including a halogen of less than or equal to 1000 ppm, the encapsulating resin covering at least the electrode pad and the junction between the electrode pad and the coupling ball. A dimensional area of the plurality of layers of Cu and Al alloys is equal to or larger than 50% of a dimensional area of the junction between the electrode pad and the coupling ball. The plurality of layers of Cu and Al alloys includes a CuAl2 layer, a CuAl layer formed on the CuAl2 layer, and a layer including one of Cu9Al4 and Cu3Al2 formed on the CuAl layer.
摘要:
A semiconductor device includes an electrode pad provided on a semiconductor chip, in which the electrode pad includes aluminum (Al) as a major constituent and further including copper (Cu), a coupling ball primarily including Cu, the coupling ball is coupled to the electrode pad such that a plurality of layers of Cu and Al alloys are formed at a junction between the electrode pad and the coupling ball, and an encapsulating resin including a halogen of less than or equal to 1000 ppm, the encapsulating resin covering at least the electrode pad and the junction between the electrode pad and the coupling ball. A dimensional area of the plurality of layers of Cu and Al alloys is equal to or larger than 50% of a dimensional area of the junction between the electrode pad and the coupling ball. The plurality of layers of Cu and Al alloys includes a CuAl2 layer, a CuAl layer formed on the CuAl2 layer, and a layer including one of Cu9Al4 and Cu3Al2 formed on the CuAl layer.
摘要:
A method of manufacturing a semiconductor apparatus includes forming an electrode on a semiconductor device, forming a conductive bump on the electrode, placing an external wire on the conductive bump, and laser-welding the external wire and the conductive bump to establish electrical connection.