公开(公告)号：US06172923B2

公开(公告)日：2001-01-09

申请号：US09478617

申请日：2000-01-04

Applicant: Kwo-Jen Liu

Inventor： Kwo-Jen Liu

IPC: G11C700

CPC classification number: G11C17/12

Abstract: A method and apparatus for programmable read only memory with high speed differential sensing at low operating voltage. In one embodiment, a programmable memory cell is comprised of word line, a bitline, and a transistor. The transistor, representing a single binary digit (bit), has a gate coupled to a word line, a drain coupled to a bitline, and a source capable of being programmed to provide a logic level of 0 and a logic level of 1. By programming the source of the transistor, the bitline approximately equal capacitance for both logic level 0 and logic level 1 states.

公开(公告)号：US6147893A

公开(公告)日：2000-11-14

申请号：US238531

申请日：1999-01-27

Applicant: Kwo-Jen Liu

Inventor： Kwo-Jen Liu

IPC: G11C17/12 ,  G11C17/00

CPC classification number: G11C17/12

Abstract: A method and apparatus for programmable read only memory with high speed differential sensing at low operating voltage. In one embodiment, a programmable memory cell is comprised of word line, a bitline, and a transistor. The transistor, representing a single binary digit (bit), has a gate coupled to a word line, a drain coupled to a bitline, and a source capable of being programmed to provide a logic level of 0 and a logic level of 1. By programming the source of the transistor, the bitline approximately equal capacitance for both logic level 0 and logic level 1 states.

Abstract translation: 一种在低工作电压下具有高速差分感测的可编程只读存储器的方法和装置。 在一个实施例中，可编程存储单元由字线，位线和晶体管组成。 表示单个二进制数位（位）的晶体管具有耦合到字线的栅极，耦合到位线的漏极和能够被编程以提供逻辑电平0并且逻辑电平为1的源。通过 对晶体管的源极进行编程，逻辑电平0和逻辑电平1状态之间的位线几乎相等。