公开(公告)号：US20210134891A1

公开(公告)日：2021-05-06

申请号：US17122803

申请日：2020-12-15

Applicant: LG Display Co., Ltd.

Inventor： Seong-Joo LEE ,  Jung-Ho BANG ,  Jung-Sun BEAK ,  Sun-Mi LEE ,  Tae-Hwan KIM ,  Hyeon-Chul IM

IPC: H01L27/32 ,  G02F1/1335

Abstract: A display apparatus including two lines is provided. The two lines may extend in a first direction. A light-emitting device may be disposed between the two lines. Each line may be bent or extended in the direction of the device substrate which supports the light-emitting device. Thus, in the display apparatus, mixing of light emitted to the outside through the device substrate may be prevented. Therefore, in the display apparatus, the quality of realized image may be improved.

公开(公告)号：US20200243625A1

公开(公告)日：2020-07-30

申请号：US16848777

申请日：2020-04-14

Applicant: LG Display Co., Ltd.

Inventor： Jung-Sun BEAK ,  Jung-Ho BANG

IPC: H01L27/32 ,  H01L51/52 ,  H01L51/56 ,  H01L27/12

Abstract: Disclosed are an organic light emitting display device and a method of manufacturing the same. In the organic light emitting display, an anode connected to a thin film transistor and a bank disposed along the edge of the anode are simultaneously formed through one mask process, and a partition is formed to cover the side surface of the anode, thereby preventing damage to a pad cover electrode by an etching solution or etching gas of the anode without any separate pad protective film.

公开(公告)号：US20190267441A1

公开(公告)日：2019-08-29

申请号：US16409718

申请日：2019-05-10

Applicant: LG Display Co., Ltd.

Inventor： Jong-Won LEE ,  Jung-Ho BANG

IPC: H01L27/32 ,  H01L27/12

Abstract: A substrate for a display device and a display device including the same are disclosed. The substrate includes a first thin-film transistor including an oxide semiconductor layer, a second thin-film transistor spaced apart from the first thin-film transistor and including a polycrystalline semiconductor layer, and a storage capacitor including at least two storage electrodes. One of the at least two storage electrodes is located in the same plane and is formed of the same material as gate electrodes of the first thin-film transistor and the second thin-film transistor, and another one of the at least two storage electrodes is located in the same plane and is formed of the same material as source and drain electrodes of the first thin-film transistor and the second thin-film transistor. Accordingly, lower power consumption and a larger area of the substrate are realized.