Abstract:
A fabrication method is described which reduces processes of fabricating display devices such as an in-cell type display device. The display device includes: a gate line over a substrate; a data line over the substrate; a thin-film-transistor (TFT) including a drain electrode and a source electrode, the TFT located at a pixel defined by an intersection between the gate line and the data line; a first electrode layer located to be spaced apart from one of the source electrode and the drain electrode of the TFT; and a second electrode and a connection pattern over the first electrode, both the second electrode and the connection pattern of a same material, the connection pattern connecting one of the source electrode or the drain electrode of the TFT to the first electrode.