公开(公告)号：US20150214396A1

公开(公告)日：2015-07-30

申请号：US14572284

申请日：2014-12-16

Applicant: LG ELECTRONICS INC.

Inventor： Yujin LEE ,  Kwangsun JI ,  Seungjik LEE ,  Sehwon AHN

IPC: H01L31/0224 ,  H01L31/0376 ,  H01L31/18 ,  H01L31/20 ,  H01L31/0312

Abstract: A solar cell and a method for manufacturing the same are discussed. The method for manufacturing the solar cell includes forming an amorphous silicon layer on a back surface of a crystalline semiconductor substrate containing impurities of a first conductive type, performing a first diffusion process for diffusing impurities of a second conductive type opposite the first conductive type into a portion of the amorphous silicon layer to form an emitter region, and performing a second diffusion process for diffusing impurities of the first conductive type into a remaining portion except the portion of the amorphous silicon layer having the impurities of the second conductive type to form a back surface field region. When at least one of the first diffusion process and the second diffusion process is performed, the amorphous silicon layer is crystallized to form a silicon layer.

Abstract translation: 讨论太阳能电池及其制造方法。 太阳能电池的制造方法包括在包含第一导电类型的杂质的结晶半导体衬底的背面上形成非晶硅层，进行第一扩散处理，将与第一导电类型相反的第二导电类型的杂质扩散为 并且进行第二扩散处理，用于将第一导电类型的杂质扩散到除了具有第二导电类型的杂质的非晶硅层的部分之外的剩余部分中以形成背面 表面场区域。 当执行第一扩散处理和第二扩散处理中的至少一个时，非晶硅层被结晶以形成硅层。

公开(公告)号：US20160197204A1

公开(公告)日：2016-07-07

申请号：US14988513

申请日：2016-01-05

Applicant: LG ELECTRONICS INC.

Inventor： Seungjik LEE ,  Kwangsun JI ,  Yujin LEE ,  Sehwon AHN

IPC: H01L31/0288 ,  H01L31/077 ,  H01L31/0352 ,  H01L31/18 ,  H01L31/036

CPC classification number: H01L31/022441 ,  H01L31/0745 ,  H01L31/0747 ,  H01L31/1804 ,  H01L31/1872 ,  Y02E10/547 ,  Y02P70/521

Abstract: A solar cell and a method for manufacturing the same are discussed. The solar cell includes a crystalline semiconductor substrate containing impurities of a first conductive type, a tunnel layer positioned on the crystalline semiconductor substrate, a semiconductor layer which is formed on the tunnel layer, has a crystallinity less than the crystalline semiconductor substrate, and includes a first doped region of a second conductive type opposite the first conductive type and a second doped region containing impurities of the first conductive type at a higher concentration than that of the crystalline semiconductor substrate, a first electrode connected to the first doped region, and a second electrode connected to the second doped region.

Abstract translation: 讨论太阳能电池及其制造方法。 太阳能电池包括含有第一导电类型杂质的晶体半导体衬底，位于晶体半导体衬底上的隧道层，在隧道层上形成的半导体层的结晶度小于结晶半导体衬底，并且包括 具有与第一导电类型相反的第二导电类型的第一掺杂区和比第一掺杂区连接的第一电极和第二掺杂区，第二掺杂区含有比第一掺杂区连接的第一电极的第一导电类型的杂质更高的浓度; 电极连接到第二掺杂区域。