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    THERMOELECTRIC MODULE
    11.
    发明申请
    THERMOELECTRIC MODULE 有权

    公开(公告)号：US20210384399A1

    公开(公告)日：2021-12-09

    申请号：US17287654

    申请日：2019-10-23

    Applicant: LG INNOTEK CO., LTD.

    Inventor： Jin Gyeong PARK ,  Jeung Ook PARK ,  Yong Sang CHO

    IPC: H01L35/32 ,  H01L35/08 ,  H01L35/10 ,  H01L35/16

    Abstract: A thermoelectric module according to one embodiment of the present invention comprises: a first substrate; a thermoelectric element disposed on the first substrate; a second substrate disposed on the thermoelectric element and having a smaller area than the first substrate; a sealing part disposed on the first substrate and surrounding a side surface of the thermoelectric element; and a wire part connected to the thermoelectric element, drawn out through the sealing part, and supplying power to the thermoelectric element, wherein the sealing part has a through hole through which the wire part passes, and the through hole is disposed closer to the second substrate than the first substrate.

    THERMOELECTRIC DEVICE
    13.
    发明公开
    THERMOELECTRIC DEVICE 审中-公开

    公开(公告)号：US20240040929A1

    公开(公告)日：2024-02-01

    申请号：US18028016

    申请日：2021-07-20

    Applicant: LG INNOTEK CO., LTD.

    Inventor： Man Hue CHOI ,  Jong Min LEE ,  Se Woon LEE ,  Yong Sang CHO

    IPC: H10N10/17

    CPC classification number: H10N10/17

    Abstract: A thermoelectric device according to an embodiment of the present invention comprises: a first substrate; an insulating layer disposed on the first substrate; a first electrode unit disposed on the insulating layer; a first terminal electrode and a second terminal electrode disposed on the insulating layer and protruding from the first electrode unit toward the first outer side of the first substrate; a semiconductor structure disposed on the first electrode unit; a second electrode unit disposed on the semiconductor structure; and a second substrate unit disposed on the second electrode unit. The second substrate unit comprises a plurality of second substrates disposed away from one another. The first electrode unit comprises: a plurality of electrode groups respectively overlapping the plurality of second substrates vertically; and a first connection electrode connecting two different electrode groups among the plurality of electrode groups. The long side of the first connection electrode is longer than the long side of the first electrode included in the plurality of electrode groups. At least a part of the first connection electrode does not overlap the plurality of second substrates vertically.

    THERMOELECTRIC DEVICE
    14.
    发明申请
    THERMOELECTRIC DEVICE 有权

    公开(公告)号：US20230044428A1

    公开(公告)日：2023-02-09

    申请号：US17793835

    申请日：2021-10-25

    Applicant: LG INNOTEK CO., LTD.

    Inventor： Jong Min LEE ,  Yong Sang CHO ,  Man Hue CHOI

    IPC: H01L35/32

    Abstract: A thermoelectric device according to one embodiment of the present invention includes a substrate, a first insulating layer disposed on the substrate, a second insulating layer disposed on the first insulating layer and having an area smaller than an area of the first insulating layer, a plurality of first electrodes disposed on the second insulating layer, a plurality of semiconductor structures disposed on the plurality of first electrodes, and a plurality of second electrodes disposed on the plurality of semiconductor structures, wherein the second insulating layer includes an overlapping region in which the plurality of first electrodes, the plurality of second electrodes, and the plurality of semiconductor structures overlap vertically and a protruding pattern protruding from the overlapping region toward a first outer side the substrate.

    THERMOELECTRIC DEVICE
    15.
    发明申请
    THERMOELECTRIC DEVICE 有权

    公开(公告)号：US20220320406A1

    公开(公告)日：2022-10-06

    申请号：US17595968

    申请日：2020-05-28

    Applicant: LG INNOTEK CO., LTD.

    Inventor： Man Hue CHOI ,  Yong Sang CHO

    IPC: H01L35/20 ,  H01L35/32

    Abstract: A thermoelectric device according to one embodiment of the present invention includes a first insulating layer, a first substrate disposed on the first insulating layer, a second insulating layer disposed on the first substrate, a first electrode disposed on the second insulating layer, a P-type thermoelectric leg and an N-type thermoelectric leg disposed on the first electrode, a second electrode disposed on the P-type thermoelectric leg and the N-type thermoelectric leg, a third insulating layer disposed on the second electrode, and a second substrate disposed on the third insulating layer, wherein the first insulating layer includes a first aluminum oxide layer, the first substrate is an aluminum substrate, the second substrate is a copper substrate, the first substrate is a low temperature portion, and the second substrate is a high temperature portion.

    THERMOELECTRIC ELEMENT
    16.
    发明申请
    THERMOELECTRIC ELEMENT 有权

    公开(公告)号：US20210050504A1

    公开(公告)日：2021-02-18

    申请号：US17041695

    申请日：2019-04-02

    Applicant: LG INNOTEK CO., LTD.

    Inventor： Myoung Lae ROH ,  Jong Min LEE ,  Yong Sang CHO

    IPC: H01L35/32 ,  H01L35/24

    Abstract: A thermoelectric element according to an embodiment of the present invention comprises: a first metal substrate; a first resin layer disposed on the first metal substrate and in direct contact with the first metal substrate; a plurality of first electrodes disposed on the first resin layer; a plurality of thermoelectric legs disposed on the plurality of first electrodes; a plurality of second electrodes disposed on the plurality of thermoelectric legs; a second resin layer disposed on the plurality of second electrodes; and a second metal substrate disposed on the second resin layer, wherein the first resin layer comprises a polymeric resin and an inorganic filler and at least a part of side surfaces of the plurality of first electrodes are embedded in the first resin layer.

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