公开(公告)号：US06998275B2

公开(公告)日：2006-02-14

申请号：US10410091

申请日：2003-04-09

Applicant: Jin Zhao ,  M. Grant Albrecht ,  Qidu Jiang ,  Linlin Chen

Inventor： Jin Zhao ,  M. Grant Albrecht ,  Qidu Jiang ,  Linlin Chen

IPC: H01L21/20 ,  H01L21/44 ,  H01L21/26 ,  H01L21/00

CPC classification number: H01L28/75 ,  C23C16/34 ,  C23C16/56 ,  H01L21/28568

Abstract: The present invention is directed to a method of forming a diffusion barrier layer for a FeRAM capacitor, which includes depositing a chemical vapor deposited titanium nitride layer in a via, and treating the chemical vapor deposited titanium nitride layer using a plasma treatment substantially excluding hydrogen.

Abstract translation: 本发明涉及一种形成用于FeRAM电容器的扩散阻挡层的方法，其包括在通孔中沉积化学气相沉积的氮化钛层，以及使用基本上不含氢气的等离子体处理来处理化学气相沉积的氮化钛层。

公开(公告)号：US06932892B2

公开(公告)日：2005-08-23

申请号：US10695419

申请日：2003-10-27

Applicant: Linlin Chen ,  Thomas Taylor

Inventor： Linlin Chen ,  Thomas Taylor

IPC: H01L21/288 ,  H01L21/768 ,  H05K3/42 ,  C25D17/00

CPC classification number: H01L21/76843 ,  H01L21/2885 ,  H01L21/76868 ,  H01L21/76873 ,  H01L2221/1089 ,  H05K3/423

Abstract: A process for applying a metallization interconnect as to a semiconductor workpiece having a barrier layer deposited on a surface thereof is set forth. The process includes the forming of an ultra-thin metal seed layer on the barrier layer. The ultra-thin seed layer having a thickness of less than or equal to about 500 Angstroms. The ultra-thin seed layer is then enhanced by depositing additional metal thereon to provide an enhanced sed layer. The enhanced seed layer has a thickness at all points on sidewalls of substantially all recessed features distributed within the workpiece that is equal to or greater than about 10% of the nominal seed layer thickness over an exteriorly disposed surface of the workpiece.

Abstract translation: 提出了一种用于对具有沉积在其表面上的阻挡层的半导体工件施加金属化互连的方法。 该方法包括在阻挡层上形成超薄金属种子层。 超薄种子层具有小于或等于约500埃的厚度。 然后通过在其上沉积额外的金属以提供增强的sed层来增强超薄种子层。 增强的种子层在分布在工件内的基本上所有凹陷特征的侧壁上的所有点处具有等于或大于在工件的外部设置表面上的标称种子层厚度的约10％的厚度。

公开(公告)号：US20050173252A1

公开(公告)日：2005-08-11

申请号：US10980618

申请日：2004-11-02

Applicant: Linlin Chen

Inventor： Linlin Chen

IPC: C23C28/00 ,  C23C28/02 ,  C25D3/38 ,  C25D5/10 ,  C25D7/12 ,  H01L21/288 ,  H01L21/445 ,  H01L21/768 ,  H05K3/42

CPC classification number: C25D7/123 ,  C23C28/322 ,  C23C28/34 ,  C25D3/38 ,  C25D5/10 ,  H01L21/2885 ,  H01L21/76843 ,  H01L21/76868 ,  H01L21/76873 ,  H01L21/76877 ,  H01L2221/1089 ,  H05K3/423

Abstract: This invention employs a novel approach to the copper metallization of a workpiece, such as a semiconductor workpiece. In accordance with the invention, an alkaline electrolytic copper bath is used to electroplate copper onto a seed layer, electroplate copper directly onto a barrier layer material, or enhance an ultra-thin copper seed layer which has been deposited on the barrier layer using a deposition process such as PVD. The resulting copper layer provides an excellent conformal copper coating that fills trenches, vias, and other microstructures in the workpiece. When used for seed layer enhancement, the resulting copper seed layer provide an excellent conformal copper coating that allows the microstructures to be filled with a copper layer having good uniformity using electrochemical deposition techniques. Further, copper layers that are electroplated in the disclosed manner exhibit low sheet resistance and are readily annealed at low temperatures.

Abstract translation: 本发明采用了对诸如半导体工件的工件的铜金属化的新颖方法。 根据本发明，使用碱性电解铜浴将铜电镀到种子层上，将铜直接电镀到阻挡层材料上，或者使用沉积物增强已经沉积在阻挡层上的超薄铜籽晶层 工艺如PVD。 所得到的铜层提供了一种优异的保形铜涂层，其填充工件中的沟槽，通孔和其它微结构。 当用于种子层增强时，所得到的铜种子层提供了优异的共形铜涂层，其允许使用电化学沉积技术使微结构填充具有良好均匀性的铜层。 此外，以所公开的方式电镀的铜层表现出低的薄层电阻，并且在低温下容易退火。

公开(公告)号：US20050081744A1

公开(公告)日：2005-04-21

申请号：US10688420

申请日：2003-10-16

Applicant: John Klocke ,  Linlin Chen

Inventor： John Klocke ,  Linlin Chen

IPC: C25D20060101 ,  C25D3/38 ,  C25D5/48 ,  C25D7/12 ,  H01L21/288 ,  H01L21/768

CPC classification number: H01L21/2885 ,  C25D3/38 ,  C25D5/48 ,  C25D7/123 ,  H01L21/76877

Abstract: Disclosed are electroplating compositions and methods for filling recessed microstructures of a microelectronic workpiece, such as a semiconductor wafer, with metallization. The electroplating compositions may comprise a mixture of copper and sulfuric acid wherein the ratio of copper concentration to sulfuric acid concentration is equal to from about 0.3 to about 0.8 g/L (grams per liter of solution). The disclosed electroplating compositions may also comprise a mixture of copper and sulfuric acid wherein the copper concentration is near its solubility limit when the sulfuric acid concentration is from about 65 to about 150 g/L. Such electroplating compositions may also include conventional additives, such as accelerators, suppressors, halides and/or levelers. Methods for electrochemically depositing conductive materials in features, such as trenches and/or contact holes formed on semiconductor workpieces are disclosed, including methods suited for use in multiple anode reactors using the disclosed electroplating solutions.

Abstract translation: 公开了电镀组合物和用于填充诸如半导体晶片的微电子工件的凹陷微结构与金属化的方法。 电镀组合物可以包含铜和硫酸的混合物，其中铜浓度与硫酸浓度之比等于约0.3至约0.8g / L（克/升溶液）。 所公开的电镀组合物还可以包含铜和硫酸的混合物，其中当硫酸浓度为约65至约150g / L时，铜浓度接近其溶解度极限。 这样的电镀组合物还可以包括常规的添加剂，例如促进剂，抑制剂，卤化物和/或矫直剂。 公开了在半导体工件上形成的诸如沟槽和/或接触孔的特征中的电化学沉积导电材料的方法，包括适用于使用所公开的电镀溶液的多个阳极反应器的方法。

公开(公告)号：US06306276B1

公开(公告)日：2001-10-23

申请号：US09319632

申请日：1999-12-10

Applicant: Ken Nobe ,  Morton Schwartz ,  Linlin Chen ,  No Sang Myung

Inventor： Ken Nobe ,  Morton Schwartz ,  Linlin Chen ,  No Sang Myung

IPC: C25D356

CPC classification number: C25D3/562

Abstract: The present invention relates to the electrodeposition of transition metal and rare earth alloys from aqueous solutions to form thin films. The present invention which comprises the preparation of suitable mixtures of water soluble compounds containing the desired transition metal (TM) and rare earth (RE) elements, establishing appropriate bath conditions and applying specific current densities across the bath solution to cause a film with the desired properties to be deposited on a target substrate.

Abstract translation: 本发明涉及从水溶液中电沉积过渡金属和稀土合金以形成薄膜。 本发明包括制备含有所需过渡金属（TM）和稀土（RE）元素的水溶性化合物的合适混合物的混合物，建立适当的浴条件，并在整个浴溶液中施加比电流密度以引起具有期望的 要沉积在靶基质上的性质。

公开(公告)号：US20100116671A1

公开(公告)日：2010-05-13

申请号：US11543270

申请日：2006-10-03

Applicant: Linlin Chen ,  Gregory J. Wilson ,  Paul R. McHugh ,  Robert A. Weaver ,  Thomas L. Ritzdorf

Inventor： Linlin Chen ,  Gregory J. Wilson ,  Paul R. McHugh ,  Robert A. Weaver ,  Thomas L. Ritzdorf

IPC: C25D21/12

CPC classification number: H01L21/76868 ,  C25D3/38 ,  C25D5/08 ,  C25D5/10 ,  C25D5/50 ,  C25D7/123 ,  C25D17/02 ,  C25D17/10 ,  C25D17/12 ,  H01L21/288 ,  H01L21/2885 ,  H01L21/76843 ,  H01L21/76873 ,  H01L21/76877 ,  H01L2221/1089 ,  Y10S204/07 ,  Y10T428/12493

Abstract: A process for metallization of a workpiece, such as a semiconductor workpiece. In an embodiment, an alkaline electrolytic copper bath is used to electroplate copper onto a seed layer, electroplate copper directly onto a barrier layer material, or enhance an ultra-thin copper seed layer which has been deposited on the barrier layer using a deposition process such as PVD. The resulting copper layer provides an excellent conformal copper coating that fills trenches, vias, and other microstructures in the workpiece. When used for seed layer enhancement, the resulting copper seed layer provide an excellent conformal copper coating that allows the microstructures to be filled with a copper layer having good uniformity using electrochemical deposition techniques. Further, copper layers that are electroplated in the disclosed manner exhibit low sheet resistance and are readily annealed at low temperatures.

Abstract translation: 用于对诸如半导体工件的工件进行金属化的方法。 在一个实施方案中，使用碱性电解铜浴将铜电镀到种子层上，将铜直接电镀到阻挡层材料上，或者使用沉积方法增强已经沉积在阻挡层上的超薄铜籽晶层 作为PVD。 所得到的铜层提供了一种优异的保形铜涂层，其填充工件中的沟槽，通孔和其它微结构。 当用于种子层增强时，所得到的铜种子层提供了优异的共形铜涂层，其允许使用电化学沉积技术使微结构填充具有良好均匀性的铜层。 此外，以所公开的方式电镀的铜层表现出低的薄层电阻，并且在低温下容易退火。

公开(公告)号：US06908851B2

公开(公告)日：2005-06-21

申请号：US10463948

申请日：2003-06-17

Applicant: Yaojian Leng ,  Linlin Chen

Inventor： Yaojian Leng ,  Linlin Chen

IPC: H01L21/288 ,  H01L21/44 ,  H01L21/4763 ,  H01L21/768

CPC classification number: H01L21/288 ,  H01L21/76849

Abstract: A method to reduce the copper corrosion of copper interconnects by forming 70 at least one conductive displacement plating layer on the copper interconnects. Also, a method to eliminate the copper corrosion of copper interconnects by forming 70 at least one conductive displacement plating layer on the copper interconnects.

Abstract translation: 一种通过在铜互连上形成70个至少一个导电位移镀层来减少铜互连铜腐蚀的方法。 另外，通过在铜互连上形成70个至少一个导电位移镀层来消除铜互连铜腐蚀的方法。

公开(公告)号：US06638410B2

公开(公告)日：2003-10-28

申请号：US10302711

申请日：2002-11-22

Applicant: Linlin Chen ,  Thomas Taylor

Inventor： Linlin Chen ,  Thomas Taylor

IPC: C25D510

CPC classification number: H01L21/76843 ,  H01L21/2885 ,  H01L21/76868 ,  H01L21/76873 ,  H01L2221/1089 ,  H05K3/423

Abstract: A process for applying a metallization interconnect structure to a semiconductor workpiece having a barrier layer deposited on a surface thereof is set forth. The process includes the forming of an ultra-thin metal seed layer on the barrier layer. The ultra-thin seed layer having a thickness of less than or equal to about 500 Angstroms. The ultra-thin seed layer is then enhanced by depositing additional metal thereon to provide an enhanced seed layer. The enhanced seed layer has a thickness at all points on sidewalls of substantially all recessed features distributed within the workpiece that is equal to or greater than about 10% of the nominal seed layer thickness over an exteriorly disposed surface of the workpiece.

Abstract translation: 阐述了将金属化互连结构应用于具有沉积在其表面上的阻挡层的半导体工件的方法。 该方法包括在阻挡层上形成超薄金属种子层。 超薄种子层具有小于或等于约500埃的厚度。 然后通过在其上沉积附加金属以提供增强的种子层来增强超薄籽晶层。 增强的种子层在分布在工件内的基本上所有凹陷特征的侧壁上的所有点处具有等于或大于在工件的外部设置表面上的标称种子层厚度的约10％的厚度。

公开(公告)号：US06290833B1

公开(公告)日：2001-09-18

申请号：US09387033

申请日：1999-08-31

Applicant: Linlin Chen

Inventor： Linlin Chen

IPC: C25D510

CPC classification number: C25D7/123 ,  C23C28/322 ,  C23C28/34 ,  C25D3/38 ,  C25D5/10 ,  H01L21/2885 ,  H01L21/76843 ,  H01L21/76868 ,  H01L21/76873 ,  H01L21/76877 ,  H01L2221/1089 ,  H05K3/423

Abstract: This invention employs a novel approach to the copper metallization of a workpiece, such as a semiconductor workpiece. In accordance with the invention, an alkaline electrolytic copper bath is used to electroplate copper onto a seed layer, electroplate copper directly onto a barrier layer material, or enhance an ultra-thin copper seed layer which has been deposited on the barrier layer using a deposition process such as PVD. The resulting copper layer provides an excellent conformal copper coating that fills trenches, vias, and other microstructures in the workpiece. When used for seed layer enhancement, the resulting copper seed layer provide an excellent conformal copper coating that allows the microstructures to be filled with a copper layer having good uniformity using electrochemical deposition techniques. Further, copper layers that are electroplated in the disclosed manner exhibit low sheet resistance and are readily annealed at low temperatures.

Abstract translation: 本发明采用了对诸如半导体工件的工件的铜金属化的新颖方法。 根据本发明，使用碱性电解铜浴将铜电镀到种子层上，将铜直接电镀到阻挡层材料上，或者使用沉积物增强已经沉积在阻挡层上的超薄铜籽晶层 工艺如PVD。 所得到的铜层提供了一种优异的保形铜涂层，其填充工件中的沟槽，通孔和其它微结构。 当用于种子层增强时，所得到的铜种子层提供了优异的共形铜涂层，其允许使用电化学沉积技术使微结构填充具有良好均匀性的铜层。 此外，以所公开的方式电镀的铜层表现出低的薄层电阻，并且在低温下容易退火。

公开(公告)号：US07115196B2

公开(公告)日：2006-10-03

申请号：US10377397

申请日：2003-02-27

Applicant: Linlin Chen ,  Gregory J. Wilson ,  Paul R. McHugh ,  Robert A. Weaver ,  Thomas L. Ritzdorf

Inventor： Linlin Chen ,  Gregory J. Wilson ,  Paul R. McHugh ,  Robert A. Weaver ,  Thomas L. Ritzdorf

IPC: C25D7/12 ,  C25D5/10

CPC classification number: H01L21/76868 ,  C25D3/38 ,  C25D5/08 ,  C25D5/10 ,  C25D5/50 ,  C25D7/123 ,  C25D17/02 ,  C25D17/10 ,  C25D17/12 ,  H01L21/288 ,  H01L21/2885 ,  H01L21/76843 ,  H01L21/76873 ,  H01L21/76877 ,  H01L2221/1089 ,  Y10S204/07 ,  Y10T428/12493

Abstract: A process for metallization of a workpiece, such as a semiconductor workpiece. In an embodiment, an alkaline electrolytic copper bath is used to electroplate copper onto a seed layer, electroplate copper directly onto a barrier layer material, or enhance an ultra-thin copper seed layer which has been deposited on the barrier layer using a deposition process such as PVD. The resulting copper layer provides an excellent conformal copper coating that fills trenches, vias, and other microstructures in the workpiece. When used for seed layer enhancement, the resulting copper seed layer provide an excellent conformal copper coating that allows the microstructures to be filled with a copper layer having good uniformity using electrochemical deposition techniques. Further, copper layers that are electroplated in the disclosed manner exhibit low sheet resistance and are readily annealed at low temperatures.

Abstract translation: 用于对诸如半导体工件的工件进行金属化的工艺。 在一个实施方案中，使用碱性电解铜浴将铜电镀到种子层上，将铜直接电镀到阻挡层材料上，或者使用沉积方法增强已经沉积在阻挡层上的超薄铜籽晶层 作为PVD。 所得到的铜层提供了一种优异的保形铜涂层，其填充工件中的沟槽，通孔和其它微结构。 当用于种子层增强时，所得到的铜种子层提供了优异的共形铜涂层，其允许使用电化学沉积技术使微结构填充具有良好均匀性的铜层。 此外，以所公开的方式电镀的铜层表现出低的薄层电阻，并且在低温下容易退火。