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公开(公告)号：US08547727B2
公开(公告)日：2013-10-01
申请号：US13119932
申请日：2008-12-12
申请人： Wei Wu , John Paul Strachan , R. Stanley Williams , Marco Florentino , Shih-Yuan Wang , Nathaniel J. Quitoriano , Hans S. Cho , Julien Borghetti , Sagi Varghese Mathai
发明人： Wei Wu , John Paul Strachan , R. Stanley Williams , Marco Florentino , Shih-Yuan Wang , Nathaniel J. Quitoriano , Hans S. Cho , Julien Borghetti , Sagi Varghese Mathai
IPC分类号： G11C11/00
CPC分类号： H01L45/145 , H01L27/2472 , H01L45/08 , H01L45/1206 , H01L45/1226 , H01L45/14 , H01L45/146 , H01L45/147
摘要： A memristive routing device includes a memristive matrix, mobile dopants moving with the memristive matrix in response to programming electrical fields and remaining stable within the memristive matrix in the absence of the programming electrical fields; and at least three electrodes surrounding the memristive matrix. A method for tuning electrical circuits with a memristive device includes measuring a circuit characteristic and applying a programming voltage to the memristive device which causes motion of dopants within the memristive device to alter the circuit characteristic. A method for increasing a switching speed of a memristive device includes drawing dopants from two geometrically separated locations into close proximity to form two conductive regions and then switching the memristive device to a conductive state by applying a programming voltage which rapidly merges the two conductive regions to form a conductive pathway between a source electrode and a drain electrode.
摘要翻译： 忆阻路由设备包括忆阻矩阵，响应于编程电场而与忆阻矩阵一起移动的移动掺杂物，并且在没有编程电场的情况下在忆阻矩阵内保持稳定; 以及围绕忆阻矩阵的至少三个电极。 一种用忆阻器件调谐电路的方法包括测量电路特性并将编程电压施加到忆阻器件，其使得忆阻器件内的掺杂剂的运动改变电路特性。 用于增加忆阻器件的切换速度的方法包括将来自两个几何分离位置的掺杂剂绘制成紧密接近形成两个导电区域，然后通过施加快速合并两个导电区域的编程电压将忆阻器件切换到导通状态 在源电极和漏电极之间形成导电路径。
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公开(公告)号：US08546898B2
公开(公告)日：2013-10-01
申请号：US13259196
申请日：2009-09-29
CPC分类号： H01L27/14609 , G11C7/005 , G11C13/0007 , G11C13/0014 , G11C13/047 , G11C2213/55 , G11C2213/56 , G11C2213/77 , H01L27/14621 , H01L27/307
摘要： An optoelectronic memory cell has a transparent top electrode, a photoactive layer, a latching layer, and a bottom electrode. The photoactive layer absorbs photons transmitted through the top electrode and generates charge carriers. During light exposure, the latching layer changes its resistance under an applied electric field in response to the generation of charge carriers in the photoactive layer.
摘要翻译： 光电存储单元具有透明的顶电极，光敏层，闭锁层和底电极。 光活性层吸收通过顶部电极传输的光子并产生电荷载体。 在曝光期间，响应于光活性层中的电荷载体的产生，锁存层在施加的电场下改变其电阻。
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公开(公告)号：US08519372B2
公开(公告)日：2013-08-27
申请号：US13259173
申请日：2009-07-30
IPC分类号： H01L29/02
CPC分类号： H01L29/417 , B82Y10/00 , H01L27/101 , H01L27/2463 , H01L45/08 , H01L45/1233 , H01L45/145 , H01L45/146
摘要： A nanoscale switching device is constructed such that an electroforming process is not needed to condition the device for normal switching operations. The switching device has an active region disposed between two electrodes. The active region has at least one switching layer formed of a switching material capable of transporting dopants under an electric field, and at least one conductive layer formed of a dopant source material containing dopants that can drift into the switching layer under an electric field. The switching layer has a thickness about 6 nm or less.
摘要翻译： 构造纳米级开关器件，使得不需要电铸工艺来调节器件以进行正常的开关操作。 开关装置具有设置在两个电极之间的有源区域。 有源区具有由能够在电场下输送掺杂剂的开关材料形成的至少一个开关层，以及由掺杂剂源材料形成的至少一个导电层，所述掺杂剂源材料含有可在电场下漂移到开关层中的掺杂剂。 开关层的厚度为6nm以下。
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14.发明授权公开(公告)号：US08347726B2
公开(公告)日：2013-01-08
申请号：US11739853
申请日：2007-04-25
摘要： A sensing device includes a nanowire configured to deform upon exposure to a force, and a transducer for converting the deformation into a measurement. The nanowire has two opposed ends; and the transducer is operatively connected to one of the two opposed ends of the nanowire. The other of the two opposed ends of the nanowire is freestanding.
摘要翻译： 感测装置包括构造成在暴露于力时变形的纳米线和用于将变形转换成测量的换能器。 纳米线有两个相反的两端; 并且换能器可操作地连接到纳米线的两个相对端中的一个。 纳米线的两个相对端的另一个是独立的。
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15.发明授权Electric-field-enhancement structures including dielectric particles, apparatus including same, and methods of use 失效包括电介质颗粒的电场增强结构，包括其的设备和使用方法公开(公告)号：US07696477B2
公开(公告)日：2010-04-13
申请号：US11724409
申请日：2007-03-14
申请人： Mihail Sigalas , R. Stanley Williams , David A. Fattal , Shih-Yuan Wang , Raymond G. Beausoleil
发明人： Mihail Sigalas , R. Stanley Williams , David A. Fattal , Shih-Yuan Wang , Raymond G. Beausoleil
IPC分类号： G01N23/00
CPC分类号： G01N21/658 , Y10S977/70 , Y10S977/701 , Y10S977/72 , Y10S977/723
摘要： In one aspect of the present invention, an electric-field-enhancement structure is disclosed. The electric-field-enhancement structure includes a substrate and an ordered arrangement of dielectric particles having at least two adjacent dielectric particles spaced from each other a controlled distance. The controlled distance is selected so that when a resonance mode is excited in each of the at least two adjacent dielectric particles responsive to excitation electromagnetic radiation, each of the resonance modes interacts with each other to result in an enhanced electric field between the at least two adjacent dielectric particles. Other aspects of the present invention are electric-field-enhancement apparatuses that utilize the described electric-field-enhancement structures, and methods of enhancing an electric field between adjacent dielectric particles.
摘要翻译： 在本发明的一个方面，公开了一种电场增强结构。 电场增强结构包括基底和具有至少两个相邻的电介质颗粒彼此间隔可控距离的介质颗粒的有序布置。 控制距离被选择为使得当谐振模式在响应于激发电磁辐射的至少两个相邻电介质颗粒中的每一个中被激发时，每个谐振模式彼此相互作用以在至少两个之间产生增强的电场 相邻的电介质颗粒。 本发明的其他方面是利用所述电场增强结构的电场增强装置以及增强相邻电介质颗粒之间的电场的方法。
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公开(公告)号：US20090189145A1
公开(公告)日：2009-07-30
申请号：US12253152
申请日：2008-10-16
CPC分类号： H01L31/0384 , H01L21/0237 , H01L21/02433 , H01L21/0254 , H01L21/02603 , H01L21/02617 , H01L21/02639 , H01L21/02645 , H01L21/02664 , H01L31/035281 , H01L31/103 , H01L31/105 , Y02E10/50
摘要： A photodetector includes a first layer, a second layer and a plurality of nanowires established between the first and second layers. At least some of the plurality of nanowires have a bandgap that is different from a bandgap of at least some other of the plurality of nanowires.
摘要翻译： 光电检测器包括在第一和第二层之间建立的第一层，第二层和多个纳米线。 多个纳米线中的至少一些具有与多个纳米线中的至少一些其他纳米线的带隙不同的带隙。
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公开(公告)号：US20090034050A1
公开(公告)日：2009-02-05
申请号：US11831275
申请日：2007-07-31
CPC分类号： H01S5/50 , G02B5/008 , H01S3/1608 , H01S5/10 , H01S5/1046
摘要： A Fresnel antenna includes a plurality of Fresnel elements spaced to selectively attenuate electromagnetic waves having a predetermined wavelength, selected wavelengths, or range of wavelengths, and to concentrate electromagnetic waves having a predetermined wavelength, selected wavelengths, or range of wavelengths other than the attenuated wavelengths.
摘要翻译： 菲涅耳天线包括多个菲涅尔元件，间隔开以选择性地衰减具有预定波长，选定波长或波长范围的电磁波，并且将具有预定波长，选定波长或不同于衰减波长的波长范围的电磁波集中 。
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公开(公告)号：US20090001498A1
公开(公告)日：2009-01-01
申请号：US11819226
申请日：2007-06-26
申请人： Shih-Yuan Wang , Michael Renne Ty Tan , Alexandre M. Bratkovski , R. Stanley Williams , Nobuhiko Kobayashi
发明人： Shih-Yuan Wang , Michael Renne Ty Tan , Alexandre M. Bratkovski , R. Stanley Williams , Nobuhiko Kobayashi
IPC分类号： G02B6/26
CPC分类号： G02B6/4202 , B82Y20/00 , G02B6/305 , G02B6/4236 , H01L31/03529 , Y02E10/50 , Y10S977/765
摘要： Nanowire-based photodiodes are disclosed. The photodiodes include a first optical waveguide having a tapered first end, a second optical waveguide having a tapered second end, and at least one nanowire comprising at least one semiconductor material connecting the first and second ends in a bridging configuration. Methods of making the photodiodes are also disclosed.
摘要翻译： 公开了基于纳米线的光电二极管。 光电二极管包括具有锥形第一端的第一光波导，具有锥形第二端的第二光波导和至少一个纳米线，其包括以桥接形式连接第一端和第二端的至少一个半导体材料。 还公开了制造光电二极管的方法。
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公开(公告)号：US09323217B2
公开(公告)日：2016-04-26
申请号：US13142484
申请日：2008-12-29
申请人： Shih-Yuan Wang , Alexandre M. Bratkovski , R. Stanley Williams , Jingjing Li , Wei Wu , Philip J. Kuekes
发明人： Shih-Yuan Wang , Alexandre M. Bratkovski , R. Stanley Williams , Jingjing Li , Wei Wu , Philip J. Kuekes
CPC分类号： G03H1/02 , G02B1/007 , G03H1/2249 , G03H1/2294 , G03H2001/0224 , G03H2210/30 , G03H2225/22 , G03H2225/32 , G03H2225/33
摘要： A negative index material (or metamaterial) crossbar includes a first layer of approximately parallel nanowires and a second layer of approximately parallel nanowires that overlay the nanowires in the first layer. The nanowires in the first layer are approximately perpendicular in orientation to the nanowires in the second layer. Each nanowire of the first layer and each nanowire of the second layer has substantially regularly spaced fingers. The crossbar further includes resonant elements at nanowire intersections between the respective layers. Each resonant element includes two fingers of a nanowire in the first layer and two fingers of a nanowire in the second layer.
摘要翻译： 负指数材料（或超材料）横杆包括大致平行的纳米线的第一层和覆盖第一层中的纳米线的大致平行的纳米线的第二层。 第一层中的纳米线在第二层中与纳米线的取向近似垂直。 第一层的每个纳米线和第二层的每个纳米线具有基本上规则间隔的指状物。 横杆还包括在各层之间的纳米线交叉处的共振元件。 每个谐振元件包括第一层中的纳米线的两个指状物和第二层中的纳米线的两个指状物。
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公开(公告)号：US08283556B2
公开(公告)日：2012-10-09
申请号：US12247860
申请日：2008-10-08
CPC分类号： H01L31/109 , B82Y20/00 , G02B5/003 , H01L31/022425 , H01L31/035227 , H01L31/0543 , H01L31/072 , Y02E10/52
摘要： A nanowire-based photonic device and an array employ nanowires connecting between coaxially arranged electrodes in a non-uniform manner along a vertical extent of the electrodes. The device includes a pair of the electrodes separated by a circumferential gap. The nanowires chaotically emanate from an inner electrode of the pair and connect across the circumferential gap to an outer electrode of the pair. The array includes an outer electrode having an interconnected pattern of cells and inner electrodes, one per cell, arranged coaxially with and separated from the outer electrode by respective circumferential gaps. The nanowires chaotically emanate from the inner electrodes and connect across the respective circumferential gaps of the cells to the outer electrode. The device and the arrays further include a semiconductor junction between the electrodes.
摘要翻译： 基于纳米线的光子器件和阵列采用沿着电极的垂直范围以不均匀方式连接在同轴布置的电极之间的纳米线。 该装置包括由圆周间隙分开的一对电极。 纳米线从该对的内部电极混沌地发出并且跨越圆周间隙连接到该对的外部电极。 该阵列包括外部电极，其具有电池和内部电极的互连图案，每个电池单元与外部电极同轴地布置并与外部电极分开，并由其间隔开。 纳米线从内部电极混沌地发散并且跨过电池的各个周向间隙连接到外部电极。 器件和阵列还包括电极之间的半导体结。
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