摘要:
A method and system for testing a read transducer are described. The read transducer includes a read sensor fabricated on a wafer. A system includes a test structure that resides on the wafer. The test structure includes a test device and a heater. The test device corresponds to the read sensor. The heater is in proximity to the test device and is configured to heat the test device substantially without heating the read sensor. Thus, the test structure allows for on-wafer testing of the test device at a plurality of temperatures above an ambient temperature.
摘要:
A data storage medium comprises a plurality of data regions, and a plurality of servo regions configured to provide positioning information to a reading device. Each of the plurality of data regions corresponds to more than one of the plurality of servo regions. The more than one of the plurality of servo regions are configured to provide positioning information to the reading device at discrete times corresponding to a data operation of a corresponding data region.
摘要:
A magnetoresistive sensor having a free layer biased by an in stack bias layer that comprises a layer of antiferromagnetic material. The bias layer can be IrMnCr, IrMn or some other antiferromagnetic material. The free layer is a synthetic free layer having first and second magnetic layers antiparallel coupled across an AP coupling layer. The first magnetic layer is disposed adjacent to a spacer or barrier layer and the second magnetic layer is exchange coupled with the IrMnCr bias layer. The bias layer biases the magnetic moments of the free layer in desired directions parallel with the ABS without pinning the magnetic moments of the free layer.
摘要:
An embodiment of the invention is a magnetic head with overlaid lead pads that contact the top surface of the sensor between the hardbias structures and do not contact the hardbias structures which are electrically insulated from direct contact with the sensor. The lead pad contact area on the top of the sensor is defined by sidewall deposition of a conductive material to form leads pads on a photoresist prior to formation of the remainder of the leads. The conductive material for the lead pads is deposited at a shallow angle to maximize the sidewall deposition on the photoresist, then ion-milled at a high angle to remove the conductive material from the field while leaving the sidewall material. An insulation layer is deposited on the lead material at a high angle, then milled at a shallow angle to remove insulation from the sidewall.
摘要:
A current perpendicular to plane (CPP) having hard magnetic bias layers located at the back of the sensor, opposite the air bearing surface. The bias layer is magnetostatically coupled with the free layer to bias the free layer in a desired direction parallel with the ABS. First and second magnetic shield layers may be provided at either lateral side of the sensor to provide exceptional track width definition. The placement of the bias layer at the back of the sensor makes possible the addition of magnetic shields at the sides of the sensor.
摘要:
A current-perpendicular-to the-plane (CPP) magnetoresistive device, such as a magnetic tunnel junction (MTJ), is formed by patterning a capping layer (e.g., using resist) in the shape of a central region of an underlying free ferromagnetic layer that in turn resides over additional layers of the MTJ. Side regions of the capping layer are removed by ion milling or etching down into the free ferromagnetic layer. Unmasked side regions of the ferromagnetic layer are then oxidized to render them locally non-ferromagnetic and electrically insulating.
摘要:
A magnetoresistive sensor for use in a data storage device has a recessed sensing element (magnetic tunnel junction, CPP spin valve, etc.) with an exchange biased sensing ferromagnetic (free) layer, and a flux guide that magnetically connects the sensing element to a sensing surface of the sensor. The free layer is selectively exchange biased by a layer of exchange bias material placed under non-active regions of the free layer that lie outside the sensing element and flux guide track widths. The flux guide is provided by extending the free layer from a forward edge of the sensing element to the sensor surface. Advantageously, the sensing element and the flux guide have equal track width so that magnetic flux directed from the flux guide into the sensing element is not diluted with consequent loss of sensitivity.
摘要:
A method and system for providing a magnetic transducer having an air-bearing surface (ABS) is described. The magnetic read transducer includes a first shield, a magnetoresistive sensor, at least one soft magnetic side shield, and a second shield. The magnetoresistive sensor includes a sensor layer having at least one edge in the track width direction along the ABS. The at least one soft magnetic side shield is adjacent to the at least one edge of the sensor layer. The at least one soft magnetic side shield has a full film permeability of at least ten. The magnetoresistive sensor is between the first shield and the second shield and free of an in-stack hard bias layer.
摘要:
A magnetic head according to one embodiment includes a first magnetic shield; a first insulation layer disposed above said first magnetic shield; a plurality of sensor layers disposed above said first insulation layer; two electrical leads overlying a majority of a surface of the sensor layers, the electrical leads being formed of a magnetic material and serving as a second magnetic shield; and a read width insulation member disposed above said sensor layers and between said two electrically conductive members, the read width insulation members lying in a common plane with the electrically conductive members, the common plane being oriented parallel to a plane of deposition of the read width insulation member. Other systems and methods are also presented.
摘要:
A current perpendicular to plane (CPP) magnetoresistive sensor having a current path defined by first and second overlying insulation layers between which an electrically conductive lead makes content with a surface of the sensor stack. The current path being narrower than the width of the sensor stack allows the outer edges of the sensor stack to be moved outside of the active area of the sensor. This results in a sensor that is unaffected by damage at outer edges of the sensor layers. The sensor stack includes a free layer that is biased by direct exchange coupling with a layer of antiferromagnetic material (AFM layer). The strength of the exchange field can be controlled by adding Cr to the AFM material to ensure that the exchange field is sufficiently weak to avoid pinning the free layer.