公开(公告)号：US06169299A

公开(公告)日：2001-01-02

申请号：US09258818

申请日：1999-02-26

申请人： Sachiko Kawaji ,  Toshio Murata ,  Masayasu Ishiko ,  Tsutomu Uesugi

发明人： Sachiko Kawaji ,  Toshio Murata ,  Masayasu Ishiko ,  Tsutomu Uesugi

IPC分类号： H01L2974

CPC分类号： H01L29/749 ,  H01L29/0649 ,  H01L29/7455

摘要： The MOS gate thyristor of the present invention has a p+ type anode layer (first semiconductor layer), an n− type base region (second semiconductor layer) with the function of acting as a drift layer, a p− type base region (third semiconductor layer), and an n+ type impurity diffusion layer (fourth semiconductor layer) with the function of acting as a source region. On the surface of the base region, an n+ type floating emitter region (fifth semiconductor layer) is formed, while a first channel region (sixth semiconductor layer) is formed between the impurity diffusion layer and the floating emitter region. At the lower ends of the fourth semiconductor layer and the first channel region an insulation layer is formed. The insulation layer acts to suppress the operation of a parasitic thyristor to ensure a reliable turn-off operation of the transistor. A portion of the semiconductor extends from the n+ type floating emitter region and lies underneath the insulation layer in the direction alongside the principal plane of the p+ type anode layer. The extended semiconductor portion helps broaden the carrier injection path.

摘要翻译： 本发明的MOS栅极晶闸管具有p +型阳极层（第一半导体层），具有作为漂移层的功能的n型基极区域（第二半导体层），p型基极区域（第三半导体层 层）和具有作为源极区域的功能的n +型杂质扩散层（第四半导体层）。 在基极区域的表面上形成n +型浮置发射极区域（第五半导体层），同时在杂质扩散层和浮置发射极区域之间形成第一沟道区域（第六半导体层）。 在第四半导体层的下端和第一沟道区域形成绝缘层。 绝缘层用于抑制寄生晶闸管的操作，以确保晶体管的可靠的关断操作。 半导体的一部分从n +型浮置发射极区域延伸并且位于绝缘层下方沿着p +型阳极层的主平面的方向。 延伸的半导体部分有助于拓宽载流子注入路径。

公开(公告)号：US5093691A

公开(公告)日：1992-03-03

申请号：US525398

申请日：1990-05-18

申请人： Koji Utsugi ,  Masayasu Ishiko

发明人： Koji Utsugi ,  Masayasu Ishiko

IPC分类号： C09K11/06 ,  H01L51/50 ,  H05B33/12 ,  H05B33/14

CPC分类号： H05B33/14 ,  C09K11/06

摘要： An organic thin-film electroluminescence (=EL) device is provided. This device includes as a main constituent of an organic luminescent thin-film layer sandwiched between a couple of electrodes at least one of which is transparent, a naphthalimide derivative represented by the formula (I): ##STR1## wherein R.sub.1, R.sub.2 and R.sub.3 are identical or different from each other and are selected from the group consisting of hydrogen, an alkyl group, an aryl group, a substituted alkyl group, a substituted aryl group, an alkoxyl group, an amino group and an acylamino group.