公开(公告)号：US07790484B2

公开(公告)日：2010-09-07

申请号：US11446982

申请日：2006-06-06

申请人： Masaya Ishida ,  Atsushi Ogawa ,  Daisuke Hanaoka

发明人： Masaya Ishida ,  Atsushi Ogawa ,  Daisuke Hanaoka

IPC分类号： H01L21/00

CPC分类号： H01S5/0021 ,  H01L2224/48091 ,  H01L2224/73265 ,  H01L2924/3025 ,  H01S5/0201 ,  H01S5/02212 ,  H01S5/0222 ,  H01S5/02272 ,  H01S5/02276 ,  H01S5/22 ,  H01S5/32341 ,  H01L2924/00014 ,  H01L2924/00

摘要： A method for manufacturing a laser device includes fixing a laser chip to a holder via a metal having a low melting point by melting the metal at a temperature higher than the melting point, heating the holder to which the laser chip is fixed at a heat treatment temperature that is lower than the melting point and, thereafter, sealing the laser chip by covering the holder to which the laser chip is fixed with a cap. The heating step may be performed in an atmosphere in which ozone is generated or an atmosphere in which oxygen plasma is generated. Furthermore, the holder to which the laser chip is fixed is covered with a cap to make a hermetically sealed package in dry air or an inert gas, and then an ultraviolet ray is irradiated into the package while it is heated.

摘要翻译： 一种激光装置的制造方法，其特征在于，具有：通过在高于熔点的温度下熔融金属，通过熔融金属，将激光芯片固定在保持器上，加热激光芯片固定的保持体 温度低于熔点，然后通过用盖盖住激光芯片固定的保持器来密封激光芯片。 加热步骤可以在产生臭氧的气氛或产生氧等离子体的气氛中进行。 此外，将激光芯片固定的保持器用盖子覆盖，以在干燥空气或惰性气体中形成气密密封的包装，然后在加热时将紫外线照射到包装中。

公开(公告)号：US20100197056A1

公开(公告)日：2010-08-05

申请号：US12656758

申请日：2010-02-16

申请人： Daisuke Hanaoka ,  Masaya Ishida ,  Atsushi Ogawa ,  Yoshihiko Tani ,  Takuro Ishikura

发明人： Daisuke Hanaoka ,  Masaya Ishida ,  Atsushi Ogawa ,  Yoshihiko Tani ,  Takuro Ishikura

IPC分类号： H01L33/00

CPC分类号： H01S5/02212 ,  H01S5/0222 ,  H01S5/32341 ,  Y10T29/5176

摘要： A method for producing a nitride semiconductor laser light source is provided. The nitride semiconductor laser light source has a nitride semiconductor laser chip, a stem for mounting the laser chip thereon, and a cap for covering the laser chip. The laser chip is encapsulated in a sealed container composed of the stem and the cap. The method for producing this nitride semiconductor laser light source has a cleaning step of cleaning the surface of the laser chip, the stem, or the cap. In the cleaning step, the laser chip, the stem, or the cap is exposed with ozone or an excited oxygen atom, or baked by heat. The method also has, after the cleaning step, a capping step of encapsulating the laser chip in the sealed container composed of the stem and the cap. During the capping step, the cleaned surface of the laser chip, the stem, or the cap is kept clean. This method provides a long-life nitride semiconductor laser light source the light emission intensity of which is not easily reduced after a long period of use.

公开(公告)号：US20110174288A1

公开(公告)日：2011-07-21

申请号：US13064534

申请日：2011-03-30

申请人： Daisuke Hanaoka ,  Masaya Ishida ,  Atsushi Ogawa ,  Yoshihiko Tani ,  Takuro Ishikura

发明人： Daisuke Hanaoka ,  Masaya Ishida ,  Atsushi Ogawa ,  Yoshihiko Tani ,  Takuro Ishikura

IPC分类号： F24B1/00

CPC分类号： H01S5/02212 ,  H01S5/0222 ,  H01S5/32341 ,  Y10T29/5176

摘要： A method for producing a nitride semiconductor laser light source is provided. The nitride semiconductor laser light source has a nitride semiconductor laser chip, a stem for mounting the laser chip thereon, and a cap for covering the laser chip. The laser chip is encapsulated in a sealed container composed of the stem and the cap. The method for producing this nitride semiconductor laser light source has a cleaning step of cleaning the surface of the laser chip, the stem, or the cap. In the cleaning step, the laser chip, the stem, or the cap is exposed with ozone or an excited oxygen atom, or baked by heat. The method also has, after the cleaning step, a capping step of encapsulating the laser chip in the sealed container composed of the stem and the cap. During the capping step, the cleaned surface of the laser chip, the stem, or the cap is kept clean. This method provides a long-life nitride semiconductor laser light source the light emission intensity of which is not easily reduced after a long period of use.

摘要翻译： 提供一种生产氮化物半导体激光光源的方法。 氮化物半导体激光光源具有氮化物半导体激光器芯片，用于在其上安装激光器芯片的杆和用于覆盖激光器芯片的盖。 激光芯片被封装在由杆和盖组成的密封容器中。 用于制造该氮化物半导体激光光源的方法具有清洁激光芯片，杆或盖的表面的清洁步骤。 在清洁步骤中，激光芯片，阀杆或盖子暴露于臭氧或激发氧原子，或通过加热进行烘烤。 该方法在清洁步骤之后还具有将激光芯片封装在由杆和盖组成的密封容器中的封盖步骤。 在封盖步骤中，激光芯片，阀杆或盖子的清洁表面保持清洁。 该方法提供了长期使用后其发光强度不容易降低的长寿命氮化物半导体激光光源。

公开(公告)号：US07939433B2

公开(公告)日：2011-05-10

申请号：US12656758

申请日：2010-02-16

申请人： Daisuke Hanaoka ,  Masaya Ishida ,  Atsushi Ogawa ,  Yoshihiko Tani ,  Takuro Ishikura

发明人： Daisuke Hanaoka ,  Masaya Ishida ,  Atsushi Ogawa ,  Yoshihiko Tani ,  Takuro Ishikura

IPC分类号： H01L21/20

CPC分类号： H01S5/02212 ,  H01S5/0222 ,  H01S5/32341 ,  Y10T29/5176

摘要： A method for producing a nitride semiconductor laser light source is provided. The nitride semiconductor laser light source has a nitride semiconductor laser chip, a stem for mounting the laser chip thereon, and a cap for covering the laser chip. The laser chip is encapsulated in a sealed container composed of the stem and the cap. The method for producing this nitride semiconductor laser light source has a cleaning step of cleaning the surface of the laser chip, the stem, or the cap. In the cleaning step, the laser chip, the stem, or the cap is exposed with ozone or an excited oxygen atom, or baked by heat. The method also has, after the cleaning step, a capping step of encapsulating the laser chip in the sealed container composed of the stem and the cap. During the capping step, the cleaned surface of the laser chip, the stem, or the cap is kept clean. This method provides a long-life nitride semiconductor laser light source the light emission intensity of which is not easily reduced after a long period of use.

公开(公告)号：US07833834B2

公开(公告)日：2010-11-16

申请号：US11237946

申请日：2005-09-29

申请人： Daisuke Hanaoka ,  Masaya Ishida ,  Atsushi Ogawa ,  Yoshihiko Tani ,  Takuro Ishikura

发明人： Daisuke Hanaoka ,  Masaya Ishida ,  Atsushi Ogawa ,  Yoshihiko Tani ,  Takuro Ishikura

IPC分类号： H01L21/00

CPC分类号： H01S5/02212 ,  H01S5/0222 ,  H01S5/32341 ,  Y10T29/5176

摘要： A method for producing a nitride semiconductor laser light source is provided. The nitride semiconductor laser light source has a nitride semiconductor laser chip, a stem for mounting the laser chip thereon, and a cap for covering the laser chip. The laser chip is encapsulated in a sealed container composed of the stem and the cap. The method for producing this nitride semiconductor laser light source has a cleaning step of cleaning the surface of the laser chip, the stem, or the cap. In the cleaning step, the laser chip, the stem, or the cap is exposed with ozone or an excited oxygen atom, or baked by heat. The method also has, after the cleaning step, a capping step of encapsulating the laser chip in the sealed container composed of the stem and the cap. During the capping step, the cleaned surface of the laser chip, the stem, or the cap is kept clean. This method provides a long-life nitride semiconductor laser light source the light emission intensity of which is not easily reduced after a long period of use.

摘要翻译： 提供一种生产氮化物半导体激光光源的方法。 氮化物半导体激光光源具有氮化物半导体激光器芯片，用于在其上安装激光器芯片的杆和用于覆盖激光器芯片的盖。 激光芯片被封装在由杆和盖组成的密封容器中。 用于制造该氮化物半导体激光光源的方法具有清洁激光芯片，杆或盖的表面的清洁步骤。 在清洁步骤中，激光芯片，阀杆或盖子暴露于臭氧或激发氧原子，或通过加热进行烘烤。 该方法在清洁步骤之后还具有将激光芯片封装在由杆和盖组成的密封容器中的封盖步骤。 在封盖步骤中，激光芯片，阀杆或盖子的清洁表面保持清洁。 该方法提供了长期使用后其发光强度不容易降低的长寿命氮化物半导体激光光源。

公开(公告)号：US07573924B2

公开(公告)日：2009-08-11

申请号：US11127083

申请日：2005-05-12

申请人： Yuhzoh Tsuda ,  Daisuke Hanaoka ,  Masaya Ishida

发明人： Yuhzoh Tsuda ,  Daisuke Hanaoka ,  Masaya Ishida

IPC分类号： H01S5/00 ,  H01S3/04 ,  H01S3/08

CPC分类号： H01S5/02212 ,  H01S5/0222 ,  H01S5/02476 ,  H01S5/0683 ,  H01S5/32341

摘要： A nitride semiconductor laser device includes a nitride semiconductor laser element having a resonator end surface and capable of emitting light with a wavelength of at most 420 nm, a heat sink joined to the nitride semiconductor laser element, a stem with the heat sink mounted thereon, and a light detecting element mounted on the stem for detecting a laser beam from the nitride semiconductor laser element. The nitride semiconductor laser element, the heat sink and the light detecting element are enclosed within a cap that is joined to the stem, and an atmosphere within the cap has a dew point of at most −30° C. and an oxygen concentration of at most 100 ppm.

摘要翻译： 氮化物半导体激光器件包括具有谐振器端面并能够发射波长最多为420nm的光的氮化物半导体激光元件，连接到氮化物半导体激光元件的散热片，安装有散热片的杆， 以及安装在所述杆上的光检测元件，用于检测来自所述氮化物半导体激光元件的激光束。 氮化物半导体激光元件，散热器和光检测元件被封闭在与杆接合的盖内，盖内的气氛的露点至多为-30℃，氧浓度为 最多100 ppm。

公开(公告)号：US20060068516A1

公开(公告)日：2006-03-30

申请号：US11237946

申请日：2005-09-29

申请人： Daisuke Hanaoka ,  Masaya Ishida ,  Atsushi Ogawa ,  Yoshihiko Tani ,  Takuro Ishikura

发明人： Daisuke Hanaoka ,  Masaya Ishida ,  Atsushi Ogawa ,  Yoshihiko Tani ,  Takuro Ishikura

IPC分类号： H01L21/00 ,  B29C65/00

CPC分类号： H01S5/02212 ,  H01S5/0222 ,  H01S5/32341 ,  Y10T29/5176

摘要： A method for producing a nitride semiconductor laser light source is provided. The nitride semiconductor laser light source has a nitride semiconductor laser chip, a stem for mounting the laser chip thereon, and a cap for covering the laser chip. The laser chip is encapsulated in a sealed container composed of the stem and the cap. The method for producing this nitride semiconductor laser light source has a cleaning step of cleaning the surface of the laser chip, the stem, or the cap. In the cleaning step, the laser chip, the stem, or the cap is exposed with ozone or an excited oxygen atom, or baked by heat. The method also has, after the cleaning step, a capping step of encapsulating the laser chip in the sealed container composed of the stem and the cap. During the capping step, the cleaned surface of the laser chip, the stem, or the, cap is kept clean. This method provides a long-life nitride semiconductor laser light source the light emission intensity of which is not easily reduced after a long period of use.

摘要翻译： 提供一种生产氮化物半导体激光光源的方法。 氮化物半导体激光光源具有氮化物半导体激光器芯片，用于在其上安装激光器芯片的杆和用于覆盖激光器芯片的盖。 激光芯片被封装在由杆和盖组成的密封容器中。 用于制造该氮化物半导体激光光源的方法具有清洁激光芯片，杆或盖的表面的清洁步骤。 在清洁步骤中，激光芯片，阀杆或盖子暴露于臭氧或激发氧原子，或通过加热进行烘烤。 该方法在清洁步骤之后还具有将激光芯片封装在由杆和盖组成的密封容器中的封盖步骤。 在封盖步骤中，激光芯片，杆或盖的清洁表面保持清洁。 该方法提供了长期使用后其发光强度不容易降低的长寿命氮化物半导体激光光源。

公开(公告)号：US20050265413A1

公开(公告)日：2005-12-01

申请号：US11127083

申请日：2005-05-12

申请人： Yuhzoh Tsuda ,  Daisuke Hanaoka ,  Masaya Ishida

发明人： Yuhzoh Tsuda ,  Daisuke Hanaoka ,  Masaya Ishida

IPC分类号： H01L21/00 ,  H01S5/02 ,  H01S5/022 ,  H01S5/024 ,  H01S5/0683 ,  H01S5/323

CPC分类号： H01S5/02212 ,  H01S5/0222 ,  H01S5/02476 ,  H01S5/0683 ,  H01S5/32341

摘要： A nitride semiconductor laser device includes a nitride semiconductor laser element having a resonator end surface and capable of emitting light with a wavelength of at most 420 nm, a heat sink joined to the nitride semiconductor laser element, a stem with the heat sink mounted thereon, and a light detecting element mounted on the stem for detecting a laser beam from the nitride semiconductor laser element. The nitride semiconductor laser element, the heat sink and the light detecting element are enclosed within a cap that is joined to the stem, and an atmosphere within the cap has a dew point of at most −30° C. and an oxygen concentration of at most 100 ppm.

摘要翻译： 氮化物半导体激光器件包括具有谐振器端面并能够发射波长最多为420nm的光的氮化物半导体激光元件，连接到氮化物半导体激光元件的散热片，安装有散热片的杆， 以及安装在所述杆上的光检测元件，用于检测来自所述氮化物半导体激光元件的激光束。 氮化物半导体激光元件，散热器和光检测元件被封闭在与杆接合的盖内，盖内的气氛的露点至多为-30℃，氧浓度为 最多100 ppm。

公开(公告)号：US07691729B2

公开(公告)日：2010-04-06

申请号：US11889767

申请日：2007-08-16

申请人： Daisuke Hanaoka ,  Masaya Ishida ,  Atsushi Ogawa ,  Yoshihiko Tani ,  Takuro Ishikura

发明人： Daisuke Hanaoka ,  Masaya Ishida ,  Atsushi Ogawa ,  Yoshihiko Tani ,  Takuro Ishikura

IPC分类号： H01L21/20

CPC分类号： H01S5/02212 ,  H01S5/0222 ,  H01S5/32341 ,  Y10T29/5176

摘要： A method for producing a nitride semiconductor laser light source is provided. The nitride semiconductor laser light source has a nitride semiconductor laser chip, a stem for mounting the laser chip thereon, and a cap for covering the laser chip. The laser chip is encapsulated in a sealed container composed of the stem and the cap. The method for producing this nitride semiconductor, laser light source has a cleaning step of cleaning the surface of the laser chip, the stem, or the cap. In the cleaning step, the laser chip, the stem, or the cap is exposed with ozone or an excited oxygen atom, or baked by heat. The method also has, after the cleaning step, a capping step of encapsulating the laser chip in the sealed container composed of the stem and the cap. During the capping step, the cleaned surface of the laser chip, the stem, or the cap is kept clean. This method provides a long-life nitride semiconductor laser light source the light emission intensity of which is not easily reduced after a long period of use.

摘要翻译： 提供一种生产氮化物半导体激光光源的方法。 氮化物半导体激光光源具有氮化物半导体激光器芯片，用于在其上安装激光器芯片的杆和用于覆盖激光器芯片的盖。 激光芯片被封装在由杆和盖组成的密封容器中。 用于制造该氮化物半导体的方法，激光光源具有清洁激光芯片，杆或盖的表面的清洁步骤。 在清洁步骤中，激光芯片，阀杆或盖子暴露于臭氧或激发氧原子，或通过加热进行烘烤。 该方法在清洁步骤之后还具有将激光芯片封装在由杆和盖组成的密封容器中的封盖步骤。 在封盖步骤中，激光芯片，阀杆或盖子的清洁表面保持清洁。 该方法提供了长期使用后其发光强度不容易降低的长寿命氮化物半导体激光光源。

公开(公告)号：US20090140416A1

公开(公告)日：2009-06-04

申请号：US12292672

申请日：2008-11-24

申请人： Masaya Ishida ,  Daisuke Hanaoka ,  Takeshi Horiguchi

发明人： Masaya Ishida ,  Daisuke Hanaoka ,  Takeshi Horiguchi

IPC分类号： H01L23/04 ,  B65D85/00

CPC分类号： H01S5/02212 ,  H01L2224/48091 ,  H01L2924/19107 ,  H01S5/02296 ,  H01L2924/00014

摘要： A cap member capable of alleviating degradation of reliability and improving fabrication yields is provided. The cap member has a cylindrical side wall portion, a top face portion closing one end of the side wall portion and having a light exit hole formed therein to allow extraction of laser light from a semiconductor laser chip; a light transmission window fitted to the top face portion to stop the light exit hole, and a flange portion arranged at the other end of the side wall portion and welded on the upper face of a stem on which the semiconductor laser chip is mounted. A groove portion is formed in an inner surface of the top face portion, and this groove portion makes part of the top face portion in a predetermined region less thick than the other part thereof.

摘要翻译： 提供了能够减轻可靠性降低并提高制造成品率的盖构件。 盖构件具有圆筒形侧壁部分，顶面部分，其封闭侧壁部分的一端并且具有形成在其中的光出射孔，以允许从半导体激光芯片提取激光; 安装在顶面部上以阻止光射出孔的光透射窗，以及布置在侧壁部分的另一端并焊接在其上安装半导体激光芯片的杆的上表面上的凸缘部分。 在顶面部的内表面形成有槽部，该槽部使顶面部的一部分成为比其他部分厚的规定区域。