公开(公告)号：US06301510B1

公开(公告)日：2001-10-09

申请号：US09607882

申请日：2000-06-30

Applicant: David Cooperberg ,  Richard A. Gottscho ,  Vahid Vahedi

Inventor： David Cooperberg ,  Richard A. Gottscho ,  Vahid Vahedi

IPC: G05B1302

CPC classification number: H01J37/32935

Abstract: A method and apparatus for calibrating a semi-empirical process simulator used to determine process values in a plasma process for creating a desired surface profile on a process substrate includes providing a test model which captures all mechanisms responsible for profile evolution in terms of a set of unknown surface parameters. A set of test conditions is derived for which the profile evolution is governed by only a limited number of parameters. For each set of test conditions, test values are selected and a test substrate is actually subjected to a test process defined by the test values, thereby creating a test surface profile. The test values are used to generate an approximate profile prediction and are adjusted to minimize the discrepancy between the test surface profile and the approximate profile prediction, thereby providing a final model of the profile evolution in terms of the process values.

Abstract translation: 用于校准用于确定等离子体工艺中的工艺值以用于在工艺衬底上创建所需表面轮廓的半经验过程模拟器的方法和装置包括提供测试模型，该测试模型根据一组 未知表面参数。 导出了一组测试条件，轮廓演化仅由有限数量的参数来控制。 对于每组测试条件，选择测试值，并且测试衬底实际上经受由测试值定义的测试过程，从而产生测试表面轮廓。 测试值用于生成近似轮廓预测，并进行调整，以最小化测试曲面轮廓和近似轮廓预测之间的差异，从而根据过程值提供轮廓演变的最终模型。