MICROMACHINED MAGNETIC FIELD SENSORS
    11.
    发明申请
    MICROMACHINED MAGNETIC FIELD SENSORS 有权
    MICROMACHINED磁场传感器

    公开(公告)号:US20120007598A1

    公开(公告)日:2012-01-12

    申请号:US12833390

    申请日:2010-07-09

    IPC分类号: G01R33/02

    摘要: A micromachined magnetic field sensor integrated with electronics is disclosed. The magnetic field sensors utilize Hall-effect sensing mechanisms to achieve 3-axis sensing. A Z axis sensor can be fabricated either on a device layer or on a conventional IC substrate with the design of conventional horizontal Hall plates. An X and Y axis sensor are constructed on the device layer. In some embodiments, a magnetic flux concentrator is applied to enhance the performance of the magnetic field sensor. In some embodiments, the magnetic field sensors are placed on slope sidewalls to achieve 3-axis magnetic sensing system. In some embodiments, a stress isolation structure is incorporated to lower the sensor offset. The conventional IC substrate and device layer are connected electrically to form a 3-axis magnetic sensing system. The magnetic field sensor can also be integrated with motion sensors that are constructed in the similar technology.

    摘要翻译: 公开了一种与电子器件集成的微加工磁场传感器。 磁场传感器利用霍尔效应感测机构实现3轴感测。 Z轴传感器可以在设备层或常规IC基板上制造,具有常规水平霍尔板的设计。 X和Y轴传感器构造在器件层上。 在一些实施例中,施加磁通集中器以增强磁场传感器的性能。 在一些实施例中,磁场传感器被放置在倾斜侧壁上以实现3轴磁感测系统。 在一些实施例中,结合了应力隔离结构以降低传感器偏移。 常规IC基板和器件层电连接以形成3轴磁感测系统。 磁场传感器也可以与以类似技术构造的运动传感器集成。