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公开(公告)号:US20090267228A1
公开(公告)日:2009-10-29
申请号:US12111510
申请日:2008-04-29
申请人: Charles L. Arvin , Carla A. Bailey , Harry D. Cox , Hua Gan , Hsichang Liu , Arthur G. Merryman , Vall F. McClean , Srinivasa S. N. Reddy , Brian R. Sundlof
发明人: Charles L. Arvin , Carla A. Bailey , Harry D. Cox , Hua Gan , Hsichang Liu , Arthur G. Merryman , Vall F. McClean , Srinivasa S. N. Reddy , Brian R. Sundlof
CPC分类号: H01L24/05 , H01L24/03 , H01L2224/03462 , H01L2224/03472 , H01L2224/03831 , H01L2224/0401 , H01L2224/05011 , H01L2224/05017 , H01L2224/05147 , H01L2224/05166 , H01L2224/05564 , H01L2224/05647 , H01L2224/05655 , H01L2224/131 , H01L2924/00013 , H01L2924/0002 , H01L2924/01022 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01327 , H01L2924/14 , H01L2924/1461 , H01L2924/00014 , H01L2224/13099 , H01L2224/13599 , H01L2224/05599 , H01L2224/05099 , H01L2224/29099 , H01L2224/29599 , H01L2924/014 , H01L2924/00 , H01L2224/05552
摘要: One embodiment of the present invention is directed to an under bump metallurgy material. The under bump metallurgy material of this embodiment includes an adhesion layer and a conduction layer formed on top of the adhesion layer. The under bump metallurgy material of this embodiment also includes a barrier layer plated on top of the conduction layer and a sacrificial layer plated on top of the barrier layer. The conduction layer of this embodiment includes a trench formed therein, the trench contacting a portion of the barrier layer and blocking a path of intermetallic formation between the conduction layer and the sacrificial layer.
摘要翻译: 本发明的一个实施例涉及一种凸块下金属材料。 本实施方式的凸块状冶金材料包括粘合层和形成在粘合层顶部的导电层。 该实施例的凸块下冶金材料还包括电镀在导电层顶部上的阻挡层和镀在阻挡层顶部上的牺牲层。 该实施例的导电层包括在其中形成的沟槽,沟槽接触势垒层的一部分并且阻挡导电层和牺牲层之间的金属间形成路径。
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公开(公告)号:US07683493B2
公开(公告)日:2010-03-23
申请号:US12111510
申请日:2008-04-29
申请人: Charles L. Arvin , Carla A. Bailey , Harry D. Cox , Hua Gan , Hsichang Liu , Arthur G. Merryman , Vall F. McClean , Srinivasa S. N. Reddy , Brian R. Sundlof
发明人: Charles L. Arvin , Carla A. Bailey , Harry D. Cox , Hua Gan , Hsichang Liu , Arthur G. Merryman , Vall F. McClean , Srinivasa S. N. Reddy , Brian R. Sundlof
IPC分类号: H01L23/52
CPC分类号: H01L24/05 , H01L24/03 , H01L2224/03462 , H01L2224/03472 , H01L2224/03831 , H01L2224/0401 , H01L2224/05011 , H01L2224/05017 , H01L2224/05147 , H01L2224/05166 , H01L2224/05564 , H01L2224/05647 , H01L2224/05655 , H01L2224/131 , H01L2924/00013 , H01L2924/0002 , H01L2924/01022 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01327 , H01L2924/14 , H01L2924/1461 , H01L2924/00014 , H01L2224/13099 , H01L2224/13599 , H01L2224/05599 , H01L2224/05099 , H01L2224/29099 , H01L2224/29599 , H01L2924/014 , H01L2924/00 , H01L2224/05552
摘要: One embodiment of the present invention is directed to an under bump metallurgy material. The under bump metallurgy material of this embodiment includes an adhesion layer and a conduction layer formed on top of the adhesion layer. The under bump metallurgy material of this embodiment also includes a barrier layer plated on top of the conduction layer and a sacrificial layer plated on top of the barrier layer. The conduction layer of this embodiment includes a trench formed therein, the trench contacting a portion of the barrier layer and blocking a path of intermetallic formation between the conduction layer and the sacrificial layer.
摘要翻译: 本发明的一个实施例涉及一种凸块下金属材料。 本实施方式的凸块状冶金材料包括粘合层和形成在粘合层顶部的导电层。 该实施例的凸块下冶金材料还包括电镀在导电层顶部上的阻挡层和镀在阻挡层顶部上的牺牲层。 该实施例的导电层包括在其中形成的沟槽,沟槽接触势垒层的一部分并且阻挡导电层和牺牲层之间的金属间形成路径。
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