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    Compositions and structures for chemical mechanical polishing of FeRAM capacitors and method of fabricating FeRAM capacitors using same
    11.
    发明授权
    Compositions and structures for chemical mechanical polishing of FeRAM capacitors and method of fabricating FeRAM capacitors using same 有权
    FeRAM电容器的化学机械抛光的组成和结构以及使用其制造FeRAM电容器的方法

    公开(公告)号：US06346741B1

    公开(公告)日：2002-02-12

    申请号：US09200499

    申请日：1998-11-25

    申请人： Peter C. Van Buskirk ,  Michael W. Russell ,  Steven M. Bilodeau ,  Thomas H. Baum

    发明人： Peter C. Van Buskirk ,  Michael W. Russell ,  Steven M. Bilodeau ,  Thomas H. Baum

    IPC分类号： H01L2940

    CPC分类号： H01L27/1085 ,  C09G1/02 ,  C09K3/1463 ,  H01L21/31053 ,  H01L21/3212 ,  H01L27/10852 ,  H01L27/10861 ,  H01L28/55 ,  H01L28/60 ,  H01L28/75

    摘要： An integrated circuit structures formed by chemical mechanical polishing (CMP) process, which comprises a conductive pathway recessed in a dielectric substrate, wherein the conductive pathway comprises conductive transmission lines encapsulated in a transmission-enhancement material, and wherein the conductive pathway is filled sequentially by a first layer of the transmission-enhancement material followed by the conductive transmission line; a second layer of transmission-enhancement material encapsulating the conductive transmission line and contacting the first layer of the transmission-enhancement material, wherein the transmission-enhancement material is selected from the group consisting of high magnetic permeability material and high permittivity material. Such integrated circuit structure may comprise a device structure selected from the group consisting of capacitors, inductors, and resistors. Preferably, the transmission-enhancement material comprises MgMn ferrites, MgMnAl ferrites, barium strontium titanate, lead zirconium titanate, titanium oxide, tantalum oxide, etc.

    摘要翻译： 通过化学机械抛光（CMP）工艺形成的集成电路结构，其包括凹入电介质基底中的导电通路，其中导电路径包括封装在透射增强材料中的导电传输线，并且其中导电通路依次由 传输增强材料的第一层，随后是导电传输线; 传输增强材料的第二层，其封装所述导电传输线并与所述透射增强材料的第一层接触，其中所述透射增强材料选自高磁导率材料和高介电常数材料。 这种集成电路结构可以包括从由电容器，电感器和电阻器组成的组中选择的器件结构。 优选地，透射增强材料包括MgMn铁氧体，MgMnAl铁氧体，钛酸锶钡，钛酸铅锆，氧化钛，氧化钽等

    Confinement of E-fields in high density ferroelectric memory device structures
    12.
    发明授权
    Confinement of E-fields in high density ferroelectric memory device structures 失效
    限制高密度铁电存储器件结构中的电场

    公开(公告)号：US06342711B1

    公开(公告)日：2002-01-29

    申请号：US09264047

    申请日：1999-03-08

    申请人： Peter C. Van Buskirk ,  Steven M. Bilodeau

    发明人： Peter C. Van Buskirk ,  Steven M. Bilodeau

    IPC分类号： H01L2976

    CPC分类号： H01L28/75 ,  H01L21/28518 ,  H01L21/28568 ,  H01L28/55

    摘要： A ferroelectric capacitor device structure, including a ferroelectric stack capacitor comprising a ferroelectric material capacitor element on a substrate containing buried transistor circuitry beneath an insulator layer having a via therein containing a conductive plug to the transistor circuitry, wherein E-fields are structurally confined to the ferroelectric capacitor material element. Such E-fields confinement may be effected by fabrication of the device structure including: (a) patterning the stack capacitor, and depositing a non-ferroelectric, high ∈ material layer over and on the sides of the stack capacitor; (b) forming the stack capacitor without patterning the ferroelectric material and rendering a portion of the material non-ferroelectric in character; or (c) forming the ferroelectric stack capacitor with an aspect ratio, of effective lateral dimension d of the ferroelectric capacitor material element to thickness t of the ferroelectric capacitor material element, that is greater than 5, with d and t being measured in same dimensional units.

    摘要翻译： 一种强电介质电容器器件结构，包括铁电堆叠电容器，该铁电体堆叠电容器包括位于绝缘体层下方的包含埋入晶体管电路的衬底上的铁电材料电容器元件，所述绝缘体层具有其中包含导体插塞到晶体管电路的通孔，其中电场被结构地局限于 铁电电容材料元件。 这样的电场限制可以通过制造器件结构来实现，该器件结构包括：（a）图案化叠层电容器，并且在堆叠电容器的侧面上和之上沉积非铁电的高ε材料层; （b）形成堆叠电容器，而不对铁电材料进行构图，并使材料的一部分非铁电性能; 或（c）形成强电介质电容器材料元素的有效横向尺寸d与铁电电容器材料元件的厚度t的长宽比大于5的铁电堆叠电容器，其中d和t以相同的尺寸被测量 单位。

    SOFC INTERCONNECT BARRIERS AND METHODS OF MAKING SAME USING MASKS
    15.
    发明申请
    SOFC INTERCONNECT BARRIERS AND METHODS OF MAKING SAME USING MASKS 审中-公开

    公开(公告)号：US20180062183A1

    公开(公告)日：2018-03-01

    申请号：US15790023

    申请日：2017-10-22

    申请人： Jeffrey F. Roeder ,  Peter C. Van Buskirk

    发明人： Jeffrey F. Roeder ,  Peter C. Van Buskirk

    IPC分类号： H01M8/021

    摘要： A novel method to produce thin films spatially disposed on desired areas of workpieces is disclosed. Examples of include the formation of a yttria stabilized zirconia (YSZ) film formed on a desired portion of a stainless steel interconnect for solid oxide fuel cells by Atomic Layer Deposition (ALD). A number of methods to produce the spatially disposed YSZ film structures are described including polymeric and silicone rubber masks. The thin film structures have utility for preventing the reaction of glasses with metals, in particular alkali-earth containing glasses with ferritic stainless steels, allowing high temperature bonding of these materials.

    PHOTOCATALYTIC DEVICES AND SYSTEMS
    17.
    发明申请
    PHOTOCATALYTIC DEVICES AND SYSTEMS 审中-公开
    光电设备和系统

    公开(公告)号：US20150110679A1

    公开(公告)日：2015-04-23

    申请号：US14520321

    申请日：2014-10-21

    申请人： Peter C. Van Buskirk ,  Jeffrey F. Roeder

    发明人： Peter C. Van Buskirk ,  Jeffrey F. Roeder

    IPC分类号： A61L9/00

    CPC分类号： A61L9/00 ,  A61L2/232 ,  A61L2/238 ,  B01J21/063

    摘要： Novel photocatalytic devices are disclosed, that utilize ultrathin titania based photocatalytic materials formed on optical elements with high transmissivity, high reflectivity or scattering characteristics, or on high surface area or high porosity open cell materials. The disclosure includes methods to fabricate such devices, including MOCVD and ALD. The disclosure also includes photocatalytic systems that are either standalone or combined with general illumination (lighting) utility, and which may incorporate passive fluid exchange, user configurable photocatalytic optical elements, photocatalytic illumination achieved either by the general illumination light source, dedicated blue or UV light sources, or combinations thereof, and operating methodologies for combined photocatalytic and lighting systems. The disclosure also includes photocatalytic materials incorporated on the surface of packaged LEDs, LED lamps and LED luminaires, with photocatalytic materials incorporated on optically useful luminaire surfaces or on the surface of the remote phosphor. The disclosure also includes ultrathin photocatalytic materials incorporated on surfaces to affect antibacterial and antiviral properties.

    摘要翻译： 公开了新型光催化装置，其利用形成在具有高透射率，高反射率或散射特性的光学元件上形成的超薄二氧化钛基光催化材料，或在高表面积或高孔隙率开孔材料上。 本公开包括制造这样的装置的方法，包括MOCVD和ALD。 本公开还包括独立的或与一般照明（照明）实用程序组合的光催化体系，其可以包括无源流体交换，用户可配置的光催化光学元件，通过一般照明光源，专用蓝光或UV光实现的光催化照明 来源或其组合，以及组合的光催化和照明系统的操作方法。 本公开还包括结合在封装的LED，LED灯和LED灯具的表面上的光催化材料，其中光催化材料结合在光学上有用的照明器表面上或在远程荧光体的表面上。 本公开还包括掺入表面的超薄光催化材料以影响抗菌和抗病毒性质。

    Ternary nitride-carbide barrier layers
    19.
    发明授权
    Ternary nitride-carbide barrier layers 失效
    三元氮化碳 - 碳化物阻挡层

    公开(公告)号：US06184550B2

    公开(公告)日：2001-02-06

    申请号：US09141971

    申请日：1998-08-28

    申请人： Peter C. Van Buskirk ,  Michael W. Russell

    发明人： Peter C. Van Buskirk ,  Michael W. Russell

    IPC分类号： H01L2972

    CPC分类号： H01L23/53238 ,  H01L21/28568 ,  H01L28/75 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A microelectronic structure including adjacent material layers susceptible of adverse interaction in contact with one another, and a barrier layer interposed between said adjacent material layers, wherein said barrier layer comprises a binary, ternary or higher order metal nitride-carbide material, whose metal constituents are different from one another and include at least one metal selected from the group consisting of transition metals Ti, V, Cr, Zr, Nb, Mo, Hf, Ta, W, Sc and Y, and optionally further including Al and/or Si. The barrier layer is stoichiometrically constituted to be amorphous or nanocrystalline in character, and may be readily formed by techniques such as chemical vapor deposition, sputtering, and plasma-assisted deposition, to provide a diffusional barrier of appropriate resistivity character for structures such as DRAMs or non-volatile ferroelectric memory cells.

    摘要翻译： 包括易于相互接触的不利相互作用的相邻材料层的微电子结构以及介于所述相邻材料层之间的阻挡层，其中所述阻挡层包括二元，三元或更高级的金属氮化物碳化物材料，其金属成分为 包括选自过渡金属Ti，V，Cr，Zr，Nb，Mo，Hf，Ta，W，Sc和Y中的至少一种金属，以及任选地还包括Al和/或Si。 阻挡层在化学计量上构成为特征的无定形或纳米晶体，并且可以通过诸如化学气相沉积，溅射和等离子体辅助沉积之类的技术容易地形成，以提供用于诸如DRAM或DRAM的结构的适当电阻率特性的扩散势垒 非易失性铁电记忆体。

    Digital chemical vapor deposition (CVD) method for forming a multi-component oxide layer
    20.
    发明授权
    Digital chemical vapor deposition (CVD) method for forming a multi-component oxide layer 失效
    用于形成多组分氧化物层的数字化学气相沉积（CVD）方法

    公开(公告)号：US5972430A

    公开(公告)日：1999-10-26

    申请号：US979465

    申请日：1997-11-26

    申请人： Frank DiMeo, Jr. ,  Steven M. Bilodeau ,  Peter C. Van Buskirk

    发明人： Frank DiMeo, Jr. ,  Steven M. Bilodeau ,  Peter C. Van Buskirk

    IPC分类号： C23C16/40 ,  C23C16/44 ,  C23C16/455

    CPC分类号： C23C16/409 ,  C23C16/45531

    摘要： A chemical vapor deposition (CVD) method for forming a multi-component oxide layer. There is first provided a chemical vapor deposition (CVD) reactor chamber. There is then positioned within the chemical vapor deposition (CVD) reactor chamber a substrate. There is then formed over the substrate a multi-component oxide precursor layer. The multi-component oxide precursor layer is formed from at minimum a first precursor reactant source material and a second precursor reactant source material introduced simultaneously into the chemical vapor deposition (CVD) reactor chamber in absence of an oxidant reactant source material. There is then oxidized with the oxidant reactant source material within the chemical vapor deposition (CVD) reactor chamber the multi-component oxide precursor layer formed over the substrate to form a multi-component oxide layer formed over the substrate. The oxidant reactant source material is introduced into the chemical vapor deposition (CVD) reactor chamber in absence of the first precursor reactant source material and the second precursor reactant source material.

    摘要翻译： 一种用于形成多组分氧化物层的化学气相沉积（CVD）方法。 首先提供化学气相沉积（CVD）反应室。 然后在化学气相沉积（CVD）反应器室内定位一个衬底。 然后在衬底上形成多组分氧化物前体层。 多组分氧化物前体层由不存在氧化剂反应物源材料的至少第一前体反应物源材料和同时引入化学气相沉积（CVD）反应器室的第二前体反应物源材料形成。 然后在化学气相沉积（CVD）反应器室内用氧化剂反应物源材料氧化形成在衬底上的多组分氧化物前体层，以形成在衬底上形成的多组分氧化物层。 在不存在第一前体反应物源材料和第二前体反应物源材料的情况下，氧化剂反应物源材料被引入到化学气相沉积（CVD）反应器室中。