公开(公告)号：US20130032085A1

公开(公告)日：2013-02-07

申请号：US13456693

申请日：2012-04-26

申请人： Hiroji HANAWA ,  Yuriy Melnik ,  Donald J.K. Olgado ,  Karl M. Brown ,  Son T. Nguyen ,  Kevin S. Griffin

发明人： Hiroji HANAWA ,  Yuriy Melnik ,  Donald J.K. Olgado ,  Karl M. Brown ,  Son T. Nguyen ,  Kevin S. Griffin

IPC分类号： C30B25/14 ,  C30B25/02

CPC分类号： C23C16/303 ,  C23C16/4488 ,  C23C16/452 ,  C30B25/105 ,  C30B25/14 ,  C30B29/403

摘要： Embodiments of the invention disclosed herein generally relate to a hydride vapor phase epitaxy (HVPE) deposition chamber that utilizes a plasma generation apparatus to form an activated precursor gas that is used to rapidly form a high quality compound nitride layer on a surface of a substrate. In one embodiment, the plasma generation apparatus is used to create a desirable group-III metal halide precursor gas that can enhance the deposition reaction kinetics, and thus reduce the processing time and improve the film quality of a formed group-III metal nitride layer. In addition, the chamber may be equipped with a separate nitrogen containing precursor activated species generator to enhance the activity of the delivered nitrogen precursor gases.

摘要翻译： 本文公开的本发明的实施例通常涉及氢化物气相外延（HVPE）沉积室，其利用等离子体产生装置形成活化的前体气体，其用于在衬底的表面上快速形成高质量的复合氮化物层。 在一个实施例中，等离子体产生装置用于产生可以增强沉积反应动力学，从而减少处理时间并改善形成的III族金属氮化物层的膜质量的期望的III族金属卤化物前体气体。 此外，腔室可以配备有单独的含氮前体活化物质发生器，以增强所输送的氮前体气体的活性。

公开(公告)号：US08562798B2

公开(公告)日：2013-10-22

申请号：US11222231

申请日：2005-09-07

申请人： Karl M. Brown ,  John Pipitone ,  Vineet Mehta

发明人： Karl M. Brown ,  John Pipitone ,  Vineet Mehta

IPC分类号： C23C14/00 ,  C23C14/32 ,  C25B9/00 ,  C25B11/00 ,  C25B13/00 ,  H01B11/02 ,  H01B11/06 ,  H02G3/04 ,  H05K1/09

CPC分类号： H01J37/3408 ,  C23C14/046 ,  C23C14/345 ,  C23C14/358 ,  H01J37/32082 ,  H01J37/32706 ,  H01L21/2855 ,  H01L21/76843 ,  H01L21/76844

摘要： A physical vapor deposition reactor includes a metal sputter target, a D.C. sputter power source coupled to the metal sputter target and a wafer support pedestal facing the metal sputter target. A movable magnet array is adjacent a side of the metal sputter target opposite the wafer support pedestal. A solid metal RF feed rod engages the metal sputter target and extends from a surface of the target on a side opposite the wafer support pedestal. A VHF impedance match circuit is coupled to an end of the RF feed rod opposite the metal sputter target and a VHF RF power generator coupled to said VHF impedance match circuit. Preferably, the reactor of further includes a center axle about which the movable magnet array is rotatable, the center axle having an axially extending hollow passageway, the RF feed rod extending through the passageway.

摘要翻译： 物理气相沉积反应器包括金属溅射靶，耦合到金属溅射靶的直流溅射功率源和面向金属溅射靶的晶片支撑基座。 可移动磁体阵列与金属溅射靶的与晶片支撑基座相对的一侧相邻。 固体金属RF馈送杆接合金属溅射靶并且在与晶片支撑基座相对的一侧上从靶的表面延伸。 VHF阻抗匹配电路耦合到与金属溅射靶相对的RF馈电杆的端部以及耦合到所述VHF阻抗匹配电路的VHF RF发电发生器。 优选地，反应器还包括中心轴，可动磁体阵列围绕该中心轴可旋转，中心轴具有轴向延伸的中空通道，RF馈送杆延伸穿过通道。

公开(公告)号：US20090229969A1

公开(公告)日：2009-09-17

申请号：US12077067

申请日：2008-03-14

申请人： Daniel J. Hoffman ,  Karl M. Brown ,  Ying Rui ,  John Pipitone

发明人： Daniel J. Hoffman ,  Karl M. Brown ,  Ying Rui ,  John Pipitone

IPC分类号： C23C14/34

CPC分类号： C23C14/35 ,  C23C14/3471 ,  C23C14/50 ,  C23C14/542 ,  H01J37/32091 ,  H01J37/32174 ,  H01J37/32577 ,  H01J37/3266 ,  H01J37/32706 ,  H01J37/32715 ,  H01J37/34 ,  H01J37/3444

摘要： In a plasma enhanced physical vapor deposition of a material onto workpiece, a metal target faces the workpiece across a target-to-workpiece gap less than a diameter of the workpiece. A carrier gas is introduced into the chamber and gas pressure in the chamber is maintained above a threshold pressure at which mean free path is less than 5% of the gap. RF plasma source power from a VHF generator is applied to the target to generate a capacitively coupled plasma at the target, the VHF generator having a frequency exceeding 30 MHz. The plasma is extended across the gap to the workpiece by providing through the workpiece a first VHF ground return path at the frequency of the VHF generator.

摘要翻译： 在等离子体中将材料物理气相沉积到工件上时，金属靶在工件间距小于工件直径的工件间距对象。 将载气引入室中，并且室中的气体压力保持在平均自由程小于间隙的5％的阈值压力以上。 来自VHF发生器的RF等离子体源功率被施加到目标以在目标处产生电容耦合等离子体，VHF发生器具有超过30MHz的频率。 通过在VHF发生器的频率处提供穿过工件的第一VHF接地返回路径，等离子体跨越间隙延伸到工件。

公开(公告)号：US08062484B2

公开(公告)日：2011-11-22

申请号：US11222230

申请日：2005-09-07

申请人： Karl M. Brown ,  John Pipitone ,  Vineet Mehta

发明人： Karl M. Brown ,  John Pipitone ,  Vineet Mehta

IPC分类号： C23C14/00

CPC分类号： H01J37/3408 ,  C23C14/046 ,  C23C14/345 ,  C23C14/358 ,  H01J37/32082 ,  H01J37/32706 ,  H01L21/2855 ,  H01L21/76843 ,  H01L21/76844

摘要： A method of performing physical vapor deposition of copper onto an integrated circuit in a vacuum chamber of a plasma reactor, includes providing a copper target near a ceiling of the chamber, placing an integrated circuit wafer on a wafer support pedestal facing the target, introducing a carrier gas into the vacuum chamber, and establishing a deposition rate on the wafer by applying D.C. power to the copper target while establishing a plasma ionization fraction by applying VHF power to the copper target. The method can further include promoting re-sputtering of copper on vertical surfaces on the wafer by coupling HF or LF power to the wafer. The method preferably includes maintaining a target magnetic field at the target and scanning the target magnetic field across the target.

摘要翻译： 在等离子体反应器的真空室中的集成电路上进行铜的物理蒸镀的方法包括：在室的顶板附近设置铜靶，将集成电路晶片放置在面向靶的晶片支撑台上，引入 载气进入真空室，并通过向铜靶施加直流电力，同时通过对铜靶施加甚高频电源建立等离子体电离分数，在晶片上建立沉积速率。 该方法还可以包括通过将HF或LF功率耦合到晶片来促进铜在晶片上的垂直表面上的再溅射。 该方法优选地包括维持目标磁场并扫描目标上的目标磁场。

公开(公告)号：US09856558B2

公开(公告)日：2018-01-02

申请号：US12077067

申请日：2008-03-14

申请人： Daniel J. Hoffman ,  Karl M. Brown ,  Ying Rui ,  John Pipitone

发明人： Daniel J. Hoffman ,  Karl M. Brown ,  Ying Rui ,  John Pipitone

IPC分类号： C23C14/34 ,  C23C14/35 ,  H01J37/32 ,  H01J37/34 ,  C23C14/50 ,  C23C14/54

CPC分类号： C23C14/35 ,  C23C14/3471 ,  C23C14/50 ,  C23C14/542 ,  H01J37/32091 ,  H01J37/32174 ,  H01J37/32577 ,  H01J37/3266 ,  H01J37/32706 ,  H01J37/32715 ,  H01J37/34 ,  H01J37/3444

摘要： In a plasma enhanced physical vapor deposition of a material onto workpiece, a metal target faces the workpiece across a target-to-workpiece gap less than a diameter of the workpiece. A carrier gas is introduced into the chamber and gas pressure in the chamber is maintained above a threshold pressure at which mean free path is less than 5% of the gap. RF plasma source power from a VHF generator is applied to the target to generate a capacitively coupled plasma at the target, the VHF generator having a frequency exceeding 30 MHz. The plasma is extended across the gap to the workpiece by providing through the workpiece a first VHF ground return path at the frequency of the VHF generator.

公开(公告)号：US09593411B2

公开(公告)日：2017-03-14

申请号：US13614704

申请日：2012-09-13

申请人： Daniel J. Hoffman ,  Karl M. Brown ,  Ying Rui ,  John Pipitone

发明人： Daniel J. Hoffman ,  Karl M. Brown ,  Ying Rui ,  John Pipitone

IPC分类号： C23C14/34 ,  C23C14/35 ,  H01J37/32 ,  H01J37/34 ,  C23C14/50

CPC分类号： C23C14/35 ,  C23C14/3471 ,  C23C14/50 ,  C23C14/542 ,  H01J37/32091 ,  H01J37/32174 ,  H01J37/32577 ,  H01J37/3266 ,  H01J37/32706 ,  H01J37/32715 ,  H01J37/34 ,  H01J37/3444

摘要： In a plasma enhanced physical vapor deposition of a material onto workpiece, a metal target faces the workpiece across a target-to-workpiece gap less than a diameter of the workpiece. A carrier gas is introduced into the chamber and gas pressure in the chamber is maintained above a threshold pressure at which mean free path is less than 5% of the gap. RF plasma source power from a VHF generator is applied to the target to generate a capacitively coupled plasma at the target, the VHF generator having a frequency exceeding 30 MHz. The plasma is extended across the gap to the workpiece by providing through the workpiece a first VHF ground return path at the frequency of the VHF generator.

摘要翻译： 在等离子体中将材料物理气相沉积到工件上时，金属靶在工件间距小于工件直径的工件间距对象。 将载气引入室中，并且室中的气体压力保持在平均自由程小于间隙的5％的阈值压力以上。 来自VHF发生器的RF等离子体源功率被施加到目标以在目标处产生电容耦合等离子体，VHF发生器具有超过30MHz的频率。 通过在VHF发生器的频率处提供穿过工件的第一VHF接地返回路径，等离子体跨越间隙延伸到工件。

公开(公告)号：US07820020B2

公开(公告)日：2010-10-26

申请号：US11140513

申请日：2005-05-25

申请人： Karl M. Brown ,  John Pipitone ,  Vineet Mehta ,  Ralf Hofmann

发明人： Karl M. Brown ,  John Pipitone ,  Vineet Mehta ,  Ralf Hofmann

IPC分类号： C23C14/00

CPC分类号： H01J37/3408 ,  C23C14/046 ,  C23C14/345 ,  C23C14/358 ,  H01J37/32082 ,  H01J37/32706 ,  H01L21/2855 ,  H01L21/76843 ,  H01L21/76844

摘要： A method of performing physical vapor deposition of copper onto an integrated circuit in a vacuum chamber of a plasma reactor includes providing a copper target near a ceiling of the chamber, placing an integrated circuit wafer on a wafer support pedestal facing the target near a floor of the chamber, introducing a carrier gas into the vacuum chamber having an atomic weight substantially less than the atomic weight of copper, maintaining a target-sputtering plasma at the target to produce a stream comprising at least one of copper atoms and copper ions flowing from the target toward the wafer support pedestal for vapor deposition, maintaining a wafer-sputtering plasma near the wafer support pedestal by capacitively coupling plasma RF source power to the wafer-sputtering plasma, and accelerating copper ions of the wafer sputtering plasma in a direction normal to a surface of the wafer support pedestal.

摘要翻译： 在等离子体反应器的真空室中将铜物理气相沉积到集成电路上的方法包括在室的顶部附近提供铜靶，将集成电路晶片放置在面向靶的晶片支撑台座附近， 所述室将原料重量比原子重量小得多的真空室引入到真空室中，将目标溅射等离子体保持在靶材上，以产生包含铜原子和铜离子中的至少一种的流 目标朝向用于气相沉积的晶片支撑基座，通过将等离子体RF源功率电容耦合到晶片溅射等离子体，将晶圆溅射等离子体沿着垂直于晶片溅射等离子体的方向 晶片支撑座的表面。

公开(公告)号：US20100089315A1

公开(公告)日：2010-04-15

申请号：US12563531

申请日：2009-09-21

申请人： Karl M. Brown ,  Jason Schaller

发明人： Karl M. Brown ,  Jason Schaller

IPC分类号： B05C11/00

CPC分类号： H01L21/68785 ,  C23C14/50 ,  H01J37/32477 ,  H01L21/67069 ,  H01L21/6719 ,  H01L21/68707

摘要： A shutter disk suitable for shield a substrate support in a physical vapor deposition chamber is provided. In one embodiment, the shutter disk includes a disk-shaped body having an outer diameter disposed between a top surface and a bottom surface. The disk-shape body includes a double step connecting the bottom surface to the outer diameter.

摘要翻译： 提供了适用于在物理气相沉积室中屏蔽衬底支架的快门盘。 在一个实施例中，快门盘包括具有设置在顶表面和底表面之间的外径的盘形主体。 盘状体包括将底面与外径连接的双重步骤。

公开(公告)号：US07541289B2

公开(公告)日：2009-06-02

申请号：US11626151

申请日：2007-01-23

申请人： Karl M. Brown ,  John A. Pipitone ,  Vineet H. Mehta

发明人： Karl M. Brown ,  John A. Pipitone ,  Vineet H. Mehta

IPC分类号： H01L21/302

CPC分类号： H01L21/02063 ,  H01J37/32091 ,  H01J37/32706 ,  H01J2237/20

摘要： A method of fabricating multilayer interconnect structures on a semiconductor wafer begins by roughening the interior surface of a metal lid to a surface roughness in excess of SA 2000 with a reentrant surface profile, and installing the metal lid as the ceiling of a plasma clean reactor chamber having a wafer pedestal facing the interior surface of the ceiling.

摘要翻译： 在半导体晶片上制造多层互连结构的方法首先通过将金属盖的内表面粗糙化为超过SA 2000的表面粗糙度而具有折入表面轮廓，并且将金属盖安装为等离子体清洁反应器室的天花板 具有面向天花板内表面的晶片基座。

公开(公告)号：US07268076B2

公开(公告)日：2007-09-11

申请号：US11052012

申请日：2005-02-03

申请人： Karl M. Brown ,  John Pipitone ,  Vineet Mehta

发明人： Karl M. Brown ,  John Pipitone ,  Vineet Mehta

IPC分类号： H01L21/44

CPC分类号： H01L21/2855 ,  C23C14/345 ,  C23C14/354 ,  H01J37/32706 ,  H01J37/3408 ,  H01L21/76843 ,  H01L21/76844 ,  H01L21/76865

摘要： Physical vapor deposition and re-sputtering of a barrier layer in an integrated circuit is performed by providing a metal target near a ceiling of the chamber and a wafer support pedestal facing the target near a floor of the chamber. A process gas is introduced into said vacuum chamber. A target-sputtering plasma is maintained at the target to produce a stream of principally neutral atoms flowing from the target toward the wafer for vapor deposition. A wafer-sputtering plasma is maintained near the wafer support pedestal to produce a stream of sputtering ions toward the wafer support pedestal for re-sputtering. The sputtering ions are accelerated across a plasma sheath at the wafer in a direction normal to a surface of the wafer to render the sputter etching highly selective for horizontal surfaces.

摘要翻译： 在集成电路中的阻挡层的物理气相沉积和再溅射通过在室的顶部附近提供金属靶和在腔室的地板附近面向靶的晶片支撑台座来执行。 将工艺气体引入所述真空室。 目标溅射等离子体保持在目标上以产生从目标流向晶片的主要中性原子的气流用于气相沉积。 在晶片支撑基座附近保持晶片溅射等离子体，以产生朝向晶片支撑基座的溅射离子流，用于再溅射。 溅射离子在垂直于晶片表面的方向上在晶片处跨越等离子体护套加速，以使溅射蚀刻对于水平表面具有高选择性。