公开(公告)号：US07369595B2

公开(公告)日：2008-05-06

申请号：US11544832

申请日：2006-10-05

申请人： Ki Soo Kim ,  Won Seok Han ,  Sung Bock Kim ,  Dae Kon Oh

发明人： Ki Soo Kim ,  Won Seok Han ,  Sung Bock Kim ,  Dae Kon Oh

IPC分类号： H01S5/00 ,  H01S3/08

CPC分类号： H01S5/183 ,  B82Y20/00 ,  H01S5/34306

摘要： A DBR structure in a VCSEL diode, a method of manufacturing the DBR structure, and a VCSEL diode are provided. The DBR structure in the VCSEL diode includes: an InAlGaAs layer having a predetermined refractive index and disposed on an InP substrate; a first InAlAs layer having a lower refractive index than the InAlGaAs layer and disposed on the InAlGaAs layer; an InP layer having a lower refractive index than the InAlGaAs layer and disposed on the first InAlAs layer; and a second InAlAs layer having a lower refractive index than the InAlGaAs layer and disposed on the InP layer. Thus, the DBR structure can reduce optical loss due to type-II band line-up at a junction between the InAlGaAs layer and the InP layer, and thus improve device characteristics.

摘要翻译： 提供VCSEL二极管中的DBR结构，制造DBR结构的方法和VCSEL二极管。 VCSEL二极管中的DBR结构包括：具有预定折射率并设置在InP衬底上的InAlGaAs层; 第一InAlAs层，其折射率低于InAlGaAs层并且设置在InAlGaAs层上; InP层，其折射率低于InAlGaAs层并且设置在第一InAlAs层上; 和具有比InAlGaAs层低的折射率的第二InAlAs层并且设置在InP层上。 因此，DBR结构可以减少在InAlGaAs层和InP层之间的结上的II型带阵列引起的光损耗，从而提高器件特性。

公开(公告)号：US20130251903A1

公开(公告)日：2013-09-26

申请号：US13885740

申请日：2011-11-17

申请人： Won Seok Han

发明人： Won Seok Han

IPC分类号： C23C16/18

CPC分类号： C23C16/18 ,  C07F13/005 ,  C07F15/045 ,  C07F15/065 ,  C23C16/06 ,  C23C16/406

摘要： The present invention relates to a diazadiene (DAD)-based metal compound, to a method for preparing the same and to a method for forming a thin film using the same. The diazadiene (DAD)-based metal compound of the present invention is provided in a gaseous state to be formed into a metal thin film or a metal oxide thin film by chemical vapor deposition or atomic layer deposition. Particularly, the diazadiene-based organic metal compound of the present invention has advantages in that it may be formed into a metal thin film or a metal oxide thin film and it can be prepared in a relatively inexpensive way without using highly toxic ligands.

摘要翻译： 本发明涉及基于二亚甲基二（DAD）的金属化合物及其制备方法以及使用其制备薄膜的方法。 本发明的二氮二烯（DAD）类金属化合物以气态提供，通过化学气相沉积或原子层沉积形成金属薄膜或金属氧化物薄膜。 特别地，本发明的二硫化二烯类有机金属化合物具有以下优点：其可以形成为金属薄膜或金属氧化物薄膜，并且可以以相对便宜的方式制备而不使用高毒性配体。

公开(公告)号：US07776752B2

公开(公告)日：2010-08-17

申请号：US11635223

申请日：2006-12-07

申请人： O Kyun Kwon ,  Mi Ran Park ,  Won Seok Han ,  Hyun Woo Song

发明人： O Kyun Kwon ,  Mi Ran Park ,  Won Seok Han ,  Hyun Woo Song

IPC分类号： H01L21/302

CPC分类号： H01L21/30621 ,  H01S5/183 ,  H01S5/2081

摘要： Provided are an etching method for a multi-layered structure of semiconductors in groups III-V and a method of manufacturing a VCSEL using the etching method. According to the etching method, a stacked structure including a first semiconductor layer and a second semiconductor layer is exposed to a plasma of a mixture consisting of Cl2, Ar, CH4, and H2 to etch the stacked structure, so that a mirror layer of the VCSEL is formed. The first semiconductor layer is formed of a semiconductor in groups III-V and the second semiconductor layer is formed of a semiconductor in groups III-V, other than the semiconductor of the first semiconductor layer. At least part of a lower mirror layer, a lower electrode layer, an optical gain layer, an upper electrode layer, and an upper mirror layer is etched using one time of an etching process, so that a clean and smooth etched surface is obtained.

摘要翻译： 提供了III-V族半导体的多层结构的蚀刻方法和使用该蚀刻方法制造VCSEL的方法。 根据蚀刻方法，将包括第一半导体层和第二半导体层的堆叠结构暴露于由Cl 2，Ar，CH 4和H 2组成的混合物的等离子体中，以蚀刻层叠结构，使得 形成VCSEL。 第一半导体层由III-V族的半导体形成，第二半导体层由除了第一半导体层的半导体之外的III-V族的半导体形成。 使用一次蚀刻工艺蚀刻下镜面层，下电极层，光增益层，上电极层和上镜层的至少一部分，从而获得清洁且光滑的蚀刻表面。

公开(公告)号：US07394104B2

公开(公告)日：2008-07-01

申请号：US11698418

申请日：2007-01-25

申请人： Hyun Woo Song ,  O Kyun Kwon ,  Won Seok Han ,  Sang Hee Park ,  Jong Hee Kim ,  Jae Heon Shin ,  Young Gu Ju

发明人： Hyun Woo Song ,  O Kyun Kwon ,  Won Seok Han ,  Sang Hee Park ,  Jong Hee Kim ,  Jae Heon Shin ,  Young Gu Ju

IPC分类号： H01L27/15

CPC分类号： H01L33/145 ,  H01S5/18308 ,  H01S5/18316 ,  H01S5/18347 ,  H01S5/3095 ,  H01S2301/176

摘要： Provided is a semiconductor optical device having a current-confined structure. The device includes a first semiconductor layer of a first conductivity type which is formed on a semiconductor substrate and includes one or more material layers, a second semiconductor layer which is formed on the first semiconductor layer and includes one or more material layers, and a third semiconductor layer of a second conductivity type which is formed on the second semiconductor layer and includes one or more material layers. One or more layers among the first semiconductor layer, the second semiconductor, and the third semiconductor layer have a mesa structure. A lateral portion of at least one of the material layers constituting the first semiconductor layer, the second semiconductor layer, and the third semiconductor layer is recessed, and the recess is partially or wholly filled with an oxide layer, a nitride layer or a combination of them. The semiconductor optical device having the current-confined region is mechanically reliable, highly thermally conductive, and commercially preferable and can be used in a wavelength range for optical communications.

摘要翻译： 提供了具有限流结构的半导体光学器件。 该器件包括：第一导电类型的第一半导体层，其形成在半导体衬底上并且包括一个或多个材料层;第二半导体层，形成在第一半导体层上并包括一个或多个材料层;第三半导体层， 第二导电类型的半导体层，其形成在第二半导体层上并且包括一个或多个材料层。 第一半导体层，第二半导体和第三半导体层中的一层或多层具有台面结构。 构成第一半导体层，第二半导体层和第三半导体层的至少一个材料层的侧面部分被凹入，并且凹部被部分地或全部地填充有氧化物层，氮化物层或者 他们。 具有电流限制区域的半导体光学器件是机械可靠的，高导热性的，并且是商业上优选的，并且可以用于光通信的波长范围。

公开(公告)号：US07230276B2

公开(公告)日：2007-06-12

申请号：US10699127

申请日：2003-10-30

申请人： Hyun Woo Song ,  O Kyun Kwon ,  Won Seok Han ,  Sang Hee Park ,  Jong Hee Kim ,  Jae Heon Shin ,  Young Gu Ju

发明人： Hyun Woo Song ,  O Kyun Kwon ,  Won Seok Han ,  Sang Hee Park ,  Jong Hee Kim ,  Jae Heon Shin ,  Young Gu Ju

IPC分类号： H01L27/15

CPC分类号： H01L33/145 ,  H01S5/18308 ,  H01S5/18316 ,  H01S5/18347 ,  H01S5/3095 ,  H01S2301/176

摘要： Provided is a semiconductor optical device having a current-confined structure. The device includes a first semiconductor layer of a first conductivity type which is formed on a semiconductor substrate and includes one or more material layers, a second semiconductor layer which is formed on the first semiconductor layer and includes one or more material layers, and a third semiconductor layer of a second conductivity type which is formed on the second semiconductor layer and includes one or more material layers. One or more layers among the first semiconductor layer, the second semiconductor, and the third semiconductor layer have a mesa structure. A lateral portion of at least one of the material layers constituting the first semiconductor layer, the second semiconductor layer, and the third semiconductor layer is recessed, and the recess is partially or wholly filled with an oxide layer, a nitride layer or a combination of them. The semiconductor optical device having the current-confined region is mechanically reliable, highly thermally conductive, and commercially preferable and can be used in a wavelength range for optical communications.