公开(公告)号：US07237564B1

公开(公告)日：2007-07-03

申请号：US10371679

申请日：2003-02-20

申请人： Tom Anderson ,  John M. Boyd

发明人： Tom Anderson ,  John M. Boyd

IPC分类号： B08B3/00 ,  B06B1/06

CPC分类号： B06B1/0622 ,  Y10S134/902

摘要： A transducer for use in an acoustic energy cleaner is provided. The transducer includes a resonator and a plurality of crystals bonded to a surface of the resonator. The plurality of crystals is configured to be bonded to the surface of the resonator in a staggered arrangement with respect to each other. In one embodiment, the plurality of crystals is bonded to the surface of the resonator in a horizontally staggered arrangement. In another embodiment, the plurality of crystals is bonded to the surface of the resonator in a vertically staggered arrangement.

摘要翻译： 提供了一种用于声能清洁器的换能器。 换能器包括共振器和结合到谐振器表面的多个晶体。 多个晶体被配置为以彼此相互错开的布置结合到谐振器的表面。 在一个实施例中，多个晶体以水平交错布置结合到谐振器的表面。 在另一个实施例中，多个晶体以垂直交错布置结合到谐振器的表面。

公开(公告)号：US09359673B2

公开(公告)日：2016-06-07

申请号：US13489235

申请日：2012-06-05

申请人： Hyungsuk Alexander Yoon ,  Mikhail Korolik ,  Fritz C. Redeker ,  John M. Boyd ,  Yezdi Dordi

发明人： Hyungsuk Alexander Yoon ,  Mikhail Korolik ,  Fritz C. Redeker ,  John M. Boyd ,  Yezdi Dordi

IPC分类号： C23C16/455 ,  C23C16/54 ,  H01L21/67 ,  H01L21/285 ,  H01L21/768

CPC分类号： C23C16/45551 ,  C23C16/45517 ,  C23C16/54 ,  H01L21/28562 ,  H01L21/76843

摘要： A proximity heads for dispensing reactants and purging gas to deposit a thin film by Atomic Layer Deposition (ALD) includes a plurality of sides. Extending over a portion of the substrate region and being spaced apart from the portion of the substrate region when present, the proximity head is rotatable so as to place each side in a direction of the substrate region, and is disposed in a vacuum chamber coupled to a carrier gas source to sustain a pressure for the proximity head during operation. Each side of the proximity head includes a gas conduit through which the reactant gas and the purging gas are sequentially dispensed, and at least two separate vacuum conduits on each side of the gas conduit to pull excess reactant gas, purging gas, or deposition byproducts from a reaction volume between a surface of the proximity head facing the substrate and the substrate.

摘要翻译： 用于分配反应物和吹扫气体以通过原子层沉积（ALD）沉积薄膜的邻近头包括多个侧面。 当衬底区域的一部分延伸并与衬底区域的部分间隔开时，邻近头部是可旋转的，以便将每个侧面放置在衬底区域的方向上，并且设置在耦合到 载体气体源，用于在操作期间维持邻近头部的压力。 邻近头部的每一侧包括气体导管，反应气体和净化气体依次分配通过该气体导管，以及在气体导管的每一侧上的至少两个独立的真空管道，以将过量的反应气体，净化气体或沉积副产物从 面对衬底的接近头的表面与衬底之间的反应体积。

公开(公告)号：US08287647B2

公开(公告)日：2012-10-16

申请号：US11736511

申请日：2007-04-17

申请人： Hyungsuk Alexander Yoon ,  Mikhail Korolik ,  Fritz C. Redeker ,  John M. Boyd ,  Yezdi Dordi

发明人： Hyungsuk Alexander Yoon ,  Mikhail Korolik ,  Fritz C. Redeker ,  John M. Boyd ,  Yezdi Dordi

IPC分类号： C23C16/00 ,  H01L21/306

CPC分类号： C23C16/45551 ,  C23C16/45517 ,  C23C16/54 ,  H01L21/28562 ,  H01L21/76843

摘要： The embodiments provide apparatus and methods of depositing conformal thin film on interconnect structures by providing processes and systems using an atomic layer deposition (ALD). More specifically, each of the ALD systems includes a proximity head that has a small reaction volume right above an active process region of the substrate surface. The proximity head dispenses small amount of reactants and purging gas to be distributed and pumped away from the small reaction volume between the proximity head and the substrate in relatively short periods, which increases the through-put. In an exemplary embodiment, a proximity head for dispensing reactants and purging gas to deposit a thin film by atomic layer deposition (ALD) is provided. The proximity head is configured to sequentially dispensing a reactant gas and a purging gas to deposit a thin ALD film under the proximity head. The proximity head covers an active process region of a substrate surface. The proximity head also includes at least one vacuum channel to pull excess reactant gas, purging gas, or deposition byproducts from a reaction volume between a surface of the proximity head facing the substrate and the substrate. The proximity head includes a plurality of sides, each side being configured to dispense either a reactant gas or a purging gas on the substrate surface underneath the proximity head. Each side has at least one vacuum channel.

摘要翻译： 实施例提供了通过提供使用原子层沉积（ALD）的工艺和系统在互连结构上沉积保形薄膜的装置和方法。 更具体地，每个ALD系统包括在基板表面的有效工艺区域正上方具有小的反应体积的邻近头部。 接近头部在较短的时间内分配少量的反应物和净化气体，以在相对较短的时间段内分配和泵送离开较小反应体积，这增加了通过量。 在一个示例性实施例中，提供了用于分配反应物和吹扫气体以通过原子层沉积（ALD）沉积薄膜的邻近头。 接近头被配置为顺序地分配反应气体和净化气体，以在邻近头部附近沉积薄的ALD膜。 接近头覆盖衬底表面的活性过程区域。 接近头还包括至少一个真空通道，以从邻近头部的面向衬底的表面和衬底之间的反应体积拉出过量的反应气体，吹扫气体或沉积副产物。 邻近头部包括多个侧面，每个侧面被构造成在邻近头部下方的基底表面上分配反应物气体或净化气体。 每侧至少有一个真空通道。

公开(公告)号：US08069813B2

公开(公告)日：2011-12-06

申请号：US11735984

申请日：2007-04-16

申请人： William Thie ,  John M. Boyd ,  Fritz C. Redeker ,  Yezdi Dordi ,  John Parks ,  Tiruchirapalli Arunagiri ,  Aleksander Owczarz ,  Todd Balisky ,  Clint Thomas ,  Jacob Wylie ,  Alan M. Schoepp

发明人： William Thie ,  John M. Boyd ,  Fritz C. Redeker ,  Yezdi Dordi ,  John Parks ,  Tiruchirapalli Arunagiri ,  Aleksander Owczarz ,  Todd Balisky ,  Clint Thomas ,  Jacob Wylie ,  Alan M. Schoepp

IPC分类号： B05C3/00

CPC分类号： H01L21/288 ,  C23C18/1619 ,  C23C18/1632 ,  H01L21/76873

摘要： A dry-in/dry-out system is disclosed for wafer electroless plating. The system includes an upper zone for wafer ingress/egress and drying operations. Proximity heads are provided in the upper zone to perform the drying operations. The system also includes a lower zone for electroless plating operations. The lower zone includes an electroless plating apparatus that implements a wafer submersion by fluid upwelling method. The upper and lower zones of the system are enclosed by a dual-walled chamber, wherein the inner wall is a chemically inert plastic and the outer wall is a structural metal. The system interfaces with a fluid handling system which provides the necessary chemistry supply and control for the system. The system is ambient controlled. Also, the system interfaces with an ambient controlled managed transfer module (MTM).

摘要翻译： 公开了一种用于晶片无电镀的干/干输出系统。 该系统包括用于晶片入口/出口和干燥操作的上部区域。 靠近头部设置在上部区域以执行干燥操作。 该系统还包括用于无电镀操作的下部区域。 下部区域包括通过流体上升流法实现晶片浸没的化学镀设备。 系统的上部和下部区域由双壁室围住，其中内壁是化学惰性塑料，外壁是结构金属。 系统与流体处理系统接口，为系统提供必要的化学物质供应和控制。 系统是环境控制的。 此外，系统与环境受控的托管传输模块（MTM）接口。

公开(公告)号：US08026605B2

公开(公告)日：2011-09-27

申请号：US11638413

申请日：2006-12-14

申请人： Yezdi Dordi ,  John M. Boyd ,  Fritz C. Redeker ,  William Thie ,  Tiruchirapalli Arunagiri ,  Hyungsuk Alexander Yoon

发明人： Yezdi Dordi ,  John M. Boyd ,  Fritz C. Redeker ,  William Thie ,  Tiruchirapalli Arunagiri ,  Hyungsuk Alexander Yoon

IPC分类号： H01L23/535 ,  H01L21/4763

CPC分类号： H01L23/53238 ,  H01L21/28562 ,  H01L21/76846 ,  H01L21/76856 ,  H01L21/76862 ,  H01L21/76873 ,  H01L21/76874 ,  H01L2221/1089 ,  H01L2924/0002 ,  H01L2924/00

摘要： An interconnect structure is provided, including a layer of dielectric material having at least one opening and a first barrier layer on sidewalls defining the opening. A ruthenium-containing second barrier layer overlays the first barrier layer, the second barrier layer having a ruthenium zone, a ruthenium oxide zone, and a ruthenium-rich zone. The ruthenium zone is interposed between the first barrier layer and the ruthenium oxide zone. The ruthenium oxide zone is interposed between the ruthenium zone and the ruthenium-rich zone.

摘要翻译： 提供互连结构，包括具有至少一个开口的介电材料层和在限定开口的侧壁上的第一阻挡层。 含钌的第二阻挡层覆盖第一阻挡层，第二阻挡层具有钌区，氧化钌区和富钌区。 钌区介于第一阻挡层和氧化钌区之间。 钌氧化物区位于钌区和富钌区之间。

公开(公告)号：US20080271992A1

公开(公告)日：2008-11-06

申请号：US10882712

申请日：2004-06-30

申请人： Yezdi N. Dordi ,  Fred C. Redeker ,  John M. Boyd ,  Robert Maraschin ,  Carl Woods

发明人： Yezdi N. Dordi ,  Fred C. Redeker ,  John M. Boyd ,  Robert Maraschin ,  Carl Woods

IPC分类号： C25D17/00

CPC分类号： C25D17/14 ,  C25D5/06 ,  C25D7/123 ,  C25D17/001 ,  C25D21/12 ,  H01L21/2885

摘要： An electroplating apparatus for electroplating a surface of a wafer is provided. The wafer is capable of being electrically charged as a cathode. The electroplating apparatus includes a plating head capable of being positioned either over or under the surface of a wafer and capable of being electrically charged as an anode. The plating head is capable of enabling metallic plating between the surface of the wafer and the plating head when the wafer and plating head are charged. The plating head further comprises a voltage sensor pair capable of sensing a voltage present between the plating head and the surface of the wafer, and a controller capable of receiving data from the voltage sensor pair. The data received from the voltage sensor pair is used by the controller to maintain a substantially constant voltage to be applied by the anode when the plating head is placed in positions over the surface of the wafer. A method of electroplating a wafer is also provided.

摘要翻译： 提供了一种用于电镀晶片表面的电镀设备。 该晶片能够作为阴极充电。 电镀装置包括能够位于晶片表面的上方或下方并能够作为阳极带电的电镀头。 当晶片和电镀头被充电时，电镀头能够在晶片的表面和电镀头之间实现金属电镀。 电镀头还包括能够感测电镀头和晶片表面之间的电压的电压传感器对，以及能够从电压传感器对接收数据的控制器。 当电镀头位于晶片表面上方时，由电压传感器对接收的数据由控制器使用以保持由阳极施加的基本上恒定的电压。 还提供了一种电镀晶片的方法。

公开(公告)号：US20080260967A1

公开(公告)日：2008-10-23

申请号：US11736519

申请日：2007-04-17

申请人： Hyungsuk Alexander Yoon ,  Mikhail Korolik ,  Fritz C. Redeker ,  John M. Boyd ,  Yezdi Dordi

发明人： Hyungsuk Alexander Yoon ,  Mikhail Korolik ,  Fritz C. Redeker ,  John M. Boyd ,  Yezdi Dordi

IPC分类号： C23C16/50 ,  H05H1/24

CPC分类号： C23C16/4412 ,  C23C16/45544 ,  C23C16/45595 ,  H01J37/3244

摘要： The embodiments fill the needs of systems and processes that perform substrate surface treatment to provide homogenous, clean, and sometimes activated surface in order to provide good adhesion between layers to improve metal migration and void propagation. In one exemplary embodiment, a chamber for performing surface treatment and film deposition is provided. The chamber includes a first proximity head for substrate surface treatment configured to dispense a first treatment gas to treat a portion of a surface of a substrate under the first proximity head for substrate surface treatment. The chamber also includes a first proximity head for atomic layer deposition (ALD) configured to sequentially dispensing a first reactant gas and a first purging gas to deposit a first ALD film under the second proximity head for ALD.

摘要翻译： 这些实施例填补了执行基板表面处理以提供均匀，清洁和有时被激活的表面的系统和工艺的需要，以便在层之间提供良好的粘附以改善金属迁移和空隙传播。 在一个示例性实施例中，提供了用于进行表面处理和膜沉积的室。 腔室包括用于衬底表面处理的第一邻近头部，其构造成分配第一处理气体以处理第一邻近头部下方的衬底表面的一部分用于衬底表面处理。 该室还包括用于原子层沉积（ALD）的第一邻近头，其被配置成顺序地分配第一反应气体和第一吹扫气体，以将第一ALD膜沉积在ALD的第二接近头下方。

公开(公告)号：US06976906B2

公开(公告)日：2005-12-20

申请号：US10681719

申请日：2003-10-07

申请人： John M. Boyd ,  David Wei ,  Yehiel Gotkis

发明人： John M. Boyd ,  David Wei ,  Yehiel Gotkis

IPC分类号： B24B21/04 ,  B24B37/04 ,  B24B5/00

CPC分类号： B24B21/04 ,  B24B37/32

摘要： A chemical mechanical planarization (CMP) system is provided. The system includes a polishing surface and a platen disposed along an underside of the polishing surface. A retaining ring surrounds the platen. The retaining ring includes a lower annular sleeve and an upper annular sleeve moveably disposed over the lower annular sleeve. A method for reducing a consumption of compressed dry air (CDA) during a chemical mechanical planarization (CMP) operation is also described.

摘要翻译： 提供化学机械平面化（CMP）系统。 该系统包括沿抛光表面的下侧设置的抛光表面和压板。 保持环围绕压板。 保持环包括下环形套筒和可移动地设置在下环形套筒上方的上环形套筒。 还描述了在化学机械平坦化（CMP）操作期间减少压缩干燥空气（CDA）的消耗的方法。

公开(公告)号：US06858091B2

公开(公告)日：2005-02-22

申请号：US10013211

申请日：2001-12-07

申请人： John M. Boyd ,  Mike Ravkin ,  Katrina A. Mikhaylich

发明人： John M. Boyd ,  Mike Ravkin ,  Katrina A. Mikhaylich

IPC分类号： H01L21/304 ,  H01L21/00 ,  H01L21/02 ,  H01L21/306 ,  H01L21/311 ,  H01L21/321 ,  B08B3/00

CPC分类号： H01L21/02057 ,  H01L21/02063 ,  H01L21/02074 ,  H01L21/67028 ,  H01L21/67034 ,  Y10S134/902

摘要： A method for minimizing galvanic corrosion effects in a single-wafer cleaning system is provided. The method initiates with spraying a cleaning chemistry containing corrosion inhibitors onto a surface of a wafer. Then, the surface of the wafer is exposed to the cleaning chemistry for a period of time. Next, a concentration gradient at an interface of the cleaning chemistry and the surface of the wafer is refreshed. Then, a rinsing agent and a drying agent are applied simultaneously to remove the cleaning chemistry, wherein the drying agent dries the surface of the wafer prior to a concentration of the corrosion inhibitors being diluted to a level insufficient to provide corrosion protection.

摘要翻译： 提供了一种用于最小化单晶片清洁系统中的电偶腐蚀效应的方法。 该方法通过将含有腐蚀抑制剂的清洁化学品喷涂到晶片的表面上而开始。 然后，将晶片的表面暴露于清洁化学品一段时间。 接下来，刷新清洁化学品和晶片表面的界面处的浓度梯度。 然后，同时施加漂洗剂和干燥剂以除去清洁化学品，其中干燥剂在将腐蚀抑制剂的浓度稀释至不足以提供防腐蚀的水平之前将晶片的表面干燥。

公开(公告)号：US06857435B2

公开(公告)日：2005-02-22

申请号：US10803118

申请日：2004-03-16

申请人： John M. Boyd ,  John deLarios ,  Carl Woods

发明人： John M. Boyd ,  John deLarios ,  Carl Woods

IPC分类号： B08B3/02 ,  B08B3/12 ,  C25F5/00

CPC分类号： B08B3/12 ,  B08B3/02 ,  B08B2203/0288 ,  Y10S134/902

摘要： A method for cleaning a semiconductor substrate with a sonic cleaner is provided. The method initiates by introducing a cooling fluid into an inner jacket region of a sonic cleaner to cool a sonic resonator positioned within the inner jacket region. Then, a cleaning agent is introduced into an outer jacket region of the sonic cleaner to clean a semiconductor substrate. Next, a cooling fluid/cleaning agent interface is defined at an orifice location between the inner jacket region and the outer jacket region. Then, sonic energy from the resonator is transmitted to the cleaning agent through the interface at the orifice. Next, the cleaning agent is applied to the semiconductor substrate.

摘要翻译： 提供了一种用声波清洁器清洗半导体衬底的方法。 该方法通过将冷却流体引入到声音清洁器的内护套区域中来冷却位于内护套区域内的声波谐振器。 然后，将清洁剂引入到声音清洁器的外护套区域中以清洁半导体衬底。 接下来，在内护套区域和外护套区域之间的孔口部位处限定冷却流体/清洁剂界面。 然后，来自谐振器的声能通过孔口处的界面传递到清洁剂。 接下来，将清洁剂施加到半导体衬底。