摘要:
A voltage regulator regulates voltage at a node and has circuitry coupled to the node for providing a current to the node. A regulating transistor coupled between the node and a first power supply voltage terminal has a disabling transistor coupled in parallel and is selectively disabled by directly connecting the first power supply voltage terminal to the node. An inverting stage has an output connected to the regulating transistor. A load transistor has a first current electrode coupled to a second power supply voltage terminal, and a control electrode and second current electrode connected together and coupled to an input of the inverting stage. A sensing transistor has a first current electrode coupled to the second current electrode of the load transistor, a control electrode connected directly to the node and a second current electrode coupled to the first power supply voltage terminal.
摘要:
An array of memory bit cells are operable to provide a memory device having data shifting capability, so that data can be flexibly stored and retrieved from the memory device in both parallel and serial fashions. The memory array can thus be used for conventional memory storage operations, and also for operations, such as matrix operations, that provide for the alteration of the arrangement of stored data elements.
摘要:
A memory system includes a memory array. The memory array includes a plurality of storage locations arranged in rows and columns. The memory system includes error correction circuitry that generates correct data bits from data bits of the memory array and error correction bits. The data bits received by the error correction circuitry are divided in subgroups where each subgroup of data bits is used to generate a subgroup of the correct data bits. The subgroups of data bits are stored in a row of the memory array at locations that are interleaved with each other.
摘要:
A method and data processing system for accessing an entry in a memory array is provided using base and offset addresses without adding the base and offset addresses. PGZO encoding is performed on the address bits of the operands. The PGZO values are evaluated using wordline generators resulting in a plurality of possible memory array entry addresses. In parallel with the PGZO operations, a carry value is generated using other bits in the operands. The result of the carry operation determines which of the possible memory array entries is selected from the memory array.
摘要:
A method and data processing system for accessing an entry in a memory array by placing a tag memory unit (114) in parallel with an operand adder circuit (112) to enable tag lookup and generation of speculative way hit/miss information (126) directly from the operands (111, 113) without using the output sum of the operand adder. PGZ-encoded address bits (0:51) from the operands (111, 113) are applied with a carry-out value (Cout48) to a content-addressable memory array (114) to generate two speculative hit/miss signals. A sum value (EA51) computed from the least significant base and offset address bits determines which of the speculative hit/miss signals is selected for output (126).
摘要:
An electronic circuit includes a plurality of circuit blocks, a plurality of bias circuits, a switching circuit, and plurality of transistors. The plurality of circuit blocks each includes a high power terminal and a low power terminal. The switching circuit includes a plurality of switches for selectively coupling a bias circuit of the plurality of bias circuits to the low power terminal of a circuit block of the plurality of circuit blocks. Each bias circuit of the plurality of bias circuits is selectively couplable to the low power terminal of each of the plurality of circuit blocks. Each transistor of the plurality of transistors has a first current terminal coupled to a circuit ground terminal, and each transistor of the plurality of transistors has a control terminal for controlling the conductivity of the plurality of the transistors by a bias circuit of the plurality of bias circuits.
摘要:
A system is used to determine if a sum of a first operand and a second operand is the same as a third operand wherein a comparison to the third operand is of variable length. This is particularly useful in a content addressable memory (CAM) where the likelihood of hit is commonly improved over a set associative cache and allows for the CAM to identify different things. For example, an entry can be one length to identify a page of a memory and another entry be a different length to identify a page of memory. This is better understood by reference to the following description and the drawings.
摘要:
A cache design is described in which corresponding accesses to tag and information arrays are phased in time, and in which tags are retrieved (typically speculatively) from a tag array without benefit of an effective address calculation subsequently used for a corresponding retrieval from an information array. In some exploitations, such a design may allow cycle times (and throughput) of a memory subsystem to more closely match demands of some processor and computation system architectures. In some cases, phased access can be described as pipelined tag and information array access, though strictly speaking, indexing into the information array need not depend on results of the tag array access. Our techniques seek to allow early (indeed speculative) retrieval from the tag array without delays that would otherwise be associated with calculation of an effective address eventually employed for a corresponding retrieval from the information array. Speculation can be resolved using the eventually calculated effective address or using separate functionality. In some embodiments, we use calculated effective addresses for way selection based on tags retrieved from the tag array.
摘要:
A storage element (10) includes a first latch (12) and a second latch (14). The first latch (12) is coupled to a first power supply voltage terminal for receiving a first power supply voltage. The second latch (14) is coupled to a second power supply voltage terminal. The second power supply voltage terminal for receiving a second power supply voltage that is lower than the first power supply voltage. During a normal mode of operation, the second power supply voltage is not provided to the second latch. During a low power mode of operation data is transferred from the first latch to the second latch and the first latch is powered down. The data is retained by the second latch while in low power mode.
摘要:
A multiplexed data flip-flop circuit (500) is described in which a multiplexer (510) outputs functional or scan data, a master latch (520) generates a master latch output signal at a hold time under control of a master clock signal, a slave latch (540) generates a flip flop output signal at a launch time under control of a slave clock signal, clock generation circuitry (550) generates a second clock signal that has a DC state during a functional mode and has a switching state during a scan mode, and data propagation logic circuitry (564) uses the first and second clock signals to generate the master and slave clock signals during a scan mode to delay the launch time of the slave latch with respect to the hold time of the master latch.