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23 条记录 (耗时 0.019 秒)

    ERROR CORRECTING LOGIC SYSTEM
    14.
    发明申请
    ERROR CORRECTING LOGIC SYSTEM 有权
    错误修正逻辑系统

    公开(公告)号：US20090002015A1

    公开(公告)日：2009-01-01

    申请号：US11850857

    申请日：2007-09-06

    申请人： Kerry Bernstein ,  Philip G. Emma ,  John A. Fifield ,  Paul D. Kartschoke ,  William A. Klaasen ,  Norman J. Rohrer

    发明人： Kerry Bernstein ,  Philip G. Emma ,  John A. Fifield ,  Paul D. Kartschoke ,  William A. Klaasen ,  Norman J. Rohrer

    IPC分类号： H03K19/003

    CPC分类号： H03K19/007

    摘要： The invention includes an error correcting logic system that allows critical circuits to be hardened with only one redundant unit and without loss of circuit performance. The system provides an interconnecting gate that suppresses a fault in one of at least two redundant dynamic logic gates that feed to the interconnecting gate. The system is applicable to dynamic or static logic systems. The system prevents propagation of a fault, and addresses not only soft errors, but noise-induced errors. Also, there is provided a design structure embodied in a machine readable medium used in a design process, and which includes such error correcting logic system.

    摘要翻译： 本发明包括纠错逻辑系统，其允许仅使用一个冗余单元来硬化关键电路并且不损失电路性能。 该系统提供互连门，其抑制馈送到互连门的至少两个冗余动态逻辑门之一的故障。 该系统适用于动态或静态逻辑系统。 该系统防止故障传播，不仅解决软错误，而且还会引起噪声引起的错误。 此外，提供了在设计过程中使用的机器可读介质中体现的设计结构，并且包括这种纠错逻辑系统。

    Error correcting logic system
    15.
    发明授权
    Error correcting logic system 有权
    错误校正逻辑系统

    公开(公告)号：US07471115B2

    公开(公告)日：2008-12-30

    申请号：US11926386

    申请日：2007-10-29

    申请人： Kerry Bernstein ,  Philip G. Emma ,  John A. Fifield ,  Paul D. Kartschoke ,  William A. Klaasen ,  Norman J. Rohrer

    发明人： Kerry Bernstein ,  Philip G. Emma ,  John A. Fifield ,  Paul D. Kartschoke ,  William A. Klaasen ,  Norman J. Rohrer

    IPC分类号： H03K19/096 ,  H03K19/094

    CPC分类号： H03K19/007

    摘要： The invention includes an error correcting logic system that allows critical circuits to be hardened with only one redundant unit and without loss of circuit performance. The system provides an interconnecting gate that suppresses a fault in one of at least two redundant dynamic logic gates that feed to the interconnecting gate. The system is applicable to dynamic or static logic systems. The system prevents propagation of a fault, and addresses not only soft errors, but noise-induced errors.

    摘要翻译： 本发明包括纠错逻辑系统，其允许仅使用一个冗余单元来硬化关键电路并且不损失电路性能。 该系统提供互连门，其抑制馈送到互连门的至少两个冗余动态逻辑门之一的故障。 该系统适用于动态或静态逻辑系统。 该系统防止故障传播，不仅解决软错误，而且还会引起噪声引起的错误。

    Diode with alterable conductivity and method of making same
    17.
    发明授权
    Diode with alterable conductivity and method of making same 失效
    具有可变导电性的二极管及其制造方法

    公开(公告)号：US06344679B1

    公开(公告)日：2002-02-05

    申请号：US09443524

    申请日：1999-11-19

    申请人： William A. Klaasen ,  Wilbur D. Pricer ,  Jed Hickory Rankin

    发明人： William A. Klaasen ,  Wilbur D. Pricer ,  Jed Hickory Rankin

    IPC分类号： G11C1706

    CPC分类号： H01L23/5258 ,  G11C17/06 ,  G11C17/16 ,  H01L23/5254 ,  H01L27/0814 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A semiconductor device (102) having a plurality of diodes (100) with alterable electrical conductivity by a source of energy (30), e.g., a laser, external to the semiconductor device. The diodes are formed and energy is applied to alter the electrical conductivity at least 10%, and preferably by several orders of magnitude. Certain embodiments (20, 40 and 50) are formed so as to function as anti-fuses, while another embodiment (60) functions as a fuse. The diodes may be formed as planar diodes (20, 40, 50 and 60) or as lateral diodes (70).

    摘要翻译： 一种具有多个二极管（100）的半导体器件（102），所述多个二极管（100）具有通过所述半导体器件外部的能量源（30）例如激光器具有可改变的导电性。 形成二极管并施加能量以改变至少10％的电导率，优选地几个数量级。 某些实施例（20,40和50）被形成为用作抗熔丝，而另一个实施例（60）用作保险丝。 二极管可以形成为平面二极管（20,40,50和60）或形成为侧向二极管（70）。

    Circuit for operating a control transistor from a fusible link
    18.
    发明授权
    Circuit for operating a control transistor from a fusible link 失效
    用于从可熔链路操作控制晶体管的电路

    公开(公告)号：US5999037A

    公开(公告)日：1999-12-07

    申请号：US904397

    申请日：1997-07-31

    申请人： Kerry Bernstein ,  Daniel C. Edelstein ,  William A. Klaasen ,  Wilbur D. Pricer

    发明人： Kerry Bernstein ,  Daniel C. Edelstein ,  William A. Klaasen ,  Wilbur D. Pricer

    IPC分类号： G11C29/00 ,  G11C7/00

    CPC分类号： G11C29/785

    摘要： A circuit for enabling a controlled transistor in response to an ablated fusible link. The fusible link is configured so that no d.c. potential resides on the link once it has been ablated. A source of alternating voltage is capacitively coupled to the fusible link and maintains the fusible link from reconnection due to dendrite formation once it is ablated. An a.c. to d.c. voltage converter is used to signal the change in condition of the fusible link, thus, actuating a control transistor of a redundant circuit element in a replacement operation.

    摘要翻译： 一种用于响应于消融的可熔链路启用受控晶体管的电路。 熔丝链接被配置为没有直流 一旦消融，电位就位于链接上。 交流电压源电容耦合到可熔链路，并且一旦烧蚀就会由于枝晶形成而使可熔连接件重新连接。 一个 到达 电压转换器用于发信号通知熔断条件的变化，从而在更换操作中致动冗余电路元件的控制晶体管。

    Detector for alpha particle or cosmic ray
    19.
    发明授权
    Detector for alpha particle or cosmic ray 失效
    α粒子或宇宙射线探测器

    公开(公告)号：US07057180B2

    公开(公告)日：2006-06-06

    申请号：US10604416

    申请日：2003-07-18

    申请人： John A. Fifield ,  Paul D. Kartschoke ,  William A. Klaasen ,  Stephen V. Kosonocky ,  Randy W. Mann ,  Jeffery H. Oppold ,  Norman J. Rohrer

    发明人： John A. Fifield ,  Paul D. Kartschoke ,  William A. Klaasen ,  Stephen V. Kosonocky ,  Randy W. Mann ,  Jeffery H. Oppold ,  Norman J. Rohrer

    IPC分类号： G01T1/24

    CPC分类号： G11C11/4125

    摘要： A detector circuit and method for detecting a silicon well voltage or current to indicate an alpha particle or cosmic ray strike of the silicon well. One significant application for the detection circuit of the present invention is for the redundancy repair latches that are used in SRAMs. The redundancy repair latches are normally written once at power-up to record failed latch data and are not normally written again. If one of the latches changes states due to an SER (Soft Error Rate-such as a strike by an alpha particle or cosmic ray) event, the repair data in the redundancy latches of the SRAM would now be incorrectly mapped. The detector circuit and method monitors the latches for the occurrence of an SER event, and responsive thereto issues a reload of the repair data to the redundancy repair latches. A first embodiment of the detector circuit differentially detects the floating voltages of first and second silicon wells during periods of non-operation of the circuits fabricated in the first and second silicon wells. In a second embodiment, a detector circuit monitors the background voltage level of a single silicon well over first and second consecutive periods of time. A second application for the detection circuit is for traditional logic circuits.

    摘要翻译： 一种用于检测硅阱电压或电流以指示硅阱的α粒子或宇宙射线冲击的检测器电路和方法。 本发明的检测电路的一个重要应用是用于SRAM中的冗余修复锁存器。 冗余修复锁存器在上电时通常写入一次，以记录失败的锁存数据，并且通常不会再次写入。 如果其中一个锁存器由于SER（软错误率（例如α粒子或宇宙射线的击穿））事件而改变状态，则SRAM的冗余锁存器中的修复数据现在将被错误地映射。 检测器电路和方法监视锁存器以发生SER事件，并且响应于此，将修复数据重新加载到冗余修复锁存器。 检测器电路的第一实施例在第一和第二硅阱中制造的电路的非操作期间差分地检测第一和第二硅阱的浮置电压。 在第二实施例中，检测器电路在第一和第二连续时间段内监测单个硅阱的背景电压电平。 检测电路的第二个应用是传统的逻辑电路。

    Semiconductor antifuse with heating element
    20.
    发明授权
    Semiconductor antifuse with heating element 失效
    半导体反熔丝加热元件

    公开(公告)号：US06750530B1

    公开(公告)日：2004-06-15

    申请号：US10250093

    申请日：2003-06-03

    申请人： William A. Klaasen ,  Alvin W. Strong ,  Ernest Y. Wu

    发明人： William A. Klaasen ,  Alvin W. Strong ,  Ernest Y. Wu

    IPC分类号： H01L2900

    CPC分类号： H01L23/5252 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A programmable device including: an antifuse; a resistive heating element having a substantially temperature to power response, the resistive heating element adjacent to but not in contact with the antifuse; and means for passing an electric current through the resistive heating element in order to generate heat to raise the temperature of the antifuse sufficiently high enough to decrease a programming voltage of the antifuse, a time the programming voltage is applied to the antifuse or both the programming voltage of the antifuse and the time the programming voltage is applied to the antifuse.

    摘要翻译： 一种可编程装置，包括：反熔丝; 电阻加热元件具有基本的温度对功率响应，电阻加热元件邻近但不与反熔丝接触; 以及用于使电流通过电阻加热元件以产生热量以使反熔丝的温度足够高以足以降低反熔丝的编程电压，编程电压施加到反熔丝或编程的时间的装置 反熔丝的电压和编程电压施加到反熔丝的时间。