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    Molecular photoresists containing nonpolymeric silsesquioxanes
    11.
    发明授权
    Molecular photoresists containing nonpolymeric silsesquioxanes 有权
    含有非聚合倍半硅氧烷的分子光刻胶

    公开(公告)号：US07141692B2

    公开(公告)日：2006-11-28

    申请号：US10721302

    申请日：2003-11-24

    申请人： Robert David Allen ,  Wu-Song Huang ,  Mahmoud Khojasteh ,  Qinghuang Lin ,  Dirk Pfeiffer ,  Ratnam Sooriyakumaran ,  Hoa D. Truong

    发明人： Robert David Allen ,  Wu-Song Huang ,  Mahmoud Khojasteh ,  Qinghuang Lin ,  Dirk Pfeiffer ,  Ratnam Sooriyakumaran ,  Hoa D. Truong

    IPC分类号： C08G77/14

    CPC分类号： C07F7/21 ,  G03F7/0045 ,  G03F7/0755 ,  Y10S430/106 ,  Y10S430/127 ,  Y10T428/31663

    摘要： A nonpolymeric silsesquioxane is provided wherein at least one silicon atom of the silsesquioxane is directly or indirectly bound to an acid-cleavable substituent RCL. The silsesquioxane has a glass transition temperature Tg of greater than 50° C., and the RCL substituent can be cleaved from the silsesquioxane at a temperature below Tg, generally at least 5° C. below Tg. The remainder of the silicon atoms within the silsesquioxane structure may be bound to additional acid-cleavable groups, acid-inert polar groups RP, and/or acid-inert nonpolar groups RNP. The nonpolymeric silsesquioxane can be a polyhedral silsesquioxane optionally having one to three open vertices, such that the polyhedron appears to be a “partial cage” structure, or a macromer of two to four such polyhedral silsesquioxanes. Photoresist compositions containing the novel nonpolymeric silsesquioxanes are also provided, as is a method for using the compositions in preparing a patterned substrate.

    摘要翻译： 提供了一种非聚合倍半硅氧烷，其中倍半硅氧烷的至少一个硅原子直接或间接地结合到酸可裂解的取代基R CL上。 倍半硅氧烷的玻璃化转变温度T 大于50℃，R CL取代基可以在低于T℃的温度下从倍半硅氧烷中裂解， 通常在T g以下至少5℃。 倍半硅氧烷结构中的剩余硅原子可以与另外的酸可裂解基团，酸惰性极性基团R和P和/或酸惰性非极性基团R SUP>。 非聚合倍半硅氧烷可以是任选具有一至三个开放顶点的多面体倍半硅氧烷，使得多面体看起来是“部分笼”结构，或两至四个这样的多面体倍半硅氧烷的大分子单体。 还提供了含有新型非聚合倍半硅氧烷的光致抗蚀剂组合物，以及在制备图案化基材时使用该组合物的方法。

    Photoresist composition
    12.
    发明授权
    Photoresist composition 失效
    光刻胶组成

    公开(公告)号：US06806026B2

    公开(公告)日：2004-10-19

    申请号：US10159635

    申请日：2002-05-31

    申请人： Robert David Allen ,  Gregory Breyta ,  Phillip Brock ,  Richard A. DiPietro ,  Debra Fenzel-Alexander ,  Carl Larson ,  David R. Medeiros ,  Dirk Pfeiffer ,  Ratnam Sooriyakumaran ,  Hoa D. Truong ,  Gregory M. Wallraff

    发明人： Robert David Allen ,  Gregory Breyta ,  Phillip Brock ,  Richard A. DiPietro ,  Debra Fenzel-Alexander ,  Carl Larson ,  David R. Medeiros ,  Dirk Pfeiffer ,  Ratnam Sooriyakumaran ,  Hoa D. Truong ,  Gregory M. Wallraff

    IPC分类号： G03F7039

    CPC分类号： C08F220/22 ,  C08F220/28 ,  G03F7/0046 ,  G03F7/0382 ,  Y10S430/108

    摘要： A photoresist composition is provided that includes a polymer having at least one acrylate or methacrylate monomer having a formula: where R1 represents hydrogen (H), a linear or branched alkyl group of 1 to 20 carbons, or a semi- or perfluorinated linear or branched alkyl group of 1 to 20 carbons; and where R2 represents an unsubstituted aliphatic group or a substituted aliphatic group having zero or one trifluoromethyl (CF3) group attached to each carbon of the substituted aliphatic group, or a substituted or unsubstituted aromatic group; and where R3 represents hydrogen (H), methyl (CH3), trifluoromethyl (CF3), difluoromethyl (CHF2), fluoromethyl (CH2F), or a semi- or perfluorinated aliphatic chain; and where R4 represents trifluoromethyl (CF3), difluoromethyl (CHF2), fluoromethyl (CH2F), or a semi- or perfluorinated substituted or unsubstituted aliphatic group. A method of patterning a substrate using the photoresist composition is also provided herein.

    摘要翻译： 提供了一种光致抗蚀剂组合物，其包括具有至少一种具有下式的丙烯酸酯或甲基丙烯酸酯单体的聚合物：其中R 1表示氢（H），1-20个碳的直链或支链烷基，或半或全氟 1〜20个碳原子的直链或支链烷基; 并且其中R 2表示未取代的脂族基团或具有连接在取代的脂族基团的每个碳上的零个或一个三氟甲基（CF 3）基团的取代的脂族基团，或取代或未取代的芳族基团; 并且其中R 3表示氢（H），甲基（CH 3），三氟甲基（CF 3），二氟甲基（CHF 2），氟甲基（CH 2 F）或半或全氟化脂族链; 并且其中R 4表示三氟甲基（CF 3），二氟甲基（CHF 2），氟甲基（CH 2 F）或半或全氟取代或未取代的脂族基团。 本文还提供了使用光致抗蚀剂组合物图案化衬底的方法。

    Low blur molecular resist
    19.
    发明授权
    Low blur molecular resist 失效
    低模糊分子抗蚀剂

    公开(公告)号：US07622240B2

    公开(公告)日：2009-11-24

    申请号：US11068339

    申请日：2005-02-28

    申请人： Ratnam Sooriyakumaran ,  Hoa D. Truong

    发明人： Ratnam Sooriyakumaran ,  Hoa D. Truong

    IPC分类号： G03F7/039 ,  G03F7/004 ,  G03F7/20 ,  G03F7/30 ,  G03F7/36

    CPC分类号： G03F7/0045 ,  G03F7/0392 ,  Y10S430/106

    摘要： A molecular resist composition and method of use is disclosed wherein the composition includes no silicon containing material, no polymeric material, and a substituted oligosaccharide, wherein the substituted oligosaccharide is substituted with at least one acid-cleavable —OR group, wherein the substituted oligosaccharide has 2 to 10 monosaccharides, wherein the molecular resist may be initially insoluble in developer, which may be an aqueous alkaline solution or developer consisting essentially of water. In some embodiments, the molecular resist may become soluble in the developer consisting essentially of water upon exposure to radiation having a wavelength of 193 nm or less and a post-exposure bake temperature from about room temperature to about 110° C. The resist material of the present invention may be used to print feature sizes wherein developed images may have a line/spacing not greater than than 120 nm when the developer consists essentially of water or an aqueous alkaline solution.

    摘要翻译： 公开了一种分子抗蚀剂组合物和使用方法，其中所述组合物不包含含硅材料，不含聚合物材料和取代的寡糖，其中所述取代的寡糖被至少一个可酸切割的-OR基团取代，其中所述取代的寡糖具有 2至10个单糖，其中分子抗蚀剂可以最初不溶于显影剂，其可以是基本上由水组成的碱性水溶液或显影剂。 在一些实施方案中，当暴露于波长为193nm或更小的辐射和暴露后烘烤温度为约室温至约110℃时，分子抗蚀剂可变得可溶于主要由水组成的显影剂中。抗蚀剂材料 本发明可以用于打印特征尺寸，其中当显影剂基本上由水或碱性水溶液组成时，显影图像可以具有不大于120nm的线/间距。