公开(公告)号：US20130264630A1

公开(公告)日：2013-10-10

申请号：US13785810

申请日：2013-03-05

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jun Soo Kim ,  Dong Jin Lee

IPC: H01L29/792

CPC classification number: H01L29/7926 ,  H01L27/0886 ,  H01L27/10861 ,  H01L27/10876 ,  H01L28/91 ,  H01L29/66833 ,  H01L29/7855 ,  H01L29/792

Abstract: Semiconductor devices have transistors capable of adjusting threshold voltages through a body bias effect. The semiconductor devices include transistors having a front gate on a substrate, a back gate between adjacent transistors, and a carrier storage layer configured to surround the back gate and to trap a carrier. A threshold voltage of a transistor may be changed in response to voltage applied to the back gate. Related fabrication methods are also described.

Abstract translation: 半导体器件具有能够通过体偏置效应来调节阈值电压的晶体管。 半导体器件包括在衬底上具有前栅极的晶体管，相邻晶体管之间的背栅极和被配置为围绕背栅极并捕获载流子的载流子存储层。 晶体管的阈值电压可以响应于施加到背栅的电压而改变。 还描述了相关的制造方法。