公开(公告)号：US20210327834A1

公开(公告)日：2021-10-21

申请号：US17359872

申请日：2021-06-28

Applicant: STMicroelectronics (Crolles 2) SAS

Inventor： Didier DUTARTRE

IPC: H01L23/66 ,  H01L21/762 ,  H01L29/06

Abstract: An integrated circuit includes a substrate having at least one first domain and at least one second domain that is different from the at least one first domain. A trap-rich region is provided in the substrate at the locations of the at least one second domain only. Locations of the at least one first domain do not include the trap-rich region.

公开(公告)号：US20210233811A1

公开(公告)日：2021-07-29

申请号：US17228164

申请日：2021-04-12

Applicant: STMicroelectronics (Crolles 2) SAS

Inventor： Didier DUTARTRE ,  Jean-Pierre CARRERE ,  Jean-Luc HUGUENIN ,  Clement PRIBAT ,  Sarah KUSTER

IPC: H01L21/768 ,  H01L29/06 ,  H01L27/12 ,  H01L21/8234 ,  H01L21/84 ,  H01L21/762 ,  H01L21/74

Abstract: A silicon on insulator substrate includes a semiconductor bulk handle wafer, an insulating layer on said semiconductor bulk handle wafer and a semiconductor film on said insulating layer. An opening extends completely through the semiconductor film and insulating layer to expose a surface of the semiconductor bulk handle wafer. Epitaxial material fills the opening and extends on said semiconductor film, with the epitaxial material and semiconductor film forming a thick semiconductor film. A trench isolation surrounds a region of the thick semiconductor film to define an electrical contact made to the semiconductor bulk handle wafer through the opening.

公开(公告)号：US20210151616A1

公开(公告)日：2021-05-20

申请号：US17097661

申请日：2020-11-13

Applicant: STMicroelectronics (Crolles 2) SAS

Inventor： Didier DUTARTRE

IPC: H01L31/0312 ,  H01L31/107

Abstract: An integrated optical sensor includes a photon-detection module of a single-photon avalanche photodiode type. The detection module includes a semiconductive active zone in a substrate. The semiconductive active zone includes a region that contains germanium with a percentage between 3% and 10%. This percentage range is advantageous because it makes it possible to obtain a material firstly containing germanium (which in particular increases the efficiency of the sensor in the infrared or near infrared domain) and secondly having no or very few dislocations(which facilitates the implementation of a functional sensor in integrated form).

公开(公告)号：US20160118431A1

公开(公告)日：2016-04-28

申请号：US14840164

申请日：2015-08-31

Applicant: STMicroelectronics SA

Inventor： Didier DUTARTRE

IPC: H01L27/146

CPC classification number: H01L27/14629 ,  H01L21/7624 ,  H01L21/76264 ,  H01L27/1203 ,  H01L27/1462 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/14643 ,  H01L27/14685 ,  H01L27/14689

Abstract: A front-side image sensor may include a substrate in a semiconductor material and an active layer in the semiconductor material. The front side image sensor may also include an array of photodiodes formed in the active layer and an insulating layer between the substrate and the active layer.

Abstract translation: 前侧图像传感器可以包括半导体材料中的衬底和半导体材料中的有源层。 前侧图像传感器还可以包括在有源层中形成的光电二极管的阵列以及衬底和有源层之间的绝缘层。