公开(公告)号：US07602027B2

公开(公告)日：2009-10-13

申请号：US11618363

申请日：2006-12-29

申请人： Peter A. Burke ,  Sallie Hose ,  Sudhama C. Shastri

发明人： Peter A. Burke ,  Sallie Hose ,  Sudhama C. Shastri

IPC分类号： H01L27/13

CPC分类号： H01L23/5223 ,  H01L21/76801 ,  H01L21/76807 ,  H01L21/76846 ,  H01L23/5227 ,  H01L23/5228 ,  H01L23/53238 ,  H01L28/20 ,  H01L28/40 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor component that includes an integrated passive device and method for manufacturing the semiconductor component. Vertically integrated passive devices are manufactured above a substrate. In accordance with one embodiment, a resistor is manufactured in a first level above a substrate, a capacitor is manufactured in a second level that is vertically above the first level, and a copper inductor is manufactured in a third level that is vertically above the second level. The capacitor has aluminum plates. In accordance with another embodiment, a resistor is manufactured in a first level above a substrate, a copper inductor is manufactured in a second level that is vertically above the first level, and a capacitor is manufactured in a third level that is vertically above the second level. The capacitor may have aluminum plates or a portion of the copper inductor may serve as one of its plates.