Organic light emitting diode display

    公开(公告)号:US11264591B2

    公开(公告)日:2022-03-01

    申请号:US16417386

    申请日:2019-05-20

    Abstract: A light emitting diode display includes: a substrate; a light emitting element on the substrate; and a capping layer on the organic light emitting element and including a plurality of refractive layers each including a low refraction layer and a high refraction layer, wherein the high refraction layer includes a first inorganic material having a refractive index which is equal to or greater than about 1.7 and equal to or less than about 6.0, wherein the low refraction layer includes a second inorganic material having a refractive index which is equal to or greater than about 1.0 and equal to or less than about 1.7, and wherein the second inorganic material comprises at least one selected from LiF, AlF3, NaF, KF, RbF, CaF2, SrF2, and YbF2.

    Organic light emitting diode display

    公开(公告)号:US11177461B2

    公开(公告)日:2021-11-16

    申请号:US16427978

    申请日:2019-05-31

    Abstract: An organic light emitting diode display including: a substrate; an organic light emitting diode on the substrate; a capping layer on the organic light emitting diode and including a high refractive layer including an inorganic material having a refractive index that is equal to or greater than about 1.7 and equal to or less than about 6.0; and a thin film encapsulation layer covering the capping layer and the organic light emitting diode, the inorganic material including at least one selected from the group consisting of CuI, thallium iodide (TlI), BaS, Cu2O, CuO, BiI, WO3, TiO2, AgI, CdI2, HgI2, SnI2, PbI2, BiI3, ZnI2, MoO3, Ag2O, CdO, CoO, Pr2O3, SnS, PbS, CdS, CaS, ZnS, ZnTe, PbTe, CdTe, SnSe, PbSe, CdSe, AlAs, GaAs, InAs, GaP, InP, AlP, AlSb, GaSb, and InSb.

    ORGANIC LIGHT EMITTING DIODE DISPLAY
    15.
    发明申请
    ORGANIC LIGHT EMITTING DIODE DISPLAY 审中-公开
    有机发光二极管显示

    公开(公告)号:US20160329521A1

    公开(公告)日:2016-11-10

    申请号:US14985285

    申请日:2015-12-30

    CPC classification number: H01L51/5253 H01L27/3244 H01L51/5275

    Abstract: An organic light emitting diode display includes: a substrate; an organic light emitting element on the substrate; and a capping layer on the organic light emitting element and including a high refraction layer formed of an inorganic material having a refractive index which is equal to or greater than about 1.7 and equal to or less than about 6.0, wherein the inorganic material includes at least one selected from CuI, thallium iodide (TlI), AgI, CdI2, HgI2, SnI2, PbI2, BiI3, ZnI2, MnI2, FeI2, CoI2, NiI2, aluminium iodide (AlI3), thorium(IV) iodide (ThI4), uranium triiodide (UI3), MgS, MgSe, MgTe, CaS, CaSe, CaTe, SrS, SrSe, SrTe, BaS, BaSe, BaTe, SnS, PbS, CdS, CaS, ZnS, ZnTe, PbTe, CdTe, SnSe, PbSe, CdSe, CuO, Cu2O, WO3, MoO3, SnO2, Nb2O5, Ag2O, CdO, CoO, Pr2O3, Bi2O3, Fe2O3, AlAs, GaAs, InAs, GaP, InP, AlP, AlSb, GaSb, and InSb.

    Abstract translation: 有机发光二极管显示器包括:基板; 基板上的有机发光元件; 和有机发光元件上的覆盖层,并且包括由折射率等于或大于约1.7且等于或小于约6.0的无机材料形成的高折射层,其中所述无机材料至少包括 选自CuI,碘化铊(TlI),AgI,CdI2,HgI2,SnI2,PbI2,BiI3,ZnI2,MnI2,FeI2,CoI2,NiI2,碘化铝(AlI3),碘化钍(IV)(Th14),三碘化铀 (ⅲ),MgS,MgSe,MgTe,CaS,CaSe,CaTe,SrS,SrSe,SrTe,BaS,BaSe,BaTe,SnS,PbS,CdS,CaS,ZnS,ZnTe,PbTe,CdTe,SnSe,PbSe,CdSe, CuO,Cu2O,WO3,MoO3,SnO2,Nb2O5,Ag2O,CdO,CoO,Pr2O3,Bi2O3,Fe2O3,AlAs,GaAs,InAs,GaP,InP,AlP,AlSb,GaSb和InSb。

    Organic light emitting diode display

    公开(公告)号:US10403851B2

    公开(公告)日:2019-09-03

    申请号:US14985285

    申请日:2015-12-30

    Abstract: An organic light emitting diode display includes: a substrate; an organic light emitting element on the substrate; and a capping layer on the organic light emitting element and including a high refraction layer formed of an inorganic material having a refractive index which is equal to or greater than about 1.7 and equal to or less than about 6.0, wherein the inorganic material includes at least one selected from CuI, thallium iodide (TlI), AgI, CdI2, HgI2, SnI2, PbI2, BiI3, ZnI2, MnI2, FeI2, CoI2, NiI2, aluminum iodide (AlI3), thorium (IV) iodide (ThI4), uranium triiodide (UI3), MgS, MgSe, MgTe, CaS, CaSe, CaTe, SrS, SrSe, SrTe, BaS, BaSe, BaTe, SnS, PbS, CdS, CaS, ZnS, ZnTe, PbTe, CdTe, SnSe, PbSe, CdSe, CuO, Cu2O, WO3, MoO3, SnO2, Nb2O5, Ag2O, CdO, CoO, Pr2O3, Bi2O3, Fe2O3, AlAs, GaAs, InAs, GaP, InP, AlP, AlSb, GaSb, and InSb.

Patent Agency Ranking